Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |

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xEmbedded FRD HV MOSFET Application | Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. | Heat Dissipation | Great Heat Dissipation |
---|---|---|---|
Technology | MOSFET | Advantages | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Ultra-HV MOSFET Application | Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. | Product Name | High Voltage MOSFET |
Resistance | Low On-resistance | Voltage Rating | High Voltage/Ultra-high Voltage |
Highlight | Heatproof High Voltage Sic Mosfet,N Channel High Voltage Sic Mosfet,Multipurpose N Channel Fet Transistor |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | Diode Trr(nS) | |
---|---|---|---|---|---|---|---|---|---|---|
1 | RSF38N30F | N | 38 | 300 | 0.09 | 0.11 | TO-220F | 1000 | 80 | |
2 | RSF45N50W | N | 45 | 500 | 0.1 | 0.125 | TO-247 | 600 | 95 | |
3 | RSF5N50D | N | 5 | 500 | 1.5 | 1.85 | TO-252 | 2500 | 61 | |
4 | RSF7N50D | N | 7 | 500 | 1.1 | 1.5 | TO-252 | 2500 | 100 | |
5 | RSF3N60D | N | 3 | 600 | 2.8 | 3.4 | TO-252 | 2500 | 55 | |
6 | RSF4N60D | N | 4 | 600 | 2 | 2.4 | TO-252 | 2500 | 60 | |
7 | RSF4N60F | N | 4 | 600 | 2 | 2.4 | TO-220F | 1000 | 60 | |
8 | RS2N65D | N | 2 | 650 | 3.8 | 4.5 | TO-252 | 2500 | -- | |
9 | RS2N65F | N | 2 | 650 | 3.8 | 4.5 | TO-220F | 1000 | -- | |
10 | RS4N65D | N | 4 | 650 | 2 | 2.4 | TO-252 | 2500 | -- | |
11 | RS4N65MD | N | 4 | 650 | 2 | 2.4 | TO-251 | 4000 | -- | |
12 | RS4N65F | N | 4 | 650 | 2 | 2.4 | TO-220F | 1000 | -- | |
13 | RS5N65D | N | 5 | 650 | 1.8 | 2.1 | TO-252 | 2500 | -- | |
14 | RS5N65F | N | 5 | 650 | 1.8 | 2.1 | TO-220F | 1000 | -- | |
15 | RS6N65D | N | 6 | 650 | 1.65 | 1.9 | TO-252 | 2500 | -- | |
16 | RS6N60F | N | 6 | 600 | 1 | 1.15 | TO-220F | 1000 | -- | |
17 | RS6N65F | N | 6 | 650 | 1.65 | 1.9 | TO-220F | 1000 | -- | |
18 | RS7N65D | N | 7 | 650 | 1.1 | 1.4 | TO-252 | 2500 | -- | |
19 | RS7N65MD | N | 7 | 650 | 1.1 | 1.4 | TO-251 | 4000 | -- | |
20 | RS7N65F | N | 7 | 650 | 1.1 | 1.4 | TO-220F | 1000 | -- | |
21 | RS8N60F | N | 8 | 600 | 0.75 | 0.9 | TO-220F | 1000 | -- | |
22 | RS8N65F | N | 8 | 650 | 0.95 | 1.15 | TO-220F | 1000 | -- | |
23 | RS10N65D | N | 10 | 650 | 0.93 | 1.05 | TO-252 | 2500 | -- | |
24 | RS10N65F | N | 10 | 650 | 0.65 | 0.8 | TO-220F | 1000 | -- | |
25 | RS10N60F | N | 10 | 600 | 0.6 | 0.72 | TO-220F | 1000 | -- | |
26 | RS12N65F | N | 12 | 650 | 0.6 | 0.72 | TO-220F | 1000 | -- | |
27 | RS12N60F | N | 12 | 600 | 0.5 | 0.62 | TO-220F | 1000 | -- | |
28 | RS13N65F | N | 13 | 650 | 0.52 | 0.65 | TO-220F | 1000 | -- | |
29 | RS16N65F | N | 16 | 650 | 0.45 | 0.55 | TO-220F | 1000 | -- | |
