Durable SGT Low Voltage MOSFET Multi Function With Smaller RSP
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xSGT Process Application | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. | Resistance | Low Rds(ON) |
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Trench Process Application | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. | Structure Process | Trench/SGT |
Product Name | Low Voltage MOSFET | EAS Capability | High EAS Capability |
Power Consumption | Low Power Loss | Trench Process Advantages | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Highlight | Durable Low Voltage MOSFET,Low Voltage MOSFET Multi Function,Smaller RSP SGT MOSFET |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RS2301E | P | -2.3 | -20 | 70 | 110 | SOT-23 | 3000 | |
2 | RS3415E | P | -4 | -20 | 33 | 50 | SOT-23 | 3000 | |
3 | RS2302E | N | 2.1 | 20 | 32 | 45 | SOT-23 | 3000 | |
4 | RS2300E | N | 4.5 | 20 | 21 | 32 | SOT-23 | 3000 | |
5 | RS2N7002E | N | 0.34 | 60 | 1300 | 5000 | SOT-23 | 3000 | |
6 | RS20N90D | N | 90 | 20 | 3.7 | 5 | TO-252 | 2500 | |
7 | RS3401E | P | -4.2 | -30 | 50 | 65 | SOT-23 | 3000 | |
8 | RS4435 | P | -10 | -30 | 15 | 20 | SOP-8 | 4000 | |
9 | RS3400E | N | 5.8 | 30 | 27 | 35 | SOT-23 | 3000 | |
10 | RS30N30K | N | 30 | 30 | 5.8 | 9 | DFN3*3 | 5000 | |
11 | RS30N50K | N | 50 | 30 | 3.8 | 5.5 | DFN3*3 | 5000 | |
12 | RS30N60D | N | 60 | 30 | 6.2 | 7.5 | TO-252 | 2500 | |
13 | RS30N86D | N | 86 | 30 | 4.7 | 5.5 | TO-252 | 2500 | |
14 | RS30N120G | N | 120 | 30 | 3 | 4 | DFN5*6 | 5000 | |
15 | RS30N150D | N | 150 | 30 | 3 | 4 | TO-252 | 2500 | |
16 | RS30N150T | N | 150 | 30 | 3 | 4 | TO-220 | 1000 | |
17 | RS40N100G | N | 100 | 40 | 2.8 | 3.5 | DFN5*6 | 5000 | |
18 | RS40N120D | N | 120 | 40 | 2.8 | 3.5 | TO-252 | 2500 | |
19 | RS40N120T | N | 120 | 40 | 2.8 | 3.5 | TO-220 | 1000 | |
20 | RS150N105T | N | 105 | 150 | 9.8 | 11 | TO-220 | 1000 | |
21 | RS76N20T | N | 76 | 200 | 17 | 20 | TO-220 | 1000 | |
22 | RS2310E | N | 3 | 60 | 70 | 105 | SOT-23 | 3000 | |
23 | RS60N30D | N | 30 | 60 | 22 | 35 | TO-252 | 2500 | |
24 | RS60N50D | N | 50 | 60 | 14 | 22 | TO-252 | 2500 | |
25 | RS60N50T | N | 50 | 60 | 14 | 22 | TO-220 | 1000 | |
26 | RS80N25W | N | 80 | 250 | 30 | 35 | TO-247 | 600 | |
27 | RS630D | N | 9 | 200 | 250 | 300 | TO-252 | 2500 | |
28 | RS630T | N | 9 | 200 | 250 | 300 | TO-220 | 1000 | |
29 | RS640D | N | 18 | 200 | 120 | 150 | TO-252 | 2500 | |
30 | RS640T | N | 18 | 200 | 120 | 150 | TO-220 | 1000 | |
31 | RS40N130G | N | 130 | 40 | 1.45 | 1.75 | DFN5*6 | 5000 | |
32 | RS40N180T | N | 180 | 40 | 1.6 | 2 | TO-220 | 1000 | |
33 | RS60N130G | N | 130 | 60 | 2.1 | 2.5 | DFN5*6 | 5000 | |
34 | RS60N200T | N | 200 | 60 | 2.5 | 3.2 | TO-220 | 1000 | |
35 | RS85N140T | N | 140 | 85 | 4.5 | 5.3 | TO-220 | 1000 | |
36 | RS85N140S | N | 140 | 85 | 4.5 | 5.3 | TO-263 | 800 | |
37 | RS85N150T | N | 150 | 85 | 2.8 | 3.6 | TO-220 | 1000 | |
38 | RS85N150S | N | 150 | 85 | 2.7 | 3.4 | TO-263 | 800 | |
39 | RS100N78HT | N | 78 | 100 | 8.2 | 9.5 | TO-220 | 1000 | |
40 | RS100N78T | N | 78 | 100 | 8.2 | 9.5 | TO-220 | 1000 | |
41 | RS100N100T | N | 100 | 100 | 7 | 8.5 | TO-220 | 1000 | |
42 | RS100N135T | N | 135 | 100 | 3.7 | 4.2 | TO-220 | 1000 | |
43 | RS100N135HT | N | 135 | 100 | 3.7 | 4.2 | TO-220 | 1000 | |
44 | RS100N135HS | N | 135 | 100 | 4.2 | 5 | TO-263 | 800 | |
45 | RS100N180T | N | 180 | 100 | 3 | 3.8 | TO-220 | 1000 | |
46 | RS100N180S | N | 180 | 100 | 2.9 | 3.6 | TO-263 | 800 | |
47 | RS100N190T | N | 190 | 100 | 2.3 | 3 | TO-220 | 1000 | |
48 | RS100N190S | N | 190 | 100 | 2.2 | 2.8 | TO-263 | 800 | |
49 | RS110N200T | N | 200 | 110 | 3.4 | 4 | TO-220 | 1000 | |
50 | RS110N200S | N | 200 | 110 | 3.4 | 4 | TO-263 | 800 | |
51 | RS100N210S | N | 200 | 100 | 1.9 | 2.4 | TO-263 | 800 | |
52 | RS100N210T | N | 210 | 100 | 1.9 | 2.4 | TO-220 | 1000 | |
53 | RS100N300I | N | 300 | 100 | 1.7 | 2.2 | TOLL | 2000 | |
54 | RS100N60G | N | 60 | 100 | 7.5 | 8.5 | DFN5*6 | 5000 | |
55 | RS100N60HG | N | 60 | 100 | 7.5 | 8.5 | DFN5*6 | 5000 | |
56 | RS100N85G | N | 85 | 100 | 6 | 7.5 | DFN5*6 | 5000 | |
