60V 150V Low Voltage High Current Mosfet Durable Multi Function

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Resistance Low Rds(ON) Efficiency High Efficiency And Reliable
EAS Capability High EAS Capability SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
Power Consumption Low Power Loss Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Structure Process Trench/SGT Product Name Low Voltage MOSFET
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150V Low Voltage High Current Mosfet

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Low Voltage High Current Mosfet Durable

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Multi Function Mosfet Low Power

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

SGT Low Voltage MOSFET Trench/SGT Process Covering More Application

Product Description:

Low Voltage MOSFET

Low Voltage MOSFET is a low threshold voltage MOSFET with a trench process. It offers low power loss, high EAS capability and excellent performance for wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification.

The Low Voltage MOSFET adopts a trench structure process to reduce the power losses. It is designed with low threshold voltage and has a wide range of applications. With its high EAS capability, the Low Voltage MOSFET is suitable for various applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification.

The Low Voltage MOSFET is an ideal choice for those who need low power loss, high EAS capability, and excellent performance. It is the perfect choice for any of your low voltage projects and applications.

 

Technical Parameters:

Properties Trench Process SGT Process
Product Name Low Voltage MOSFET Low Voltage MOSFET
Structure Process Trench SGT
Low Threshold Voltage Yes Yes
Breakthrough FOM Optimization No Yes
High EAS Capability Yes Yes
Smaller RSP Yes No
Freely Combined And Utilized Yes No
Low Power Loss Yes Yes
High Efficiency And Reliable Yes Yes
Low Rds(ON) Yes Yes
Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification
 

Applications:

REASUNOS Low Voltage MOSFET is the ideal choice for applications requiring high efficiency and reliable performance. With a low gate voltage, this low voltage field effect transistor (FET) device is suitable for use in various applications such as portable electronic devices, battery powered systems, and low power loss systems. It features a high EAS capability and SGT (Trench/SGT) structure process, providing excellent performance and reliability. It has a low power consumption, making it an ideal choice for applications that require energy efficiency.

REASUNOS Low Voltage MOSFET is available in different packages such as dustproof, waterproof, and anti-static tubular packaging. The packaging is placed in a cardboard box and shipped in cartons. The delivery time for this product varies from 2-30 days depending on the total quantity. The price of this product is also based on the product itself. Payment terms include 100% T/T in Advance (EXW).

REASUNOS Low Voltage MOSFET features a low gate voltage and high EAS capability, excellent performance and reliability, low power consumption, and high efficiency. It is the ideal choice for applications that require low voltage FET, low gate voltage MOSFET, SGT Low Voltage MOSFET, and high efficiency solutions. It has a monthly supply capacity of 5KK and is available at a competitive price.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We provide technical support and services for Low Voltage MOSFET, including:

  • Design assistance
  • Custom design and fabrication
  • Troubleshooting and repair
  • Device selection support
  • On-site installation and maintenance
  • Product documentation and user guides

If you have any questions or need more information, please don't hesitate to contact us.

 

Packing and Shipping:

Low Voltage MOSFET products are packaged and shipped in a secure and reliable manner. They are typically shipped in an antistatic bag, which is placed inside a box with bubble wrap and other protective materials. The box is then sealed with tape for extra protection. The box is then placed in a larger box with additional padding to ensure the product is not damaged during shipping.

 

FAQ:

Q1: What is REASUNOS Low Voltage MOSFET?
A1: REASUNOS Low Voltage MOSFET is a type of power semiconductor device that is used to control the flow of electrical current in an electrical circuit.
Q2: Where is the Place of Origin for REASUNOS Low Voltage MOSFET?
A2: The Place of Origin for REASUNOS Low Voltage MOSFET is Guangdong, China.
Q3: What is the Price of REASUNOS Low Voltage MOSFET?
A3: The price of REASUNOS Low Voltage MOSFET will depend on the product. Please contact us for a confirmed price.
Q4: How is REASUNOS Low Voltage MOSFET Packaged?
A4: REASUNOS Low Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: What is the Delivery Time for REASUNOS Low Voltage MOSFET?
A5: The Delivery Time for REASUNOS Low Voltage MOSFET is 2-30 days, depending on the total quantity.