30 | RS20N65F | N | 20 | 650 | 0.35 | 0.45 | TO-220F | 1000 | -- | |
31 | RS5N50D | N | 5 | 500 | 1.25 | 1.45 | TO-252 | 2500 | -- | |
32 | RS6N50D | N | 6 | 500 | 1.2 | 1.5 | TO-252 | 2500 | -- | |
33 | RS9N50D | N | 9 | 500 | 0.65 | 0.8 | TO-252 | 2500 | -- | |
34 | RS9N50F | N | 9 | 500 | 0.65 | 0.8 | TO-220F | 1000 | -- | |
35 | RS10N50F | N | 10 | 500 | 0.66 | 0.8 | TO-220F | 1000 | -- | |
36 | RS11N50F | N | 11 | 500 | 0.48 | 0.6 | TO-220F | 1000 | -- | |
37 | RS13N50F | N | 13 | 500 | 0.39 | 0.46 | TO-220F | 1000 | -- | |
38 | RS15N50F | N | 15 | 500 | 0.35 | 0.42 | TO-220F | 1000 | -- | |
39 | RS18N50F | N | 18 | 500 | 0.28 | 0.34 | TO-220F | 1000 | -- | |
40 | RS20N50F | N | 20 | 500 | 0.21 | 0.27 | TO-220F | 1000 | -- | |
41 | RS20N50W | N | 20 | 500 | 0.21 | 0.27 | TO-247-3 | 600 | -- | |
42 | RS25N50F | N | 25 | 500 | 0.18 | 0.24 | TO-220F | 1000 | -- | |
43 | RS25N50W | N | 25 | 500 | 0.18 | 0.24 | TO-247-3 | 600 | -- | |
44 | RS28N50W | N | 28 | 500 | 0.14 | 0.18 | TO-247-3 | 600 | -- | |
45 | RS30N50W | N | 30 | 500 | 0.085 | 0.12 | TO-247-3 | 600 | -- | |
46 | RS4N80F | N | 4 | 800 | 3.2 | 3.8 | TO-220F | 1000 | -- | |
47 | RS8N80F | N | 8 | 800 | 1.35 | 1.6 | TO-220F | 1000 | -- | |
48 | RS10N80F | N | 10 | 800 | 1 | 1.2 | TO-220F | 1000 | -- | |
49 | RS3N90MD | N | 3 | 900 | 4 | 4.8 | TO-251 | 4000 | -- | |
50 | RS4N90D | N | 4 | 900 | 3 | 3.5 | TO-252 | 2500 | -- | |
51 | RS4N90F | N | 4 | 900 | 3 | 3.5 | TO-220F | 1000 | -- | |
52 | RS6N90F | N | 6 | 900 | 1.7 | 2.05 | TO-220F | 1000 | -- | |
53 | RS9N90F | N | 9 | 900 | 1.2 | 1.55 | TO-220F | 1000 | -- | |
54 | RS9N90PF | N | 9 | 900 | 1.2 | 1.55 | TO-3PF | 300 | -- | |
55 | RS2N100D | N | 2 | 1000 | 6 | 7.2 | TO-252 | 2500 | -- | |
56 | RSE3N100F | N | 3 | 1000 | 4.6 | 5.5 | TO-220F | 1000 | -- | |
57 | RS6N100F | N | 6 | 1000 | 1.2 | 1.5 | TO-220F | 1000 | -- | |
58 | RS2N120D | N | 2 | 1200 | 10.5 | 12.5 | TO-252 | 2500 | -- | |
59 | RS3N120D | N | 3 | 1200 | 7.3 | 8.5 | TO-252 | 2500 | -- | |
60 | RS6N120T | N | 6 | 1200 | 2.1 | 2.5 | TO-220 | 1000 | -- | |
61 | RS3N150F | N | 3 | 1500 | 5.5 | 6.5 | TO-220F | 1000 | -- | |
62 | RS3N150PF | N | 3 | 1500 | 5.5 | 6.5 | TO-3PF | 300 | -- | |
63 | RS3N150W | N | 3 | 1500 | 5.5 | 6.5 | TO247-3 | 600 | -- |
Product Description:
High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range of applications. It offers excellent characteristics in high temperature and is extremely suitable for use in embedded FRD, motor series, inverters, half bridge/full bridge circuits, and ultra-high voltage applications such as smart meters, cabinet power supplies, industrial switching power supplies, and electrical power systems.
