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Multiscene Low Power Mosfet Transistors SGT Stable With Low Threshold Voltage

  • Multiscene Low Power Mosfet Transistors SGT Stable With Low Threshold Voltage
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Power Consumption Low Power Loss Product Name Low Voltage MOSFET
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
Structure Process Trench/SGT EAS Capability High EAS Capability
Resistance Low Rds(ON) Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Highlight

Multiscene Low Power Mosfet Transistors

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Low Power Mosfet Transistors SGT

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Stable Mosfet With Low Threshold Voltage
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability

Product Description:

Low Voltage MOSFET is a type of MOSFET which is optimized for use in applications that require low gate voltage and low resistance. It is an advanced semiconductor device which utilizes both trench process and SGT process technologies for superior performance. SGT process is the ideal technology for applications such as motor drivers, 5G base stations, energy storage, high-frequency switching and synchronous rectification. It features breakthrough FOM optimization and covers more application. Trench process technology, on the other hand, is optimized for smaller RSP and can be freely combined and utilized in both series and parallel configurations. Low Voltage MOSFET is the ideal choice for wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch and synchronous rectification, due to its low Rds(ON) and low gate voltage.

 

Technical Parameters:

Product Name Low Voltage MOSFET
Structure Process Trench/SGT
Resistance Low Rds(ON)
Power Consumption Low Power Loss
Efficiency High Efficiency And Reliable
EAS Capability High EAS Capability
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
 

Applications:

REASUNOS Low Voltage MOSFET is a product from Guangdong, China. It has a competitive price that is confirmed based on the product. The packaging is dustproof, waterproof, and anti-static, and is placed inside a cardboard box in cartons. Delivery time is from 2-30 days, depending on the total quantity. Payment terms is 100% T/T in advance, and the product has a supply ability of 5KK/month. The structure process is either Trench or SGT, with Trench process having advantages of Smaller RSP, and Both Series And Parallel Configurations which can be freely combined and utilized. SGT process has advantages of breakthrough FOM optimization, and covers more applications such as Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.

 

Support and Services:

Low Voltage MOSFET products come with a range of technical support and services. We provide customers with the necessary resources to help them achieve optimal results from their Low Voltage MOSFET products. These services include:

  • Design and application support
  • Technical documentation and resources
  • Product FAQs
  • Product troubleshooting assistance
  • Software and firmware updates
  • Product replacements and upgrades
  • Warranty and repair services
 

Packing and Shipping:

Low Voltage MOSFET packaging and shipping follows the standard packaging and shipping process. The product is packaged in an ESD-safe static-dissipative bag and placed in an anti-static shipping box. The box is then secured with bubble wrap and placed in a cardboard outer box, which is then sealed with packing tape. The box is labeled with the customer's name, address, and contact information. The package is then shipped via a reliable shipping service.

 

FAQ:

Q: What is Low Voltage MOSFET?
A: Low Voltage MOSFET is a type of transistor that uses MOSFETs (metal oxide semiconductor field effect transistors) to control current flow in an electronic circuit.
Q: What is the brand name of Low Voltage MOSFET?
A: The brand name of Low Voltage MOSFET is REASUNOS.
Q: Where is the place of origin of Low Voltage MOSFET?
A: The place of origin of Low Voltage MOSFET is Guangdong, China.
Q: What is the price of Low Voltage MOSFET?
A: The price of Low Voltage MOSFET is confirm price based on product.
Q: How is the packaging of Low Voltage MOSFET?
A: The packaging of Low Voltage MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the delivery time of Low Voltage MOSFET?
A: The delivery time of Low Voltage MOSFET is 2-30 days, depending on the total quantity.
Q: What is the payment terms of Low Voltage MOSFET?
A: The payment terms of Low Voltage MOSFET are 100% T/T in advance (EXW).
Q: What is the supply ability of Low Voltage MOSFET?
A: The supply ability of Low Voltage MOSFET is 5KK/month.
Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET