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Keywords [ base station low voltage mosfet ] match 41 Products.
Industrial Low Voltage MOSFET Multifunctional For 5G Base Station
| Power Consumption: | Low Power Loss |
|---|---|
| EAS Capability: | High EAS Capability |
| Resistance: | Low Rds(ON) |
Multiscene 20V Mosfet Low Voltage , 5G Base Station Low Power Transistor
| Resistance: | Low Rds(ON) |
|---|---|
| Structure Process: | Trench/SGT |
| Product Name: | Low Voltage MOSFET |
High Efficiency Low Power Loss Low Voltage MOSFET Trench / SGT Process
| Power Consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Durable SGT Low Voltage MOSFET Multi Function With Smaller RSP
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Resistance: | Low Rds(ON) |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
P Channel Low Voltage MOSFET Durable For Wireless Charging Low
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
| Product Name: | Low Voltage MOSFET |
Fast Charging Low Voltage MOSFET N Channel Multipurpose For Motor Driver
| Power Consumption: | Low Power Loss |
|---|---|
| EAS Capability: | High EAS Capability |
| Structure Process: | Trench/SGT |
HF Switch Low Voltage MOSFET Practical For Synchronous Rectification
| Power Consumption: | Low Power Loss |
|---|---|
| Structure Process: | Trench/SGT |
| Efficiency: | High Efficiency And Reliable |
Trench SGT Low Voltage MOSFET Practical Low On Resistance 30V 40V
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
|---|---|
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
N Channel Low Voltage MOSFET Stable High EAS For DC DC Converter
| Power Consumption: | Low Power Loss |
|---|---|
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| Product Name: | Low Voltage MOSFET |
High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
| Resistance: | Low Rds(ON) |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |