Multiscene Ultra High Voltage Power Transistor 500V For Industrial

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc Voltage Rating High Voltage/Ultra-high Voltage
Product Name High Voltage MOSFET Technology MOSFET
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. Leakage Low Leakage Can Reach Less Than 1 µ A
Heat Dissipation Great Heat Dissipation Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
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Multiscene High Voltage Power Transistor

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High Voltage Power Transistor 500V

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Industrial Ultra High Voltage Transistor

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Ultra-High Voltage MOSFET with Low On-resistance New Lateral Variable Doping Technology

Product Description:

High Voltage MOSFET is a new type of power MOSFET transistor with high voltage and ultra-high voltage based on the latest lateral variable doping technology. It features low leakage current, which can reach less than 1µA, and excellent characteristics in high-temperature. This High Voltage MOSFET offers many benefits such as high efficiency, high switching speed, and low on-resistance. It is widely used in smart meter, cabinet power supply, industrial switching power supply and electrical power system, etc.

The unique lateral variable doping technology ensures that the gate oxide of Ultra-HV MOSFET can resist high voltage and high temperature. The special power MOS structure provides high voltage and ultra-high voltage performance. The high voltage power MOSFET has low leakage current and excellent characteristics in high-temperature, which makes it a perfect choice for those high-temperature applications.

High Voltage MOSFET is an ideal solution for applications that require high voltage and ultra-high voltage performance. It is also suitable for those applications that require low leakage current and excellent characteristics in high-temperature. With its superior performance, High Voltage MOSFET is your best choice for power applications.

 

Technical Parameters:

Technology MOSFET
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Voltage Rating High Voltage/Ultra-high Voltage
Resistance Low On-resistance
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Leakage Low Leakage Can Reach Less Than 1 µ A
Type N
Heat Dissipation Great Heat Dissipation
 

Applications:

Reasunos high voltage fet, hv mosfet and ultra-hv MOSFET are the perfect choice for motor series, inverter, half bridge/full bridge circuit applications and more. With its low on-resistance and new lateral variable doping technology, special power MOS structure, excellent characteristics in high-temperature, this product is a great choice.

This product is manufactured in Guangdong, China and is available for a competitive price, dependant on the order quantity. It is professionally packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is usually between 2-30 days, depending on the total quantity and payment is required in advance via 100% T/T (EXW). Reasunos has a supply ability of 5KK/month.

 

Support and Services:

High Voltage MOSFET Technical Support and Services

We provide reliable technical support and services for High Voltage MOSFET customers. Our technical support team is comprised of highly skilled and knowledgeable engineers and technicians who have extensive experience in High Voltage MOSFET.

We offer comprehensive technical support and services for our High Voltage MOSFET products. This includes providing advice on product selection and installation, troubleshooting, and helping customers to optimize their system design. We also offer on-site training and technical support for customers who need assistance with their High Voltage MOSFET products.

Our technical support and services are available 24 hours a day, 7 days a week. We provide fast and reliable responses to customer inquiries, and our team is always available to answer any questions or concerns customers may have.

We also offer regular software and firmware updates to ensure that our High Voltage MOSFET products are up to date and remain reliable. We also provide technical support and services for our customers’ legacy High Voltage MOSFET products.

We strive to provide our customers with the best possible technical support and services for their High Voltage MOSFET products. Our team is committed to providing excellent customer service and ensuring our customers have a positive experience with our products.

 

Packing and Shipping:

High Voltage MOSFET Packaging and Shipping

High Voltage MOSFETs are packaged and shipped in static-safe materials. The product is protected from shock, vibration, and temperature changes. It is packaged in an ESD-safe container and shipped in a secure, padded box.

The box is labeled with the product's name, model number, and other relevant details. It also includes a packing list to ensure the customer receives all items they ordered. The box is then closed and sealed with tape to ensure the product arrives safely.

 

FAQ:

Q1: What is High Voltage MOSFET?

A1: High Voltage MOSFET is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which can handle high voltage, produced by Reasunos.

Q2: Where does Reasunos produce High Voltage MOSFET?

A2: Reasunos produces High Voltage MOSFET in Guangdong, China.

Q3: How much does it cost?

A3: The price of the High Voltage MOSFET depends on the product; please contact Reasunos for a confirm price.

Q4: How is it packaged?

A4: The High Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: What is the delivery time?

A5: The delivery time of the High Voltage MOSFET is 2-30 days, depending on the total quantity.