N Type Super Junction MOSFET Multipurpose For Switching Power Supply
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |

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xApplication | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc | Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
---|---|---|---|
EMI Margin | Large EMI Margin | Internal Resistance | Ultra Small Internal Resistance |
Package | Ultra Small Package | Device Type | Power Discrete Devices |
Type | N | Capacitance | Ultra-low Junction Capacitance |
Highlight | N Type Super Junction MOSFET,Super Junction MOSFET Multipurpose,Power Supply N Superjunction Diode |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSE60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
2 | RSE60R190S | N | 17.6 | 600 | 165 | 190 | TO-263 | 800 | |
3 | RSE60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
4 | RSF60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
5 | RSF60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
6 | RS60R130F | N | 30 | 600 | 110 | 130 | TO-220F | 1000 | |
7 | RS60R130W | N | 30 | 600 | 110 | 130 | TO247-3 | 600 | |
8 | RSF60R099F | N | 31 | 600 | 86 | 99 | TO-220F | 1000 | |
9 | RSF60R099W | N | 31 | 600 | 86 | 99 | TO247-3 | 600 | |
10 | RSF60R070W | N | 45 | 600 | 61 | 70 | TO247-3 | 600 | |
11 | RSF60R041W | N | 70 | 600 | 35 | 41 | TO247-3 | 600 | |
12 | RSF60R070F | N | 48 | 600 | 58 | 68 | TO-220F | 1000 | |
13 | RSF60R026W | N | 100 | 600 | 20 | 26 | TO247-3 | 600 | |
14 | RSU4N65D | N | 4 | 650 | 880 | 1000 | TO-252 | 2500 | |
15 | RSU7N65D | N | 7 | 650 | 560 | 650 | TO-252 | 2500 | |
16 | RSU7N65F | N | 7 | 650 | 560 | 650 | TO-220F | 1000 | |
17 | RS65R600D | N | 7.3 | 650 | 520 | 600 | TO-252 | 2500 | |
18 | RS65R600F | N | 7.3 | 650 | 520 | 600 | TO-220F | 1000 | |
19 | RSE65R550D | N | 7.6 | 650 | 480 | 550 | TO-252 | 2500 | |
20 | RSU12N65F | N | 12 | 650 | 380 | 420 | TO-220F | 1000 | |
21 | RS65R380D | N | 11 | 650 | 340 | 380 | TO-252 | 2500 | |
22 | RS65R380F | N | 11 | 650 | 340 | 380 | TO-220F | 1000 | |
23 | RS65R280D | N | 15 | 650 | 240 | 280 | TO-252 | 2500 | |
24 | RS65R280F | N | 15 | 650 | 240 | 280 | TO-220F | 1000 | |
25 | RSE65R210F | N | 16.8 | 650 | 185 | 210 | TO-220F | 1000 | |
26 | RS65R190F | N | 20 | 650 | 160 | 190 | TO-220F | 1000 | |
27 | RS65R190S | N | 20 | 650 | 160 | 190 | TO-263 | 800 | |
28 | RS65R190T | N | 20 | 650 | 160 | 190 | TO-220 | 1000 | |
29 | RSF65R190T | N | 20 | 650 | 170 | 190 | TO-220 | 1000 | |
30 | RSE65R180F | N | 22 | 650 | 150 | 180 | TO-220F | 1000 | |
31 | RSE65R165F | N | 20.4 | 650 | 145 | 165 | TO-220F | 1000 | |
32 | RSF65R130F | N | 26 | 650 | 115 | 130 | TO-220F | 1000 | |
33 | RSE70R600F | N | 7.3 | 700 | 520 | 600 | TO-220F | 1000 | |
34 | RSE70R420F | N | 11 | 700 | 365 | 420 | TO-220F | 1000 | |
35 | RSE70R360F | N | 12 | 700 | 315 | 360 | TO-220F | 1000 | |
36 | RSE80R850D | N | 7 | 800 | 740 | 850 | TO-252 | 2500 | |
37 | RS80R500F | N | 9 | 800 | 420 | 500 | TO-220F | 1000 | |
38 | RSE80R380F | N | 13 | 800 | 330 | 380 | TO-220F | 1000 | |
39 | RSE80R250F | N | 18 | 800 | 220 | 250 | TO-220F | 1000 |
Ultra-Low Junction Capacitance N Superjunction Diode Power Discrete Devices
Product Description:
Super Junction MOSFET, also known as Super Junction Metal Oxide Field Effect Transistor, is a type of power discrete device with a ultra small package. It features with ultra small internal resistance, ultra-low junction capacitance and large EMI margin, making it a ideal choice for applications such as power conversion, power management, high frequency switching, amplifiers, and motor control. It is also known as Super Junction Metal Oxide Semiconductor Field Effect Transistor.
Technical Parameters:
Property | Value |
---|---|
Device Type | Power Discrete Devices |
Type | N |
Product Name | Super Junction MOSFET/SJ MOSTET |
Package | Ultra Small Package |
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
Capacitance | Ultra-low Junction Capacitance |
Internal Resistance | Ultra Small Internal Resistance |
EMI Margin | Large EMI Margin |
Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Applications:
REASUNOS Super Junction MOSFET (SJ MOSFET) is a metal oxide semiconductor field effect transistor (MOSFET) with a large EMI margin and ultra small internal resistance. It is a type N device and has wide applications in LED driver, PFC circuit, switching power supply, UPS of continuous power supply system and new energy power equipment, etc.
REASUNOS Super Junction MOSFET is a high-quality product with reliable performance and stable operation. It is packed with dustproof, waterproof and anti-static tubular packaging, placed inside a cardboard box in cartons. The price of this product is confirmed according to the product and can be delivered 2-30 days after the payment is received. REASUNOS can provide 5KK/month of the Super Junction MOSFET.
Support and Services:
We offer technical support and service for the Super Junction MOSFET. Our experienced professionals are available to provide customers with the most reliable and efficient solutions for their applications. We provide these services through our website, telephone, and email.
- Design and simulation support for product selection, applications, and troubleshooting
- Product and application-specific documentation, including datasheets and application notes
- On-site technical support
- Design and fabrication of custom solutions
- Repair and maintenance services
- On-site installation and commissioning
Packing and Shipping:
Our Super Junction MOSFETs are packaged and shipped in high-quality containers that protect the product from environmental damage during transit. The containers are designed to ensure that the products arrive safely and securely.
The packaging process includes the following steps:
- The MOSFETs are individually wrapped in antistatic material.
- The wrapped MOSFETs are placed in containers with bubble wrap for additional protection.
- The containers are labeled with the product information and shipping address.
- The containers are placed in larger shipping boxes with additional padding.
- The shipping boxes are sealed and labeled with the shipping address.
All packages are shipped with a tracking number, so customers can monitor the progress of their shipment.
FAQ:
Q1:What is Super Junction MOSFET?
A1:Super Junction MOSFET is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that features a structure with multiple connected junctions to reduce on-resistance and increase current handling capabilities.
Q2: Where is REASUNOS Super Junction MOSFET made?
A2:REASUNOS Super Junction MOSFET is made in Guangdong, China.
Q3: How much is REASUNOS Super Junction MOSFET?
A3:The price of REASUNOS Super Junction MOSFET is Confirm price based on product.
Q4: How is REASUNOS Super Junction MOSFET packaged?
A4:REASUNOS Super Junction MOSFET is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: How long does it take to deliver REASUNOS Super Junction MOSFET?
A5:It takes 2-30 days (Depends on Total Quantity) to deliver REASUNOS Super Junction MOSFET.