Energy Storage Low Voltage MOSFET Practical N Channel High EAS Capability

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
EAS Capability High EAS Capability Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Structure Process Trench/SGT SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Efficiency High Efficiency And Reliable Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
Resistance Low Rds(ON) Power Consumption Low Power Loss
Highlight

Energy Storage Low Voltage MOSFET

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Low Voltage MOSFET Practical

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Low Gate Voltage N Channel Mosfet

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RS2301E P -2.3 -20 70 110 SOT-23 3000
2 RS3415E P -4 -20 33 50 SOT-23 3000
3 RS2302E N 2.1 20 32 45 SOT-23 3000
4 RS2300E N 4.5 20 21 32 SOT-23 3000
5 RS2N7002E N 0.34 60 1300 5000 SOT-23 3000
6 RS20N90D N 90 20 3.7 5 TO-252 2500
7 RS3401E P -4.2 -30 50 65 SOT-23 3000
8 RS4435 P -10 -30 15 20 SOP-8 4000
9 RS3400E N 5.8 30 27 35 SOT-23 3000
10 RS30N30K N 30 30 5.8 9 DFN3*3 5000
11 RS30N50K N 50 30 3.8 5.5 DFN3*3 5000
12 RS30N60D N 60 30 6.2 7.5 TO-252 2500
13 RS30N86D N 86 30 4.7 5.5 TO-252 2500
14 RS30N120G N 120 30 3 4 DFN5*6 5000
15 RS30N150D N 150 30 3 4 TO-252 2500
16 RS30N150T N 150 30 3 4 TO-220 1000
17 RS40N100G N 100 40 2.8 3.5 DFN5*6 5000
18 RS40N120D N 120 40 2.8 3.5 TO-252 2500
19 RS40N120T N 120 40 2.8 3.5 TO-220 1000
20 RS150N105T N 105 150 9.8 11 TO-220 1000
21 RS76N20T N 76 200 17 20 TO-220 1000
22 RS2310E N 3 60 70 105 SOT-23 3000
23 RS60N30D N 30 60 22 35 TO-252 2500
24 RS60N50D N 50 60 14 22 TO-252 2500
25 RS60N50T N 50 60 14 22 TO-220 1000
26 RS80N25W N 80 250 30 35 TO-247 600
27 RS630D N 9 200 250 300 TO-252 2500
28 RS630T N 9 200 250 300 TO-220 1000
29 RS640D N 18 200 120 150 TO-252 2500
30 RS640T N 18 200 120 150 TO-220 1000
31 RS40N130G N 130 40 1.45 1.75 DFN5*6 5000
32 RS40N180T N 180 40 1.6 2 TO-220 1000
33 RS60N130G N 130 60 2.1 2.5 DFN5*6 5000
34 RS60N200T N 200 60 2.5 3.2 TO-220 1000
35 RS85N140T N 140 85 4.5 5.3 TO-220 1000
36 RS85N140S N 140 85 4.5 5.3 TO-263 800
37 RS85N150T N 150 85 2.8 3.6 TO-220 1000
38 RS85N150S N 150 85 2.7 3.4 TO-263 800
39 RS100N78HT N 78 100 8.2 9.5 TO-220 1000
40 RS100N78T N 78 100 8.2 9.5 TO-220 1000
41 RS100N100T N 100 100 7 8.5 TO-220 1000
42 RS100N135T N 135 100 3.7 4.2 TO-220 1000
43 RS100N135HT N 135 100 3.7 4.2 TO-220 1000
44 RS100N135HS N 135 100 4.2 5 TO-263 800
45 RS100N180T N 180 100 3 3.8 TO-220 1000
46 RS100N180S N 180 100 2.9 3.6 TO-263 800
47 RS100N190T N 190 100 2.3 3 TO-220 1000
48 RS100N190S N 190 100 2.2 2.8 TO-263 800
49 RS110N200T N 200 110 3.4 4 TO-220 1000
50 RS110N200S N 200 110 3.4 4 TO-263 800
51 RS100N210S N 200 100 1.9 2.4 TO-263 800
52 RS100N210T N 210 100 1.9 2.4 TO-220 1000
53 RS100N300I N 300 100 1.7 2.2 TOLL 2000
54 RS100N60G N 60 100 7.5 8.5 DFN5*6 5000
55 RS100N60HG N 60 100 7.5 8.5 DFN5*6 5000
56 RS100N85G N 85 100 6 7.5 DFN5*6 5000
57 RS100N85HG N 85 100 6 7.5 DFN5*6 5000
58 RS100N125G N 125 100 4 4.6 DFN5*6 5000
59 RS100N125HG N 125 100 4 4.6 DFN5*6 5000
60 RS100N150HG N 150 100 3.5 4.2 DFN5*6 5000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Low Rds(ON) Trench Process MOSFET for DC/DC Converter with Breakthrough FOM Optimization

