Solar Inverter Silicon Carbide MOSFET N Channel For Industrial

Place of Origin Guangdong, CN
Brand Name REASUNOS
Minimum Order Quantity 600
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Device Type MOSFET Frequency High Frequency
Resistance Low On Resistance Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Efficiency High Efficiency Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Power High Power Product Name Silicon Carbide MOSFET
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Solar Inverter Silicon Carbide MOSFET

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Silicon Carbide MOSFET N Channel

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Industrial Silicon N Channel Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSM065030W N 55 650 30 50 TO247-3 600
2 RSM065030Z N 55 650 30 50 TO247-4 600
3 RSM065060W N 29 650 60 79 TO247-3 600
4 RSM065060Z N 29 650 60 79 TO247-4 600
5 RSM120018Z N 105 1200 18 26 TO247-4 600
6 RSM120025W N 90 1200 25 34 TO247-3 600
7 RSM120025Z N 90 1200 25 34 TO247-4 600
8 RSM120040W N 68 1200 40 55 TO247-3 600
9 RSM120040Z N 68 1200 40 55 TO247-4 600
10 RSM120075W N 33 1200 75 95 TO247-3 600
11 RSM120075Z N 33 1200 75 95 TO247-4 600
12 RSM120080W N 36 1200 80 98 TO247-3 600
13 RSM120080Z N 36 1200 80 98 TO247-4 600
14 RSM120160W N 18 1200 160 196 TO247-3 600
15 RSM120160Z N 18 1200 160 196 TO247-4 600
16 RSM1701K0W N 5 1700 1000 1300 TO247-3 600
17 RSM1701K0Z N 5 1700 1000 1300 TO247-4 600
18 RSM170045W N 72 1700 45 70 TO247-3 600
19 RSM170045Z N 72 1700 45 70 TO247-4 600
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

High Power Silicon Carbide MOSFET Based On The National Military Standard Production Line

Product Description:

Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) is a type of power semiconductor device made of silicon carbide material, which is ideal for high-voltage and high-power applications. These Silicon Carbide MOSFETs are widely used in solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply and charging pile, etc. due to its low on-resistance and excellent switching performance. They are designed to provide superior performance, robustness and reliability in the most demanding environments. Moreover, the Silicon Carbide MOSFETs feature fast switching speed, low gate charge, temperature independent switching characteristics, low power loss, and wide operation temperature range.

 

Technical Parameters:

Parameter Value
Power High Power
Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Product name Silicon Carbide MOSFET
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Device Type MOSFET
Frequency High Frequency
Efficiency High Efficiency
Material Silicon Carbide
Type N
Resistance Low On Resistance
 

Applications:

REASUNOS Silicon Carbide MOSFET (SiC MOSFETs) is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes silicon carbide as the semiconductor material. It is designed to be used in high-frequency and high-efficiency applications, such as photovoltaic inverters, automotive power modules, and industrial motor drives. The SiC Field Effect Transistor is capable of handling high power and providing high efficiency due to its excellent thermal and electrical properties. Furthermore, it has a low on-resistance and a high switching frequency, which makes it a suitable component for power conversion applications.

REASUNOS Silicon Carbide MOSFET is available with a minimum order quantity of 600 and is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The product is offered with a delivery time of 2-30 days, depending on the total quantity. Moreover, the payment terms are 100% T/T in Advance (EXW) and the supply ability is 5KK/month. The device type is N-type with a high frequency and a high power.

 

Support and Services:

Silicon Carbide MOSFET Technical Support and Service

We provide technical support and service for our Silicon Carbide MOSFET products. Our knowledgeable team is on hand to answer any questions you may have about our products and provide you with the information you need to make an informed purchase decision.

Our technical support staff will help you troubleshoot any issues you may have with our products, and our dedicated customer service team is there to address any questions or concerns you may have about our products and services.

We strive to provide you with the best possible service, and are committed to making sure you are satisfied with our products and services.

 

Packing and Shipping:

The packaging and shipping of Silicon Carbide MOSFET includes:

  • Bubble wrap
  • Plastic wrap
  • Boxed
  • Insulated box
  • Labeled
  • Insured
  • Tracking number
 

FAQ:

Q1: What is the brand name of Silicon Carbide MOSFET?

A1: The brand name is REASUNOS.

Q2: Where is Silicon Carbide MOSFET manufactured?

A2: Silicon Carbide MOSFET is manufactured from Guangdong, China.

Q3: What is the minimum order quantity for Silicon Carbide MOSFET?

A3: The minimum order quantity is 600.

Q4: What is the delivery time of Silicon Carbide MOSFET?

A4: The delivery time is 2-30 days, depending on the total quantity.

Q5: What are the payment terms for Silicon Carbide MOSFET?

A5: The payment terms are 100% T/T in advance (EXW).