Industrial SiC Carbide Mosfet Switching Frequency Durable Heatproof
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Minimum Order Quantity | 600 |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
Contact me for free samples and coupons.
Whatsapp:0086 18588475571
Wechat: 0086 18588475571
Skype: sales10@aixton.com
If you have any concern, we provide 24-hour online help.
xEfficiency | High Efficiency | Material | Silicon Carbide |
---|---|---|---|
Device Type | MOSFET | Resistance | Low On Resistance |
Power | High Power | Type | N |
Product Name | Silicon Carbide MOSFET | Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
High Light | Industrial Si Carbide Mosfet,Si Carbide Mosfet Durable,Heatproof Sic Mosfet Switching Frequency |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
High Frequency Silicon Carbide MOSFET Device for Industrial Applications
Product Description:
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are advanced power semiconductors which provide high power and high frequency capabilities for a variety of applications, including solar inverters, high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power supplies, and charging piles. SiC MOSFETs possess high power efficiency, low switching losses, low gate charge, low on-state resistance, and superior thermal and frequency characteristics when compared to traditional silicon-based MOSFETs.
SiC MOSFETs are manufactured based on the national military standard production line, ensuring process stability and reliable quality. These power semiconductors are capable of withstanding high voltages while providing excellent performance and reliability. Moreover, SiC MOSFETs offer improved thermal performance and higher frequency operation when compared to conventional silicon devices.
SiC MOSFETs are capable of operating at high frequencies and high temperatures, making them suitable for a wide range of applications. They are ideal for high power operations, as they offer superior power efficiency, low switching losses, and low on-state resistance. Additionally, SiC MOSFETs are capable of withstanding high voltages and are highly reliable due to their production process based on the national military standard.
Technical Parameters:
Property | Description |
---|---|
Product Name | Silicon Carbide MOSFET |
Advantages | Based on the national military standard production line, the process is stable and the quality is reliable |
Type | N |
Application | Solar Inverter, High-Voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. |
Power | High Power |
Resistance | Low On Resistance |
Efficiency | High Efficiency |
Device Type | MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) |
Frequency | High Frequency |
Material | Silicon Carbide |
Applications:
Silicon Carbide MOSFET from REASUNOS is a metal oxide semiconductor field effect transistor based on silicon carbide, featuring high power, low on resistance, and wide range of applications. This Silicon Carbide Field Effect Transistor offers a perfect combination of high efficiency, high switching frequency, and low on-resistance for various applications such as solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, charging pile and other applications. It has a minimum order quantity of 600, and the price is confirmed based on product. It is packed in dustproof, waterproof, and anti-static tubular packaging, which is placed inside a cardboard box in cartons. Delivery time is usually within 2-30 days depending on the total quantity. Payment terms are 100% T/T in advance (EXW). This Silicon Carbide MOSFET has a supply ability of 5KK/month.
Support and Services:
Silicon Carbide MOSFET products come with a full suite of technical support and services, including:
- Technical Assistance
- Product Selection Assistance
- Component Testing and Qualification
- Design and Application Support
- Software Updates
- Firmware Updates
- Field Service
- Training
- Troubleshooting
- RMA/Return Services
Packing and Shipping:
Silicon Carbide MOSFET is packaged in an ESD-safe bag and shipped in an anti-static box. The box is labeled with the required product information, such as product name, order number, and purchase date. The box also contains a warning label indicating that the product should be handled with care. The box is then sealed with a tamper-evident seal.
FAQ:
A1: REASUNOS Silicon Carbide MOSFET is a transistor that uses silicon carbide as the semiconductor material. It is used in power electronics and automotive applications due to its high switching frequency, low on-resistance, and excellent thermal performance.
A2: The minimum order quantity for REASUNOS Silicon Carbide MOSFET is 600.
A3: The price for REASUNOS Silicon Carbide MOSFET varies based on the product. Please contact us for a quote.
A4: The delivery time for REASUNOS Silicon Carbide MOSFET is 2-30 days, depending on the total quantity.
A5: The payment terms for REASUNOS Silicon Carbide MOSFET are 100% T/T in advance (EXW).