Product Description:

Low Voltage MOSFET is a kind of transistor which is specially designed to meet the needs of modern low voltage electronic applications. Low Voltage MOSFET features a low gate voltage and low threshold voltage, making it ideal for use in applications that require low voltage operation. This low voltage transistor has an extremely high EAS capability, a low Rds(ON), and low power loss, making it suitable for a wide range of applications. Low Voltage MOSFET can be used for Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification, Wireless Charging, Fast Charging, and DC/DC Converter. Thanks to the low voltage and low power loss characteristics, Low Voltage MOSFET is an excellent choice for modern low voltage electronic applications.

 

Technical Parameters:

Attributes Description
Product Name Low Voltage MOSFET
EAS Capability High EAS Capability
Structure Process Trench/SGT
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification.
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
Resistance Low Rds(ON)
Efficiency High Efficiency And Reliable
Power Consumption Low Power Loss
 

Applications:

REASUNOS Low Voltage MOSFET is a highly efficient and reliable product with breakthrough FOM optimization and covering more application. It is also designed with a smaller RSP, allowing both series and parallel configurations to be freely combined and utilized. With its low gate voltage and low VGS, it is well suited for a variety of applications in automotive, industrial and consumer electronics. Its dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons, ensures safe delivery. It is available in different quantities and the price can be confirmed based on the product. The delivery time is usually 2-30 days, depending on the total quantity, and payment is accepted through 100% T/T in Advance(EXW). The manufacturing capacity of this product is 5KK/month.

 

Support and Services:

Low Voltage MOSFET Technical Support and Service

We provide technical support and service for Low Voltage MOSFET products. Our technical support team can help you with installation, maintenance, and diagnostics. We also offer troubleshooting and repair services for any issues you may have with your Low Voltage MOSFET products.

Our technical team is available to answer any questions you may have on how to use and maintain your Low Voltage MOSFET products. We can also provide tips and advice on making your Low Voltage MOSFET products as efficient as possible.

We offer a range of services to help you get the most out of your Low Voltage MOSFET products. Our team can help you optimize your products' performance, diagnose and fix any issues you may have, and provide technical advice and support.

Our team of experienced technicians is here to help you get the most out of your Low Voltage MOSFET products. We are committed to providing the best possible service for our customers.

 

Packing and Shipping:

Low Voltage MOSFETs are packaged and shipped in a secure and durable cardboard box. Inside the box, the MOSFETs are enclosed in anti-static foam and bubble wrap to protect them from any potential damage during transit. The box is then sealed with heavy-duty tape to ensure that it remains secure during shipping.

 

FAQ:

Q1: What is the Brand Name of Low Voltage MOSFET?

A1: The Brand Name of Low Voltage MOSFET is REASUNOS.

Q2: Where is the place of origin of Low Voltage MOSFET?

A2: The place of origin of Low Voltage MOSFET is Guangdong, CN.

Q3: What is the price of Low Voltage MOSFET?

A3: The price of Low Voltage MOSFET is Confirm price based on product.

Q4: How is Low Voltage MOSFET packaged?

A4: Low Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Q5: What is the delivery time of Low Voltage MOSFET?

A5: The delivery time of Low Voltage MOSFET is 2-30 days (Depends on Total Quantity).