Practical Low Power Mosfet Transistors 20V 60V For Wireless Charging

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
EAS Capability High EAS Capability SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Power Consumption Low Power Loss Resistance Low Rds(ON)
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Structure Process Trench/SGT
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Practical Low Power Mosfet Transistors

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Low Power Mosfet Transistors 20V

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Wireless Charging Low Power Mosfets

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

High Frequency Switch Trench Low Voltage MOSFET with and Reliable Structure Process SGT/Trench

Product Description:

Low Voltage MOSFET

Low Voltage MOSFET is an advanced semiconductor device that offers breakthrough FOM Optimization for low power loss applications. It is designed for motor driver, 5G base station, energy storage, high-frequency switch and synchronous rectification. This MOSFET has a low gate voltage and low threshold voltage, which allows it to operate with low power losses. It also has a low Rds(ON) resistance and offers excellent switching performance with low gate charge. 

The unique SGT process of the Low Voltage MOSFET provides superior performance in terms of FOM optimization, covering more application scenarios. It is ideal for applications requiring low power loss, low gate voltage and low threshold voltage, such as motor driver, 5G base station, energy storage, high-frequency switch, and synchronous rectification.

 

Technical Parameters:

Structure process Trench/SGT
Trench process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Efficiency High Efficiency And Reliable
SGT process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Product name Low Voltage MOSFET
SGT process Advantages Breakthrough FOM Optimization, Covering More Application.
resistance Low Rds(ON)
EAS capability High EAS Capability
Power consumption Low Power Loss
 

Applications:

Low Voltage MOSFET

REASUNOS Low Voltage MOSFET is a type of field effect transistor (FET) that operates at low gate voltage. It is ideal for applications that require low power loss and high EAS capability. With low Rds(ON), it is suitable for wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification.

It has a competitive price, with packaging that is dustproof, waterproof and anti-static. The delivery time is 2-30 days, depending on the total quantity, and payment terms are 100% T/T in Advance (EXW). The monthly supply capacity is 5KK.

 

Support and Services:

Low Voltage MOSFET Technical Support & Service

We provide technical support and services for Low Voltage MOSFET products. Our trained technicians can answer questions related to installation, operation, and maintenance of these products.

If you experience any problems with Low Voltage MOSFET products, our experienced technicians are available to provide troubleshooting services. We also offer after-sales support, including product repairs and replacements.

For more information on Low Voltage MOSFET technical support and services, please contact us at (xxx) xxx-xxxx or send us an email at support@example.com.

 

Packing and Shipping:

Packaging and Shipping for Low Voltage MOSFET:

The Low Voltage MOSFET device will be securely packaged in an antistatic bag. The package will be placed inside a plastic container, and then placed inside a cardboard box. The box will be securely sealed and labeled with the proper shipping information.

The package will be shipped via a trusted courier. The courier will provide tracking information once the package is shipped.

 

FAQ:

Q1: What is Low Voltage MOSFET?
A1: Low voltage MOSFET is a type of power field-effect transistor (FET) that can switch or amplify an electrical signal at low power supply voltage.
Q2: What is the brand name of this product?
A2: The brand name of this product is REASUNOS.
Q3: Where is this product made?
A3: This product is made in Guangdong, China.
Q4: What is the price of this product?
A4: The price of this product will depend on the quantity of the order. Please contact us for more information.
Q5: How is this product packaged?
A5: This product is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.