Durable Trench Low Voltage Power MOSFET , SGT Ultra Low Threshold Voltage MOSFET

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Efficiency High Efficiency And Reliable
Power Consumption Low Power Loss Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
EAS Capability High EAS Capability Structure Process Trench/SGT
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Resistance Low Rds(ON)
Highlight

Durable Low Voltage Power MOSFET

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Trench Low Voltage Power MOSFET

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SGT Ultra Low Threshold Voltage MOSFET

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage Power MOSFET with Trench/SGT Structure Process and Smaller RSP

Product Description:

Low Voltage MOSFET is a power MOSFET designed to provide low resistance and high efficiency in low voltage applications. It is a combination of Trench and SGT process which gives breakthrough FOM Optimization and covers more application. This product is designed to offer superior performance with its Low Rds(ON) resistance, high efficiency and reliable operation. Its applications include wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch and synchronous rectification. Low Voltage MOSFET is the ideal solution for low voltage power applications.

 

Technical Parameters:

Parameter Low Voltage MOSFET
Resistance Low Rds(ON)
Structure Process Trench/SGT
EAS Capability High EAS Capability
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Efficiency High Efficiency And Reliable
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Power Consumption Low Power Loss
 

Applications:

REASUNOS Low Voltage MOSFETs are the perfect choice for applications where low power loss and low Rds(ON) resistance are critical. These trench low voltage MOSFETs are ideal for use in wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. They provide high EAS capability and extremely low power loss with smaller RSP. With both series and parallel configurations, these low voltage FETs can be freely combined and utilized.

REASUNOS Low Voltage MOSFETs come with a great price, and their packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is usually 2-30 days depending on the total quantity. Payment terms are 100% T/T in Advance (EXW) and the supply ability is up to 5KK/month.

 

Support and Services:

Low Voltage MOSFET Technical Support and Services

We provide technical support and services to ensure that your Low Voltage MOSFET solutions are efficient and reliable.

  • We provide comprehensive technical support for all Low Voltage MOSFET products.
  • We offer product training and troubleshooting services for customers.
  • We provide detailed installation instructions and product documentation.
  • We offer product customization and customization services.
  • We provide technical support for product upgrades and repairs.
  • We offer after-sales service and support.
 

Packing and Shipping:

Low Voltage MOSFET products should be packaged and shipped in accordance with standard industry guidelines. The product should be placed in an ESD-safe bag or box with appropriate cushioning material to protect it from physical damage. The package should be clearly labeled with the Low Voltage MOSFET product's part number and model. Shipping labels should be affixed to the package, including the correct destination address, recipient contact information, and the shipper's contact information. The package should be shipped with a reliable carrier, such as UPS or FedEx, to ensure it is delivered safely and on time.

 

FAQ:

Q: What is Low Voltage MOSFET?
A: Low Voltage MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate at low voltage.
Q: What's the brand name of Low Voltage MOSFET?
A: The brand name of Low Voltage MOSFET is REASUNOS.
Q: Where is Low Voltage MOSFET produced?
A: Low Voltage MOSFET is produced in Guangdong, China.
Q: What's the price of Low Voltage MOSFET?
A: The price of Low Voltage MOSFET should be confirmed based on the product.
Q: How is Low Voltage MOSFET packaged?
A: Low Voltage MOSFET is packed with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.