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P Channel Low Voltage MOSFET Durable For Wireless Charging Low

  • P Channel Low Voltage MOSFET Durable For Wireless Charging Low
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Product Name Low Voltage MOSFET EAS Capability High EAS Capability
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Efficiency High Efficiency And Reliable
Resistance Low Rds(ON) Power Consumption Low Power Loss
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P Channel Low Voltage MOSFET

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Low Voltage MOSFET Durable

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Wireless Charging Vgs P Channel Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage MOSFET with Trench Process for Synchronous Rectification Breakthrough FOM Optimization with SGT Process 

Product Description:

Low Voltage MOSFET

Low Voltage MOSFET is a type of low gate voltage transistor, designed for low voltage power applications. Featuring a SGT process and a Trench process, the Low Voltage MOSFET is suitable for a wide range of applications, such as motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification, and wireless charging. It is also highly efficient with a high EAS capability.

 

Technical Parameters:

Product Name Low Voltage MOSFET
Power Consumption Low Power Loss
EAS Capability High EAS Capability
Structure Process Trench/SGT
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Efficiency High Efficiency And Reliable
Resistance Low Rds(ON)
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
 

Applications:

Low Voltage MOSFET is a preferred choice for many applications due to its high efficiency, low power loss, and high EAS capability. REASUNOS Low Voltage MOSFET, with its breakthrough FOM optimization and covering more application, is an ideal choice for motor driver, 5G base station, energy storage, high-frequency switch, and synchronous rectification. It features excellent dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons, and delivery time ranging from 2-30 days depending on total quantity. The price is to be confirmed based on product. Moreover, its supply ability is 5KK/month. REASUNOS Low Voltage MOSFET is your trustworthy choice for all kinds of applications.

 

Support and Services:

Low Voltage MOSFET Technical Support and Services

We provide comprehensive technical support and services for Low Voltage MOSFET products, including:

  • 24/7 technical support
  • Free lifetime software updates
  • 30-day money-back guarantee
  • 1-year warranty
  • Free technical resources and tutorials
  • Access to our online support forum

If you need help with any Low Voltage MOSFET product, please contact us and we will be happy to assist you.

 

Packing and Shipping:

Packaging and Shipping of Low Voltage MOSFET

Low Voltage MOSFET products shall be packaged and shipped in accordance with the following standards:

  • The product must be wrapped in a protective material such as bubble wrap, foam, or plastic wrap to prevent damage.
  • The product must be placed into a sturdy cardboard box or other suitable container.
  • The product must be labeled clearly with the sender’s and recipient’s addresses, contact information, and applicable product information.
  • All shipments must be tracked and insured.
  • The product must be shipped with all necessary documentation.
 

FAQ:

Q1:What is the brand name of Low Voltage MOSFET?

A1:The brand name of Low Voltage MOSFET is REASUNOS.

Q2:Where is the place of origin of Low Voltage MOSFET?

A2:The place of origin of Low Voltage MOSFET is Guangdong, CN.

Q3:What is the price of Low Voltage MOSFET?

A3:The price of Low Voltage MOSFET is confirmed based on the product.

Q4:What is the packaging details of Low Voltage MOSFET?

A4:The packaging details of Low Voltage MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5:What is the delivery time and payment terms of Low Voltage MOSFET?

A5:The delivery time of Low Voltage MOSFET is 2-30 days (Depends on Total Quantity) and the payment terms is 100% T/T in Advance (EXW).

Tags:

N Channel Mosfet Low Threshold Voltage

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