Metal Practical High Voltage SiC Mosfet , N Type Silicon Carbide Semiconductor
Place of Origin | Guangdong, CN |
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Brand Name | REASUNOS |
Minimum Order Quantity | 600 |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xAdvantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable | Power | High Power |
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Type | N | Resistance | Low On Resistance |
Product Name | Silicon Carbide MOSFET | Efficiency | High Efficiency |
Frequency | High Frequency | Device Type | MOSFET |
High Light | Metal High Voltage Sic Mosfet,Practical High Voltage Sic Mosfet,N Type Silicon Carbide Semiconductor |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Product Description:
Silicon Carbide MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that has been developed to optimize the performance of high-frequency and high-efficiency electrical applications. This Silicon Carbide MOSFET features an N-type channel and is ideal for switching and amplifying electrical signals. It is formed by combining a silicon carbide metal oxide semiconductor with a metal oxide semiconductor field effect transistor, which makes it more robust and more efficient than traditional MOSFETs. Silicon Carbide MOSFETs are becoming increasingly popular due to their higher frequency and efficiency compared to other types of MOSFETs.
Technical Parameters:
Parameter | Description |
---|---|
Resistance | Low On Resistance |
Frequency | High Frequency |
Material | Silicon Carbide |
Power | High Power |
Type | N Type |
Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
Efficiency | High Efficiency |
Product name | Silicon Carbide MOSFET |
Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
Device Type | MOSFET |
Applications:
The REASUNOS brand Silicon Carbide MOSFETs is a field effect transistor (FET) based on Silicon Carbide (SiC) materials. It has a low on resistance, and is capable of operating at very high frequencies. It is produced by a national military standard production line, ensuring a stable process and reliable quality. It is an excellent choice for high-power, high-frequency applications and has many advantages compared to traditional MOSFETs.
The REASUNOS Silicon Carbide MOSFETs have a minimum order quantity of 600, and pricing is determined on a product-by-product basis. They are packed in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days, depending on the total quantity. Payment terms are 100% T/T in Advance (EXW). The supply ability is 5KK/month.
The REASUNOS Silicon Carbide MOSFETs are suitable for a wide range of applications, such as in automotive, industrial, medical, and consumer electronics. Its high frequency performance and low on resistance make it an ideal choice for power management applications. It is also suitable for high-frequency switching systems, as well as high-power and high-voltage applications.
Support and Services:
We provide technical support and services for Silicon Carbide MOSFET. Our support team is composed of experienced engineers who are familiar with the product and can provide you with the best support and service.
Our technical support includes:
- Providing technical advice on Silicon Carbide MOSFET product.
- Troubleshooting and diagnostics.
- Repair and maintenance.
- Software updates.
- Product training.
For any questions, please contact our support team. We are here to help you make the most of your Silicon Carbide MOSFET product.
Packing and Shipping:
Silicon Carbide MOSFET Packaging and Shipping:
The Silicon Carbide MOSFET is securely packaged for shipment to ensure that it arrives safely with its full functionality. Special attention is given to fragile components such as the gate dielectric. The product is sealed in an antistatic bag and placed in a protective box, surrounded by foam padding or other cushioning materials. The box is then secured and placed in an outer shipping container for added protection. Finally, the shipment is labeled with the appropriate shipping address and is ready for delivery.