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Converter Silicon Carbide MOSFET Durable Multi Function Low On Resistance
| Place of Origin | Guangdong, CN |
|---|---|
| Brand Name | REASUNOS |
| Minimum Order Quantity | 600 |
| Price | Confirm price based on product |
| Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
| Delivery Time | 2-30 days (Depends on Total Quantity) |
| Payment Terms | 100% T/T in Advance(EXW) |
| Supply Ability | 5KK/month |
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xProduct Details
| Resistance | Low On Resistance | Device Type | MOSFET |
|---|---|---|---|
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable | Type | N |
| Power | High Power | Material | Silicon Carbide |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. | Efficiency | High Efficiency |
| Highlight | Converter Silicon Carbide MOSFET,Silicon Carbide MOSFET Durable,Multi Function Sic Mosfets |
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| No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
| 2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
| 3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
| 4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
| 5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
| 6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
| 7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
| 8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
| 9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
| 10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
| 11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
| 12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
| 13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
| 14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
| 15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
| 16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
| 17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
| 18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
| 19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Product Description
Low On Resistance Silicon Carbide MOSFET Device for Etc. Applications
Product Description:
Silicon Carbide MOSFET Overview
Silicon Carbide MOSFET is an advanced Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based on silicon carbide, which is known as one of the most reliable semiconductor materials. This type of MOSFET offers low on-resistance and high efficiency, making it an ideal choice for many applications. It is produced based on the national military standard production line, ensuring the process is stable and the quality is reliable.
This MOSFET is based on the silicon carbide material, which is a compound semiconductor. This material has wide bandgap and high breakdown voltage, making it an excellent choice for a wide range of applications. It also offers excellent thermal conductivity, enabling it to be used in high power applications.
Silicon Carbide MOSFET is highly reliable and offers low on-resistance, high efficiency, and high thermal conductivity. It is produced based on the national military standard production line, ensuring the process is stable and the quality is reliable. This makes it an ideal choice for many applications.
Technical Parameters:
| Parameter | Description |
|---|---|
| Power | High Power |
| Material | Silicon Carbide |
| Type | N |
| Device Type | MOSFET |
| Efficiency | High Efficiency |
| Frequency | High Frequency |
| Resistance | Low On Resistance |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Product name | Silicon Carbide MOSFET |
Applications:
Silicon Carbide MOSFET
REASUNOS Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is made of silicon carbide material, designed to deliver high efficiency and performance. It is produced in Guangdong, China, with a minimum order quantity of 600. It is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time range from 2-30 days, depending on total quantity. 100% T/T in Advance (EXW) is required for payment terms. The supply ability is up to 5KK/month. The device type is MOSFET, and it is suitable for high efficiency applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc.
Support and Services:
Silicon Carbide MOSFET Technical Support and Service
We provide our customers with comprehensive technical support and service for our Silicon Carbide MOSFET product. Our team of experts is available to help answer any questions you may have and provide guidance on proper use of the product. We also offer a range of services which include:
- Technical advice and support
- Product installation and troubleshooting
- Upgrades and repairs
- On-site maintenance
- Technical training
For more information about our Silicon Carbide MOSFET products and services, please visit our website or contact us directly.
Packing and Shipping:
Silicon Carbide MOSFET is packaged and shipped in sealed cardboard boxes with anti-static bags inside. The boxes are labeled with product information, such as product name, quantity, and destination address. Temperature, humidity, and shock-proof packing materials are used to ensure that the product is not damaged during transportation. The boxes are then placed on pallets and shrink-wrapped for shipping.
FAQ:
- Q: What is the brand name of the Silicon Carbide MOSFET?
- A: The brand name of the Silicon Carbide MOSFET is REASUNOS.
- Q: Where is the Silicon Carbide MOSFET made?
- A: The Silicon Carbide MOSFET is made in Guangdong, China.
- Q: How much is the minimum order quantity?
- A: The minimum order quantity is 600.
- Q: What is the packaging for the Silicon Carbide MOSFET?
- A: The packaging for the Silicon Carbide MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
- Q: What is the delivery time for the Silicon Carbide MOSFET?
- A: The delivery time for the Silicon Carbide MOSFET is 2-30 days, depending on the total quantity.
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