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N Channel Low Voltage MOSFET Stable High EAS For DC DC Converter

  • N Channel Low Voltage MOSFET Stable High EAS For DC DC Converter
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Power Consumption Low Power Loss Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Product Name Low Voltage MOSFET EAS Capability High EAS Capability
Structure Process Trench/SGT SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Resistance Low Rds(ON)
Highlight

N Channel Low Voltage MOSFET

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Low Voltage MOSFET Stable

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Converter Low Vgs N Channel Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage Field Effect Transistor with Smaller RSP for DC/DC Converter

Product Description:

Low Voltage MOSFET is an advanced type of low threshold voltage Field Effect Transistor (FET) which is suitable for a wide range of applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. It is a revolutionary product which features low power loss and offers breakthrough FOM optimization, covering more applications. It is produced using trench process and SGT (Self-Gated Technology) process, which makes it possible to combine and utilize both series and parallel configurations freely. Its low gate voltage and low power loss make it an ideal choice for motor driver, 5G base station, energy storage, high-frequency switch, and synchronous rectification.

 

Technical Parameters:

Process Advantages Application
Trench Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
SGT Breakthrough FOM Optimization, Covering More Application. Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Features Description
Efficiency High Efficiency And Reliable
Power consumption Low Power Loss
EAS capability High EAS Capability
resistance Low Rds(ON)
 

Applications:

REASUNOS Low Voltage MOSFET is a reliable and cost-effective solution for all your low voltage needs. With its low power loss and low Rds(ON) resistance, it is perfect for applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. It is available in two processes, Trench and SGT, which allows for more efficient use of the device. The Trench process is suitable for applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. Meanwhile, the SGT process is best suited for motor driver, 5G base station, energy storage, high-frequency switch, and synchronous rectification. Its dustproof, waterproof, and anti-static tubular packaging ensures that all REASUNOS Low Voltage MOSFETs arrive safely, and with a 2-30 days delivery time (depending on total quantity) and a 100% T/T in advance (EXW) payment terms, you can be sure that your order will be fulfilled without delay. With an excellent supply ability of 5KK/month, you have nothing to worry about.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We provide technical support and service for Low Voltage MOSFETs. Our technical team offers comprehensive support for Low Voltage MOSFETs from the design stage to the production stage. We provide professional advice on the selection, design, and optimization of Low Voltage MOSFETs.

We offer a wide range of services, including:

  • Design consultancy
  • Simulation and modeling services
  • Testing and verification
  • Troubleshooting and optimization
  • Application support

We also have a team of experts who are available to answer any questions you may have about Low Voltage MOSFETs. Our team is available 24/7 to provide technical support and service.

 

Packing and Shipping:

Low Voltage MOSFET will be packaged and shipped in two main ways:

  • Individual component packaging: The individual components of Low Voltage MOSFET will be packaged in moisture-resistant bags or boxes and labeled with a part number.
  • Bulk packaging: The components of Low Voltage MOSFET will be bundled together and placed in a large box or container. The box or container will be labeled with a product number.

The packaging and shipping process will be handled by an experienced and reliable shipping company. The company will be responsible for ensuring that the Low Voltage MOSFET is safely and securely packaged, labeled, and delivered to its destination.

 

FAQ:

Q: What is REASUNOS Low Voltage MOSFET?

A: REASUNOS Low Voltage MOSFET is a kind of semiconductor device that can be used as a switch or amplifier.

Q: Where is the Place of Origin for REASUNOS Low Voltage MOSFET?

A: The Place of Origin for REASUNOS Low Voltage MOSFET is Guangdong, China.

Q: What is the Price of REASUNOS Low Voltage MOSFET?

A: The price of REASUNOS Low Voltage MOSFET will be provided after confirming the product.

Q: What is the Packaging Details for REASUNOS Low Voltage MOSFET?

A: REASUNOS Low Voltage MOSFET is packed in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q: How Long is the Delivery Time for REASUNOS Low Voltage MOSFET?

A: The Delivery Time for REASUNOS Low Voltage MOSFET is 2-30 days, depending on the total quantity.

Q: What is the Payment Terms for REASUNOS Low Voltage MOSFET?

A: The Payment Terms for REASUNOS Low Voltage MOSFET is 100% T/T in Advance(EXW).

Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET