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N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
| Place of Origin | Guangdong, CN |
|---|---|
| Brand Name | REASUNOS |
| Minimum Order Quantity | 600 |
| Price | Confirm price based on product |
| Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
| Delivery Time | 2-30 days (Depends on Total Quantity) |
| Payment Terms | 100% T/T in Advance(EXW) |
| Supply Ability | 5KK/month |
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xProduct Details
| Product Name | Silicon Carbide MOSFET | Efficiency | High Efficiency |
|---|---|---|---|
| Resistance | Low On Resistance | Material | Silicon Carbide |
| Type | N | Frequency | High Frequency |
| Power | High Power | Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Highlight | N Type Sic Power Mosfet,1200V Sic Power Mosfet,Metal Oxide Silicon Field Effect Transistor |
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| No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
| 2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
| 3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
| 4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
| 5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
| 6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
| 7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
| 8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
| 9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
| 10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
| 11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
| 12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
| 13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
| 14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
| 15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
| 16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
| 17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
| 18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
| 19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Product Description
Product Description:
Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This device uses the most advanced silicon carbide technology to greatly reduce conduction loss, switching loss and gate charge, making it the ideal choice for high-power, high-frequency applications. With its low on-resistance and high switching frequency, SiC MOSFET provides businesses and consumers with the highest power efficiency, reliability and long life-span.
SiC MOSFET features a unique three-dimensional structure, providing a high voltage tolerance of up to 1200V, a fast switching speed, and a wide operating temperature range. This makes it the perfect choice for a wide range of applications, from automotive to industrial, from consumer electronics to renewable energy. It also offers excellent thermal performance, with a low RDS(on) value and low gate charge. This provides businesses and consumers with the lowest possible operating costs and the highest levels of reliability.
SiC MOSFET is an ideal choice for a wide range of demanding applications, from automotive to industrial, from consumer electronics to renewable energy. With its high power, low on resistance, and high frequency, SiC MOSFET provides businesses and consumers with the highest power efficiency, reliability and long life-span.
Technical Parameters:
| Parameters | Values |
|---|---|
| Frequency | High Frequency |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Efficiency | High Efficiency |
| Power | High Power |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Resistance | Low On Resistance |
| Device Type | MOSFET |
| Material | Silicon Carbide |
| Type | N |
| Product name | Silicon Carbide MOSFET |
| Keywords | Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor, SiC MOSFETs, SiC Field Effect Transistor |
Applications:
REASUNOS Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are perfect for high-efficiency, high-power applications. They are capable of handling high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power supplies, and charging piles. With their high power and high efficiency, they are ideal for solar inverters, motor drivers, and other high-efficiency applications. Their MOSFET type is N, which is capable of handling more power and delivering higher efficiency. They are packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Their minimum order quantity is 600, and their supply ability is 5KK/month. Their delivery time is 2-30 days, depending on the total quantity. Payment terms are 100% T/T in Advance(EXW), and the price is to be confirmed based on the product.
Support and Services:
Silicon Carbide MOSFET provides technical support and services to ensure a smooth transition and operation of the product. Technical support includes installation guidance, product application instructions, and troubleshooting. Service includes but not limited to online and telephone support, warranty support, and maintenance and repair services.
Packing and Shipping:
Silicon Carbide MOSFET Packaging and Shipping:
- Product is packaged in a moisture-proof and static-proof container.
- Product is then wrapped in a protective foam cushion.
- Product is then placed in an insulated shipping box with sufficient cushioning material.
- Product is then shipped by an insured carrier, such as FedEx or UPS.
FAQ:
Q&A
Q1: What is the brand name of Silicon Carbide MOSFET?
A1: The brand name is REASUNOS.
Q2: Where is the product sourced from?
A2: The product is sourced from Guangdong, China.
Q3: What is the minimum order quantity?
A3: The minimum order quantity is 600.
Q4: What is the price for the product?
A4: The price of the product will be confirmed based on the product.
Q5: What is the packaging for the product?
A5: The product is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
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