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Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet

  • Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. Resistance Low Rds(ON)
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Product Name Low Voltage MOSFET
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. EAS Capability High EAS Capability
Power Consumption Low Power Loss Structure Process Trench/SGT
Highlight

Motor Driver Low Gate Voltage Mosfet

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N Channel Low Gate Voltage Mosfet

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Multiscene Low Vgs N Channel Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Gate Voltage MOSFET with Reliable and High EAS Capability

Product Description:

Low Voltage MOSFET is a type of high performance, low power consumption field-effect transistor (FET) that provides outstanding performance in terms of low resistance, high efficiency, and reliable operation. It is manufactured using advanced low threshold voltage MOSFET technology, which guarantees low power loss and enables the utilization of both series and parallel configurations. This technology, combined with a special Trench process, allows for the optimization of the figure of merit (FOM) and the reduction of the on-resistance (Rds(ON)) of the MOSFET, thereby making it ideal for applications requiring low power consumption. Furthermore, the SGT process provides additional advantages, such as increased FOM optimization, further reducing the Rds(ON) and allowing for the design of more efficient and reliable circuits. Low Voltage MOSFET is a great solution for applications that need high performance and low power consumption.

 

Technical Parameters:

Parameters Description
Product Name Low Voltage MOSFET
Structure Process Trench/SGT
Power Consumption Low Power Loss
Efficiency High Efficiency And Reliable
EAS Capability High EAS Capability
Resistance Low Rds(ON)
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
 

Applications:

REASUNOS Low Voltage Field Effect Transistor (Low Voltage MOSFET) is an ideal choice for Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, and Synchronous Rectification. It features a Trench Low Voltage MOSFET process and has a low VGS MOSFET structure, providing high efficiency and reliable performance. It also has a smaller RSP and both series and parallel configurations can be freely combined and utilized. With dustproof, waterproof, and anti-static tubular packaging, it is placed inside a cardboard box in cartons for delivery. It takes 2-30 days for delivery (based on total quantity). It is available at a competitive price and supply ability of 5KK/month. Payment terms are 100% T/T in Advance(EXW).

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

At our company, we understand that quality service and support is essential to the success of our customers, so we strive to provide support and service for our Low Voltage MOSFET products that exceeds expectations. Our team of qualified professionals is available to help with any and all technical support needs that our customers may have.

We have a team of engineers and technical experts who are available to answer any questions regarding our Low Voltage MOSFET products. Our technical support team can provide assistance with product selection, installation, troubleshooting, and more. We also have a vast library of resources, such as user manuals, application notes, and videos, that are available online.

We also offer regular maintenance and repair services for our Low Voltage MOSFET products. Our team of experienced technicians is available to inspect and repair any faulty components, as well as provide preventive maintenance services. We also provide warranties on our products, so that our customers can be confident that their purchases are protected.

At our company, we take pride in providing excellent technical support and service for our Low Voltage MOSFET products. Our team is dedicated to helping our customers get the most out of their purchases. If you have any questions or concerns about our products, please do not hesitate to contact us.

 

Packing and Shipping:

Low Voltage MOSFET products should be packaged and shipped in a secure and protective manner. The packaging should include a static-safe bag, a box, and foam cushioning to protect the product from shock and vibration. The box should be clearly labeled with the product name, quantity, and destination address. The products should be shipped with a reliable carrier that provides tracking information.

 

FAQ:

Q: What is the brand name of the Low Voltage MOSFET?
A: REASUNOS.
Q: Where is the place of origin?
A: The place of origin is in Guangdong, China.
Q: What is the price of the Low Voltage MOSFET?
A: Please confirm the price based on the product.
Q: How is the Low Voltage MOSFET packaged?
A: The Low Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: How long is the delivery time?
A: The delivery time depends on the total quantity and usually takes 2-30 days.
Q: What are the payment terms?
A: The payment terms are 100% T/T in Advance(EXW).
Q: What is the supply ability?
A: The supply ability is 5KK/month.
Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET