Small RSP Low Voltage MOSFET Multi Scene N Channel Low Threshold

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
EAS Capability High EAS Capability SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. Structure Process Trench/SGT
Power Consumption Low Power Loss Efficiency High Efficiency And Reliable
Highlight

Small RSP Low Voltage MOSFET

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Low Voltage MOSFET Multi Scene

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N Channel Mosfet Low Threshold Voltage

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Rds(ON) Voltage FET with and Reliable SGT Process for Breakthrough FOM Optimization

Product Description:

Low Voltage MOSFET: High Efficiency and Reliable

Low Voltage MOSFET is a field effect transistor with low voltage working range and high efficiency. With its breakthrough SGT process, it provides superior FOM optimization and covers more applications. Its low power loss and low Rds(ON) offers low resistance to reduce energy waste. It also features the advanced Trench process that reduces RSP significantly. Both series and parallel configurations can be freely combined and utilized.

 

Technical Parameters:

Parameter Description
Product Name Low Voltage MOSFET
Structure Process Trench/SGT
Resistance Low Rds(ON)
Efficiency High Efficiency And Reliable
Power Consumption Low Power Loss
EAS Capability High EAS Capability
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
 

Applications:

Low Voltage MOSFET from REASUNOS is the perfect solution for any low voltage power needs. This MOSFET is from Guangdong, China and offers excellent quality at an unbeatable price. It comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons, ensuring its safe delivery and arrival. Delivery times vary from 2-30 days, depending on the total quantity ordered. Payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month.

This Low Voltage MOSFET has a low Rds(ON) resistance, which ensures high efficiency and reliability. It also boasts a unique trench/SGT process which provides a smaller RSP. Both series and parallel configurations can be freely combined and utilized for maximum effect.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

Our team is dedicated to providing customers with the best technical support on Low Voltage MOSFET products. We are available to answer any questions or concerns you may have about the products. Our team is also available to provide troubleshooting and repair services should the need arise.

We strive to provide the highest quality of service and support. If you have any questions or concerns about Low Voltage MOSFET products, please don’t hesitate to contact us. We look forward to hearing from you.

 

Packing and Shipping:

Packaging and Shipping for Low Voltage MOSFET:

Low Voltage MOSFET is packaged in an ESD-safe bag and placed in an antistatic box to ensure safe delivery. The box is labeled with the product name, model number, and quantity. All packages will be shipped via a reliable courier, such as FedEx, UPS, or DHL. Shipping costs will vary depending on destination and weight.

 

FAQ:

Q: What is Low Voltage MOSFET?
A: Low Voltage MOSFET are metal-oxide-semiconductor field-effect transistors (MOSFETs) that are designed to operate at low voltage levels.
Q: What is the brand name of this product?
A: REASUNOS is the brand name of this Low Voltage MOSFET product.
Q: Where is the origin of this product?
A: This Low Voltage MOSFET product is originated from Guangdong, CN.
Q: What is the packaging detail?
A: This product is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the delivery time?
A: The delivery time is 2-30 days, which depends on the total quantity.