All Products
Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet
Advantages: | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
---|---|
Application: | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
Power: | High Power |
Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors
Device Type: | MOSFET |
---|---|
Material: | Silicon Carbide |
Type: | N |
1200V 1500V SiC Power Semiconductor , Multi Function Silicon Semi Conductor
Voltage: | High Voltage |
---|---|
Rds(ON): | Low Rds(ON) |
Advantages: | Stable Process And Reliable Quality |
Power Supply Diode Schottky Barrier Stable , MBR2045CT SiC Schottky Rectifier
Application: | Display Screen Power Supply, Laptop Power Supply, Switching Power Supply, Etc |
---|---|
Product Name: | Schottky Barrier Diodes |
Forward Voltage: | Low VF |
Durable Power Semi Conductor , 1700V Silicon Carbide SiC Power Semiconductors
Junction Capacitance: | Low Junction Capacitance |
---|---|
Heat Dissipation: | Great Heat Dissipation |
Rds(ON): | Low Rds(ON) |
Adaptors High Voltage SiC Mosfet N Type Stable Multi Function
Type: | N |
---|---|
Advantages: | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Voltage Rating: | High Voltage/Ultra-high Voltage |
Practical Electronic Schottky Rectifier Diode , MBRF2045CT SiC Schottky Barrier Diode
Leakage: | Low Leakage |
---|---|
Product Name: | Schottky Barrier Diodes |
Characteristics: | Low Forward Low Voltage Drop, Low Loss, Extremely Short Reverse Recovery Time |
Stable Converter Silicon Carbide Transistor , UPS Power Supply SiC FETs
Power: | High Power |
---|---|
Resistance: | Low On Resistance |
Application: | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
Power Consumption: | Low Power Loss |
---|---|
Efficiency: | High Efficiency And Reliable |
Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
---|---|
Product Name: | Low Voltage MOSFET |
EAS Capability: | High EAS Capability |