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Multi Function Low Voltage MOSFET High Efficiency For Converter

  • Multi Function Low Voltage MOSFET High Efficiency For Converter
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. EAS Capability High EAS Capability
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Product Name Low Voltage MOSFET Structure Process Trench/SGT
Efficiency High Efficiency And Reliable Power Consumption Low Power Loss
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Multi Function Low Voltage MOSFET

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Low Voltage MOSFET High Efficiency

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Converter Low Vth Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Voltage MOSFET with Breakthrough FOM Optimization and Reliable SGT Process Advantages

Product Description:

Low Voltage MOSFET is a kind of low threshold voltage MOSFET which is designed with a low VGS and low gate voltage. It also has a high EAS capability and small RSP, which make it suitable for both series and parallel configuration. Furthermore, it has low power loss, high efficiency and reliable performance. It can be widely applied in wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, synchronous rectification and other electronic devices.

 

Technical Parameters:

Parameter Description
Product Name Low Voltage MOSFET
Low Threshold Voltage Low threshold voltage MOSFET
Low Gate Voltage Low gate voltage MOSFET
Resistance Low Rds(ON)
Efficiency High efficiency and reliable
Power Consumption Low power loss
Structure process Trench/SGT
Trench process Advantages Smaller RSP, both series and parallel configurations can be freely combined and utilized.
Trench process Application Wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, synchronous rectification.
SGT process Advantages Breakthrough FOM optimization, covering more application.
SGT process Application Motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification.
EAS Capability High EAS capability
 

Applications:

REASUNOS, a leading low voltage MOSFET provider from Guangdong, China, presents their latest SGT Low Voltage MOSFET and Low Voltage Transistor, featuring the lowest voltage fet in the market. Customers can confirm price based on product. The product comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days (depending on the total quantity), payment terms are 100% T/T in advance (EXW), and the monthly supply ability is 5KK. It has a low Rds(ON) resistance and breakthrough FOM optimization, covering more applications, such as motor driver, 5G base station, energy storage, high-frequency switch, and synchronous rectification. Additionally, the trench process offers smaller RSP and both series and parallel configurations can be freely combined and utilized for wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, and synchronous rectification.

 

Support and Services:

We offer technical support and services for Low Voltage MOSFET products. Our team of skilled engineers and technicians provide a range of services, including:

  • Design and prototyping
  • Testing and troubleshooting
  • Assembly and integration
  • Maintenance and repair services

We also provide a comprehensive range of resources and tools to help you make the most of our Low Voltage MOSFET products, including:

  • Detailed product specifications
  • Technical guides and tutorials
  • Firmware and software updates
  • FAQs and troubleshooting tips

For more information on our Low Voltage MOSFET technical support and services, please contact us.

 

Packing and Shipping:

Low Voltage MOSFET Packaging and Shipping:

The Low Voltage MOSFETs should be packaged in an anti-static bag. They should be placed in a cardboard box with a cushioning material such as air-filled bubble wrap to ensure that the products are not damaged during shipping. The package should be sealed with tape and labeled with the product’s name and address.

The Low Voltage MOSFETs should be shipped with a reputable carrier and tracked. The shipping company should be notified of the value of the products being shipped and the appropriate insurance coverage should be taken out for the full value of the shipment.

 

FAQ:

Q1: What is the brand name of this Low Voltage MOSFET?
A1: The brand name of this Low Voltage MOSFET is REASUNOS.
Q2: Where does this Low Voltage MOSFET come from?
A2: This Low Voltage MOSFET comes from Guangdong, China.
Q3: What is the price of this Low Voltage MOSFET?
A3: The price of this Low Voltage MOSFET is Confirm price based on product.
Q4: What kind of packaging does this Low Voltage MOSFET come in?
A4: This Low Voltage MOSFET comes in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: How long does it take to deliver this Low Voltage MOSFET?
A5: It takes 2-30 days to deliver this Low Voltage MOSFET (depending on the total quantity).
Tags:

N Channel Mosfet Low Threshold Voltage

Stable Low Power P Channel Mosfet

Base Station Low Voltage MOSFET