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SGT Industrial Low Voltage Power Mosfet , Stable Mosfet Low Gate Threshold Voltage

  • SGT Industrial Low Voltage Power Mosfet , Stable Mosfet Low Gate Threshold Voltage
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Structure Process Trench/SGT Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Resistance Low Rds(ON) Product Name Low Voltage MOSFET
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Efficiency High Efficiency And Reliable
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Power Consumption Low Power Loss
Highlight

SGT Low Voltage Power Mosfet

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Industrial Low Voltage Power Mosfet

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Stable Mosfet Low Gate Threshold Voltage
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage MOSFET with Trench Process Advantages for Synchronous Rectification in Both Series and Parallel Configuration

Product Description:

Low Voltage MOSFET is a Low Voltage Field Effect Transistor that is widely used in many applications due to its low threshold voltage and high efficiency. It is a reliable and cost-effective solution for Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch and Synchronous Rectification. It is manufactured using the SGT process for improved EAS capability and high efficiency. The power consumption of Low Voltage MOSFET is also very low, which makes it an ideal choice for various applications.

 

Technical Parameters:

Property Trench Process SGT Process
Structure Process Trench SGT
Product Name Low Voltage MOSFET Low Voltage MOSFET
Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. Breakthrough FOM Optimization, Covering More Application.
Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
EAS Capability High EAS Capability High EAS Capability
Resistance Low Rds(ON) Low Rds(ON)
Power Consumption Low Power Loss Low Power Loss
Efficiency High Efficiency And Reliable High Efficiency And Reliable
 

Applications:

Reasunos Low Voltage MOSFET is a low threshold voltage transistor that is manufactured by Reasunos in Guangdong, China. The price is confirmed based on the product and the packaging details include dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is between 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month. The advantages of the trench process include smaller RSP, and both series and parallel configurations can be freely combined and utilized. The structure process includes trench/SGT for high efficiency and reliability, while the power consumption is low. The SGT process application includes motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification.

 

Support and Services:

Low Voltage MOSFETs technical support and service offers customers access to the latest product information, technical documentation, and custom design tools.

Customers can contact our knowledgeable technical support team for assistance with product selection, design issues, or troubleshooting. We also provide online and telephone customer service and support.

We also offer a range of services to help customers get the most out of their Low Voltage MOSFETs. These services include product customization, technical training, and design assistance. Customers can also access our online tutorials and resources to learn more about the product.

We strive to provide the best customer service and technical support possible. Our team of experts is always available to answer any questions and provide knowledgeable support.

 

Packing and Shipping:

Packaging and Shipping for Low Voltage MOSFET:

The Low Voltage MOSFET will be packed in an anti-static bag and placed in a corrugated cardboard box. The box will be labeled with the product name and the company logo. It will be shipped via a suitable courier service with tracking and insurance.

 

FAQ:

Low Voltage MOSFET Q&A
Q1: What is the brand of Low Voltage MOSFET?
A1: The Low Voltage MOSFET is produced by REASUNOS.
Q2: Where is Low Voltage MOSFET from?
A2: Low Voltage MOSFET is from Guangdong, China.
Q3: What is the price of Low Voltage MOSFET?
A3: The price of Low Voltage MOSFET is depend on product. Please contact us for the details.
Q4: What is the packaging of Low Voltage MOSFET?
A4: Low Voltage MOSFET is packed with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: What is the delivery time and payment terms of Low Voltage MOSFET?
A5: The delivery time of Low Voltage MOSFET is 2-30 days, depending on total quantity. Payment terms is 100% T/T in Advance(EXW). We have a supply ability of 5KK/month.
Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET