Multiscene 20V Mosfet Low Voltage , 5G Base Station Low Power Transistor

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Resistance Low Rds(ON) Structure Process Trench/SGT
Product Name Low Voltage MOSFET Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Power Consumption Low Power Loss Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
EAS Capability High EAS Capability SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
High Light

Multiscene Mosfet Low Voltage

,

20V Mosfet Low Voltage

,

Base Station Low Power Transistor

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss

Product Description:

Low Voltage MOSFET is a kind of power semiconductor device featuring low power loss and high EAS capability. It is usually used in low voltage applications and the trench process advantages enable it to have smaller RSP and freely combined and utilized both series and parallel configurations. The SGT process advantages further provide breakthrough FOM optimization and covering more application. With its low voltage fet characteristics, Low Voltage MOSFET is an ideal choice for efficient and reliable power control.

 

Technical Parameters:

Product name Low Voltage MOSFET
Structure process Trench/SGT
EAS capability High EAS Capability
SGT process Advantages Breakthrough FOM Optimization, Covering More Application.
SGT process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Power consumption Low Power Loss
Efficiency High Efficiency And Reliable
Trench process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
resistance Low Rds(ON)
 

Applications:

Low Voltage MOSFET, a type of low voltage transistor,is a reliable and high efficient semiconductor device with low gate voltage, low on-resistance and both series and parallel configurations. It is widely used in various applications such as wireless charging, fast charging, motor driver, DC/DC converter, 5G base station, energy storage, high-frequency switch and synchronous rectification. The REASUNOS brand, made in Guangdong, China, is available at an agreed upon price, with dustproof, waterproof, and anti-static tubular packaging and can be delivered within 2-30 days, depending on the total quantity. Payment terms are 100% T/T in advance (EXW) and it has a supply ability of 5KK/month.
 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We provide comprehensive technical support and service for our Low Voltage MOSFET products. Our team of experts can help you with every step of your project, from design and prototyping to production and post-production. We have a wide range of resources, including tutorials, online documentation, webinars, and more. We also provide on-site support for our customers if needed.

Our technical support and service team is available 24/7 to answer any questions you may have. We also provide ongoing maintenance and upgrades to ensure our products are up-to-date. We are committed to providing our customers with the highest quality products and services.

If you have any questions or need assistance, please contact us at any time. We look forward to hearing from you.

 

Packing and Shipping:

The Low Voltage MOSFET product should be packaged in an electrostatic discharge (ESD) bag and shipped in an anti-static box to protect against static electricity.

 

FAQ:

Q&A About Low Voltage MOSFET
  • Q: What is the brand name of this Low Voltage MOSFET?
    A: The brand name of this Low Voltage MOSFET is REASUNOS.
  • Q: Where is the product origin?
    A: The product origin is Guangdong, CN.
  • Q: What is the price of this Low Voltage MOSFET?
    A: The price of this Low Voltage MOSFET will be confirmed based on the product.
  • Q: How will this Low Voltage MOSFET be packaged?
    A: This Low Voltage MOSFET will be packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
  • Q: How long does it take for this Low Voltage MOSFET to be delivered?
    A: The delivery time of this Low Voltage MOSFET depends on the total quantity and usually takes 2-30 days.
  • Q: What payment terms do you offer?
    A: We offer 100% T/T in Advance(EXW) as payment terms.
  • Q: What is the supply ability of this Low Voltage MOSFET?
    A: We have a supply ability of 5KK/month for this Low Voltage MOSFET.