High Voltage MOSFETs are highly efficient and feature a unique lateral variable doping technology and special power MOS structure that allow for superior power handling and increased system reliability. With its high voltage/ultra-high voltage rating, this device can easily withstand the toughest conditions and is ideal for use in high-end applications.
High Voltage MOSFETs offer users a reliable, cost-effective solution for their high voltage applications. This device is capable of providing excellent performance and long-term reliability, making it an ideal choice for a wide range of applications.
Technical Parameters:
Technology | High Voltage MOSFET |
---|---|
Resistance | Low On-resistance |
Embedded FRD HV MOSFET Application | Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. |
Heat Dissipation | Great Heat Dissipation |
Ultra-HV MOSFET Application | Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. |
Voltage Rating | High Voltage/Ultra-high Voltage |
Leakage | Low Leakage Can Reach Less Than 1 µ A |
Advantages | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Product name | High Voltage MOSFET |
Type | N |
Applications:
REASUNOS is a leading brand of high voltage MOS-gate transistor that offers superior performance in switching applications. The embedded FRD High Voltage MOSFET, with its advanced technology, features a high voltage rating, low leakage, and excellent characteristics in high-temperature. It is made of a new lateral variable doping technology and special power MOS structure, making it suitable for LED drivers, adaptors, industrial switching power supplies, inverters, etc.
- Brand Name: REASUNOS
- Place of Origin: Guangdong, China
- Price: Confirm price based on product
- Packaging Details: Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
- Delivery Time: 2-30 days (Depends on Total Quantity)
- Payment Terms: 100% T/T in Advance(EXW)
- Supply Ability: 5KK/month
- Type: N
- Voltage Rating: High Voltage/Ultra-high Voltage
- HV Mosfet Application: LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
- Leakage: Low Leakage Can Reach Less Than 1 µ A
- Advantages: New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Support and Services:
We provide technical support and service for our High Voltage MOSFET products. Our team of experienced professionals are available to help you with any questions you may have regarding our products. Our technical support staff can offer assistance with product selection, installation, operation, troubleshooting, and repair. We also offer a wide range of services such as custom design, prototyping, and product testing.
Our technical support team is committed to providing the highest level of customer service. We strive to respond to customer inquiries as quickly as possible and provide the best possible solutions. Our team is available by phone, email, and online chat.
We also provide detailed product documentation and manuals, as well as online training and workshops. If you need further help, our team of experts is available to answer any questions you may have. Contact us today to learn more about our High Voltage MOSFET technical support and service.
Packing and Shipping:
High Voltage MOSFET Packaging and Shipping
High Voltage MOSFETs are sensitive devices and must be properly packaged and shipped in order to ensure that they arrive in working condition.
- The MOSFETs should be wrapped in static-free packaging material.
- The package should be labeled with a warning about the sensitivity of the product.
- The package should be shipped using a reliable shipping method.
- The package should be tracked and insured.
- The package should be stored in a cool, dry place.
FAQ:
A1: High Voltage MOSFET is a type of insulated-gate field-effect transistor (IGFET) that is designed to handle higher voltages, up to hundreds of volts. It is used for applications such as power amplification, motor control, low-noise amplifiers, and other high-voltage switching applications.
A2: The brand name of High Voltage MOSFET is REASUNOS.
A3: The place of origin of High Voltage MOSFET is Guangdong, China.
A4: The packaging of High Voltage MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
A5: The delivery time of High Voltage MOSFET is 2-30 days, depending on the total quantity.