57 | RS100N85HG | N | 85 | 100 | 6 | 7.5 | DFN5*6 | 5000 | |
58 | RS100N125G | N | 125 | 100 | 4 | 4.6 | DFN5*6 | 5000 | |
59 | RS100N125HG | N | 125 | 100 | 4 | 4.6 | DFN5*6 | 5000 | |
60 | RS100N150HG | N | 150 | 100 | 3.5 | 4.2 | DFN5*6 | 5000 |
Trench Low Voltage MOSFET with Smaller RSP for Synchronous Rectification
Product Description:
Low Voltage MOSFET is a type of low threshold voltage Field Effect Transistor (FET) that provides high EAS capability, high efficiency and reliable power loss. It can be used in a variety of applications, including motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification, wireless charging, fast charging, DC/DC converter, etc. Low Voltage MOSFET features low threshold voltage, allowing for low power consumption and improved performance. With its excellent EAS capability, it can be used in high-frequency switch applications, such as 5G base station, energy storage, motor driver, and synchronous rectification. Additionally, it can provide reliable power loss and low power consumption for wireless charging, fast charging, and DC/DC converter applications.
Technical Parameters:
Product name | Low Voltage MOSFET |
---|---|
Structure process | Trench/SGT |
SGT process Advantages | Breakthrough FOM Optimization, Covering More Application. |
Efficiency | High Efficiency And Reliable |
EAS capability | High EAS Capability |
Trench process Advantages | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
SGT process Application | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Trench process Application | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
resistance | Low Rds(ON) |
Power consumption | Low Power Loss |
Applications:
Low Voltage Field Effect Transistor (MOSFET) from REASUNOS is the ideal choice for low voltage power applications. Providing high efficiency and reliable performance, these low voltage FETs come in both SGT and Trench structure processes, depending on the customer's needs. The SGT process offers breakthrough FOM optimization and covers more applications, while the Trench process offers smaller RSP and allows for freely combined and utilized series and parallel configurations.
REASUNOS' Low Voltage MOSFETs are offered at competitive prices, and are packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons for safe delivery. With a supply capacity of 5KK/month, orders can be fulfilled within 2-30 days depending on the total quantity. Payment terms are 100% T/T in advance (EXW).
Support and Services:
Technical support and service for Low Voltage MOSFETs are available to ensure the optimal performance of our products. Our experts are available to provide technical assistance for any questions or issues related to installation, operation, and maintenance of Low Voltage MOSFETs.
We also provide complimentary services such as product repair, replacement, and updates. Our highly experienced technicians and engineers are always available to assist with any technical problems that may arise.
At Low Voltage MOSFETs, we strive to provide our customers with superior technical support and service. We are dedicated to providing a safe, reliable, and efficient product experience.
Packing and Shipping:
Low Voltage MOSFETs should be packaged and shipped in a way that maximizes their protection against mechanical shock, abrasion, and other environmental hazards. Packaging should be designed to reduce the risk of electrical shock and other hazards. When shipping, Low Voltage MOSFETs should be placed in sealed containers that are designed to protect against vibration and extreme temperatures.
FAQ:
A1: The Brand Name of Low Voltage MOSFET is REASUNOS.
A2: The Place of Origin of Low Voltage MOSFET is Guangdong, CN.
A3: The Price of Low Voltage MOSFET is Confirm price based on product.
A4: The Packaging Details of Low Voltage MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
A5: The Delivery Time of Low Voltage MOSFET is 2-30 days (Depends on Total Quantity).
A6: The Payment Terms of Low Voltage MOSFET is 100% T/T in Advance(EXW).
A7: The Supply Ability of Low Voltage MOSFET is 5KK/month.