Multiscene Low Voltage MOSFET P Channel For Energy Storage SGT Process

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Product Name Low Voltage MOSFET Efficiency High Efficiency And Reliable
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Power Consumption Low Power Loss
EAS Capability High EAS Capability Structure Process Trench/SGT
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. Resistance Low Rds(ON)
High Light

Multiscene Low Voltage MOSFET

,

Low Voltage MOSFET P Channel

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SGT Low Voltage P Channel Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage Power MOSFET with Low Power Loss for Energy Storage SGT Process Application

Product Description:

Low Voltage MOSFET is an advanced low power loss transistor technology, which has a low threshold voltage, low power consumption and low Rds(ON). With high efficiency and reliable performance, it is suitable for a wide range of applications, including wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch and synchronous rectification. It adopts the trench process to achieve superior performance. Low Voltage MOSFET is an ideal solution for those who need low voltage, low power loss and high efficiency.

 

Technical Parameters:

Parameter Features
Power consumption Low Power Loss
Product name Low Voltage MOSFET
Trench process Smaller RSP
Both Series and Parallel Configurations Can Be Freely Combined And Utilized.
SGT process Breakthrough FOM Optimization
covering More Application.
Efficiency High Efficiency and Reliable
EAS capability High EAS Capability
resistance Low Rds(ON)
Structure process Trench/SGT
Threshold Voltage Low Threshold Voltage MOSFET
Gate Voltage Low Gate Voltage MOSFET
 

Applications:

Low Voltage MOSFET, branded REASUNOS, is produced in Guangdong, China, and the price will be based on the product. It comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons, and can be delivered in 2-30 days, depending on the total quantity. The payment terms are 100% T/T in Advance (EXW). The production capacity is 5KK/month, and it is highly efficient and reliable. It has two types of structure processes, Trench and SGT. The SGT process is applicable for motor driver, 5G base station, energy storage, high frequency switch and synchronous rectification, and it features low power loss. The Trench process has the advantages of smaller RSP and both series and parallel configurations can be freely combined and utilized.
 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We are committed to providing technical support and service for our Low Voltage MOSFET products. Our team is made up of experienced professionals who are ready to answer any questions you may have.

Our technical support staff can help you with product selection, installation, troubleshooting, and maintenance. We can also offer advice on best practices and provide the necessary resources to ensure successful implementation of our products.

We also provide on-site repair and maintenance services. Our technicians are highly trained and knowledgeable in the operation and functioning of our Low Voltage MOSFET products. They can quickly diagnose and repair any issues you may be having with your system.

If you have any questions or concerns about our Low Voltage MOSFET products, please do not hesitate to contact us. Our team is here to help and provide the highest level of technical support and service.

 

Packing and Shipping:

Low Voltage MOSFET products come packaged in a sealed plastic bag. The bag is then placed in a strong cardboard box to protect the product from any damage during shipping. The box is then sealed with packing tape and labeled for easy identification. The box is then shipped via a reputable carrier such as FedEx, UPS, or DHL.

 

FAQ:

Q&A about Low Voltage MOSFET

Q1: What is the Brand Name of Low Voltage MOSFET?
A1: The Brand Name of Low Voltage MOSFET is REASUNOS.

Q2: Where is the Place of Origin of Low Voltage MOSFET?
A2: The Place of Origin of Low Voltage MOSFET is Guangdong, CN.

Q3: How about the Price of Low Voltage MOSFET?
A3: The Price of Low Voltage MOSFET is Confirm price based on product.

Q4: What is the Packaging Details of Low Voltage MOSFET?
A4: The Packaging Details of Low Voltage MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: What is the Delivery Time and Payment Terms of Low Voltage MOSFET?
A5: The Delivery Time of Low Voltage MOSFET is 2-30 days (Depends on Total Quantity) and the Payment Terms is 100% T/T in Advance(EXW).

Q6: What is the Supply Ability of Low Voltage MOSFET?
A6: The Supply Ability of Low Voltage MOSFET is 5KK/month.