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Practical Low Voltage MOSFET Multifunctional N Channel Low Rds

  • Practical Low Voltage MOSFET Multifunctional N Channel Low Rds
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Structure Process Trench/SGT Efficiency High Efficiency And Reliable
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Product Name Low Voltage MOSFET Power Consumption Low Power Loss
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Highlight

Practical Low Voltage MOSFET

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Low Voltage MOSFET Multifunctional

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N Channel Low Rds MOSFET
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON)

Product Description:

Low Voltage MOSFET is a type of field-effect transistor (FET) that works under low voltage. It is widely used in various applications such as motor driver, 5G base station, energy storage, high-frequency switch and synchronous rectification. This Low Voltage MOSFET features low Rds(ON) resistance, high efficiency and reliable performance, as well as high EAS capability. The structure process adopted for this Low Voltage MOSFET is trench/SGT process. With its advanced technology, this Low Voltage MOSFET is able to provide excellent performance in different applications.

 

Technical Parameters:

Product Name Advantages
Low Voltage MOSFET (Trench Process) Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Low Voltage MOSFET (SGT Process) Breakthrough FOM Optimization, Covering More Application.
Power Consumption EAS Capability
Low Power Loss High EAS Capability
Application Efficiency
Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification (Trench Process) High Efficiency And Reliable
Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification (SGT Process) --
Structure Process Resistance
Trench/SGT Low Rds(ON)
 

Applications:

REASUNOS Low Voltage MOSFET is a high-performance trench and SGT process MOSFET with low Rds(ON) and high EAS capability. It is widely used in applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch and synchronous rectification. It is produced in Guangdong, China, and is available to customers at an EXW price with a minimum order quantity of 5KK/month. The product is packaged in dustproof, waterproof and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days depending on the total quantity. Payment terms are 100% T/T in Advance.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We are dedicated to providing comprehensive technical support and service for all our Low Voltage MOSFET products. Our team of experienced engineers and technicians can help you with every stage of the process, from design and selection through to installation and maintenance.

We offer a range of services including:

  • Design and selection assistance
  • Installation and maintenance support
  • Troubleshooting and diagnostics
  • Software and firmware updates
  • Product training and education

Our team is available 24/7 to answer any questions, offer advice and resolve any issues you may have. We are committed to providing the highest level of customer satisfaction.

 

Packing and Shipping:

Packaging and Shipping for Low Voltage MOSFET

For safety and security purposes, Low Voltage MOSFETs will be packaged and shipped in a sturdy cardboard box with bubble wrap inside to protect the components from external damage. The box will be properly sealed and labeled with a warning label that reads “Fragile - Handle with Care”.

The packing will also include a detailed instruction manual for installation and usage purposes. All necessary accessories such as cables, connectors, and other components will be included in the box.

The Low Voltage MOSFETs will be shipped via a reliable shipping company and will be tracked with a unique tracking number. Shipping time will depend on the destination and can take anywhere from 3-7 days.

 

FAQ:

FAQ: Low Voltage MOSFET
Q1: What brand is the low voltage MOSFET?

A1: The low voltage MOSFET is REASUNOS brand.

Q2: Where is the low voltage MOSFET made?

A2: The low voltage MOSFET is made in Guangdong, China.

Q3: What is the price of the low voltage MOSFET?

A3: The price of the low voltage MOSFET is based on the product. Please contact us for more details.

Q4: How is the packaging of the low voltage MOSFET?

A4: The low voltage MOSFET is packed in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: How long for the delivery of the low voltage MOSFET?

A5: The delivery of the low voltage MOSFET is 2-30 days depending on the total quantity.

Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET