Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet

Place of Origin Guangdong, CN
Brand Name REASUNOS
Minimum Order Quantity 600
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Power High Power Frequency High Frequency
Material Silicon Carbide Product Name Silicon Carbide MOSFET
Type N Device Type MOSFET
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Industrial Sic Power Transistors

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N Channel Sic Power Transistors

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Stable High Voltage N Channel Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSM065030W N 55 650 30 50 TO247-3 600
2 RSM065030Z N 55 650 30 50 TO247-4 600
3 RSM065060W N 29 650 60 79 TO247-3 600
4 RSM065060Z N 29 650 60 79 TO247-4 600
5 RSM120018Z N 105 1200 18 26 TO247-4 600
6 RSM120025W N 90 1200 25 34 TO247-3 600
7 RSM120025Z N 90 1200 25 34 TO247-4 600
8 RSM120040W N 68 1200 40 55 TO247-3 600
9 RSM120040Z N 68 1200 40 55 TO247-4 600
10 RSM120075W N 33 1200 75 95 TO247-3 600
11 RSM120075Z N 33 1200 75 95 TO247-4 600
12 RSM120080W N 36 1200 80 98 TO247-3 600
13 RSM120080Z N 36 1200 80 98 TO247-4 600
14 RSM120160W N 18 1200 160 196 TO247-3 600
15 RSM120160Z N 18 1200 160 196 TO247-4 600
16 RSM1701K0W N 5 1700 1000 1300 TO247-3 600
17 RSM1701K0Z N 5 1700 1000 1300 TO247-4 600
18 RSM170045W N 72 1700 45 70 TO247-3 600
19 RSM170045Z N 72 1700 45 70 TO247-4 600
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Product Description:

Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs can dramatically reduce switching losses and increase power density, providing high efficiency with low operating temperatures. With excellent thermal stability, SiC MOSFETs are ideal for highly demanding applications, such as power conversion and high power switching.

 

Technical Parameters:

Parameter Value
Material Silicon Carbide
Product Name Silicon Carbide MOSFET
Resistance Low On Resistance
Type N Type
Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Device Type MOSFET
Power High Power
Frequency High Frequency
Efficiency High Efficiency
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
SiC Field Effect Transistor Yes
Metal-Oxide-Semiconductor Field Effect Transistor Yes
Metal Oxide Semiconductor Field Effect Transistor Yes
 

Applications:

REASUNOS Silicon Carbide MOSFET is a type of Field Effect Transistor (FET) based on Silicon Carbide (SiC) metal-oxide-semiconductor. It provides low on-resistance and high frequency capabilities for applications such as solar inverter, high-voltage DC/DC converters, motor driver, UPS power supply, switching power supply, charging pile and other high power systems. It is offered with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The minimum order quantity is 600 and price is negotiable based on the product. Supply ability is 5KK/month and delivery time is usually 2-30 days depending on the total quantity. Payment terms are 100% T/T in Advance(EXW).

 

Support and Services:

Silicon Carbide MOSFET offers a range of technical support and services to ensure the best performance of your device. Our team of experienced engineers can provide support on the following topics:

  • Design optimization
  • Product selection and evaluation
  • Product troubleshooting and maintenance
  • Application specific solutions
  • System integration and validation
  • Software and firmware development

We also offer a wide range of training courses to ensure that you and your team are well-versed in the use of Silicon Carbide MOSFET technology. Our courses cover topics such as:

  • Design fundamentals
  • Product operation and maintenance
  • System integration and validation
  • Software and firmware development
  • Troubleshooting and repair

If you have any questions or need assistance, please contact us at any time. Our team is always here to help.

 

Packing and Shipping:

Silicon Carbide MOSFET Packaging and Shipping:

The Silicon Carbide MOSFET will be packaged in an appropriate box or container to ensure its safe arrival. The box or container will be labeled with the product name and barcode for easy identification and tracking. The shipment will be handled by a reliable shipping provider and tracked through their tracking system.

 

FAQ:

Silicon Carbide MOSFET FAQs

Q1: What is the Brand Name for Silicon Carbide MOSFET?
A1: The Brand Name for Silicon Carbide MOSFET is REASUNOS.

Q2: Where is the Place of Origin for Silicon Carbide MOSFET?
A2: The Place of Origin for Silicon Carbide MOSFET is Guangdong, CN.

Q3: What is the Minimum Order Quantity for Silicon Carbide MOSFET?
A3: The Minimum Order Quantity for Silicon Carbide MOSFET is 600.

Q4: What is the Packaging Details for Silicon Carbide MOSFET?
A4: The Packaging Details for Silicon Carbide MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: What is the Delivery Time for Silicon Carbide MOSFET?
A5: The Delivery Time for Silicon Carbide MOSFET is 2-30 days (Depends on Total Quantity).