Industrial Low Voltage MOSFET Multifunctional For 5G Base Station

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Power Consumption Low Power Loss EAS Capability High EAS Capability
Resistance Low Rds(ON) Structure Process Trench/SGT
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
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Industrial Low Voltage MOSFET

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Base Station Low Voltage MOSFET

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Multifunctional Mosfet Low Voltage

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Trench Low Voltage MOSFET with Low Rds(ON) and SGT Process Advantages Covering More Applications

Product Description:

Low Voltage MOSFET is a type of field-effect transistor (FET) that operates at low voltage and has low threshold voltage. It is widely used in various applications due to its low Rds(ON) resistance, low power loss, and high EAS capability. Its applications include wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. It is also used in 5G base stations, energy storage, and high-frequency switch. Low voltage FETs provide excellent performance in these applications by allowing the current to flow at low voltages, reducing power loss and ensuring high EAS capability.

 

Technical Parameters:

Technical Parameter Description
Product name Low Voltage MOSFET
Power consumption Low Power Loss
EAS capability High EAS Capability
Structure process Trench/SGT
Resistance Low Rds(ON)
Trench process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
SGT process Advantages Breakthrough FOM Optimization, Covering More Application.
Efficiency High Efficiency And Reliable
Trench process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
SGT process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
 

Applications:

REASUNOS Low Voltage MOSFET is a low voltage field effect transistor with a brand name of REASUNOS that can be used in a variety of applications such as wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification. It is characterized by its low gate voltage, low Rds(ON) resistance and low power loss, which makes it an ideal choice for low power applications. The product is produced from the advanced trench process that provides smaller RSP and allows both series and parallel configurations to be freely combined and utilized.

REASUNOS Low Voltage MOSFET has an origin of Guangdong, China and the price is confirmed based on product. Its packaging is dustproof, waterproof, and anti-static tubular packaging, which is placed inside a cardboard box in cartons. The delivery time is 2-30 days depending on the total quantity. The payment terms are 100% T/T in Advance(EXW) and the Supply Ability is 5KK/month. It has a high EAS capability and a low Rds(ON) resistance, which makes it a highly efficient and reliable product.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

At XYZ, we strive to provide our customers with the highest level of technical support and service for our Low Voltage MOSFET products. Our team of professionals is available to offer assistance with installation, troubleshooting, and product maintenance.

We provide support for the following Low Voltage MOSFET products:

  • Low Voltage Power MOSFETs
  • Low Voltage Logic Level MOSFETs
  • Low Voltage Gate Driver MOSFETs
  • Low Voltage MOSFET Arrays

We also offer technical assistance and advice on how to optimize the performance of our Low Voltage MOSFET products.

For technical support and service, please contact us at [email address] or call us at [phone number].

 

Packing and Shipping:

Packaging and Shipping for Low Voltage MOSFET:

  • The product is packaged in a static-safe container.
  • The Low Voltage MOSFET is securely packaged in anti-static bags.
  • The product is transported in an anti-static container.
  • The product is shipped with appropriate shipping documentation.
  • The product is shipped in accordance with all applicable international shipping regulations.
 

FAQ:

Q1: What is the brand name of the Low Voltage MOSFET?
A1: The brand name of the Low Voltage MOSFET is REASUNOS.
Q2: Where is the Low Voltage MOSFET produced?
A2: The Low Voltage MOSFET is produced in Guangdong, China.
Q3: How much is the Low Voltage MOSFET?
A3: The price of the Low Voltage MOSFET is confirmed based on the product.
Q4: How is the Low Voltage MOSFET packaged?
A4: The Low Voltage MOSFET is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: How long will it take for the Low Voltage MOSFET to be delivered?
A5: The delivery time of the Low Voltage MOSFET depends on the total quantity. Generally it takes 2-30 days.