Practical High Voltage Transistor , Multipurpose N Channel Power Mosfet

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Resistance Low On-resistance Voltage Rating High Voltage/Ultra-high Voltage
Heat Dissipation Great Heat Dissipation Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. Leakage Low Leakage Can Reach Less Than 1 µ A
Technology MOSFET Product Name High Voltage MOSFET
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Practical High Voltage Transistor

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N Channel High Voltage Transistor

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Multipurpose N Channel Power Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Ultra-High Voltage N MOSFET with Great Heat Dissipation

Product Description:

High Voltage MOSFET is a type of ultra-high voltage power MOSFET with an FRD HV MOSFET application. It utilizes a new lateral variable doping technology and a special power MOS structure to provide excellent characteristics in high temperature and low leakage that can reach less than 1µA. It is suitable for various high voltage fet applications such as motor series, inverter, half bridge/full bridge circuit applications, LED driver, adaptors, industrial switching power supply, inverters, etc. This type of MOSFET is N type, providing an optimal solution for high voltage applications.

 

Technical Parameters:

Parameters Specification
Leakage Low Leakage Can Reach Less Than 1 µ A
Heat Dissipation Great Heat Dissipation
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Product name High Voltage MOSFET
HV MOSFET Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters, Etc.
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Voltage Rating High Voltage/Ultra-high Voltage
Type N
Technology MOSFET
 

Applications:

REASUNOS High Voltage Mosfet is a type of power mosfet transistor, specially designed for high voltage and ultra-high voltage applications. Featuring a new Lateral Variable Doping Technology and a special power MOS structure, it has excellent characteristics in high-temperature and provides low leakage, low on-resistance and high voltage/ultra-high voltage performance. It is ideal for applications such as solar inverters, motor drives, UPS systems, and automotive power electronics.

REASUNOS High Voltage Mosfet can be purchased from Guangdong, China at a competitive price. It is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons for maximum safety. The delivery time is usually between 2-30 days, depending on the total quantity ordered. Payment terms are 100% T/T in advance (EXW). The company has a supply ability of 5KK/month.

 

Support and Services:

High Voltage MOSFET products are supported and serviced with the following features:

  • Data sheets and product specification
  • Application notes
  • Design and simulation tools
  • Technical support
  • Product samples
  • Product training
  • Field application engineering support
  • Warranty and repair services
 

Packing and Shipping:

Packaging and Shipping for High Voltage MOSFET

High Voltage MOSFET products should be packaged and shipped using the following guidelines:

 

  • High Voltage MOSFET products should be packaged in an ESD protected bag.
  • The bag should be clearly labeled with product information and the shipping address.
  • All High Voltage MOSFET products should be shipped in a static-dissipative shipping container.
  • The container should be labeled with the product information, shipping address, and any appropriate warnings.
  • The container should be securely sealed and secured prior to shipment.
  • High Voltage MOSFET products should be shipped according to the customer’s instructions.

 

 

FAQ:

Q: What is the Brand Name?
A: The Brand Name is REASUNOS.
Q: Where is High Voltage MOSFET placed of origin?
A: The Place of Origin is Guangdong, CN.
Q: What is the Price?
A: The Price needs to be confirmed based on the product.
Q: How do you package the High Voltage MOSFET?
A: We package the High Voltage MOSFET with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the delivery time?
A: The Delivery Time is 2-30 days, depending on the total quantity.