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Industrial Stable Super Junction Transistor , Heat Dissipation Discrete Mosfet

  • Industrial Stable Super Junction Transistor , Heat Dissipation Discrete Mosfet
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
EMI Margin Large EMI Margin Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc
Type N Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities
Package Ultra Small Package Capacitance Ultra-low Junction Capacitance
Device Type Power Discrete Devices Product Name Super Junction MOSFET/SJ MOSTET
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Industrial Super Junction Transistor

,

Stable Super Junction Transistor

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Heat Dissipation Discrete Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSE60R190F N 17.6 600 165 190 TO-220F 1000
2 RSE60R190S N 17.6 600 165 190 TO-263 800
3 RSE60R150F N 22 600 130 150 TO-220F 1000
4 RSF60R150F N 22 600 130 150 TO-220F 1000
5 RSF60R190F N 17.6 600 165 190 TO-220F 1000
6 RS60R130F N 30 600 110 130 TO-220F 1000
7 RS60R130W N 30 600 110 130 TO247-3 600
8 RSF60R099F N 31 600 86 99 TO-220F 1000
9 RSF60R099W N 31 600 86 99 TO247-3 600
10 RSF60R070W N 45 600 61 70 TO247-3 600
11 RSF60R041W N 70 600 35 41 TO247-3 600
12 RSF60R070F N 48 600 58 68 TO-220F 1000
13 RSF60R026W N 100 600 20 26 TO247-3 600
14 RSU4N65D N 4 650 880 1000 TO-252 2500
15 RSU7N65D N 7 650 560 650 TO-252 2500
16 RSU7N65F N 7 650 560 650 TO-220F 1000
17 RS65R600D N 7.3 650 520 600 TO-252 2500
18 RS65R600F N 7.3 650 520 600 TO-220F 1000
19 RSE65R550D N 7.6 650 480 550 TO-252 2500
20 RSU12N65F N 12 650 380 420 TO-220F 1000
21 RS65R380D N 11 650 340 380 TO-252 2500
22 RS65R380F N 11 650 340 380 TO-220F 1000
23 RS65R280D N 15 650 240 280 TO-252 2500
24 RS65R280F N 15 650 240 280 TO-220F 1000
25 RSE65R210F N 16.8 650 185 210 TO-220F 1000
26 RS65R190F N 20 650 160 190 TO-220F 1000
27 RS65R190S N 20 650 160 190 TO-263 800
28 RS65R190T N 20 650 160 190 TO-220 1000
29 RSF65R190T N 20 650 170 190 TO-220 1000
30 RSE65R180F N 22 650 150 180 TO-220F 1000
31 RSE65R165F N 20.4 650 145 165 TO-220F 1000
32 RSF65R130F N 26 650 115 130 TO-220F 1000
33 RSE70R600F N 7.3 700 520 600 TO-220F 1000
34 RSE70R420F N 11 700 365 420 TO-220F 1000
35 RSE70R360F N 12 700 315 360 TO-220F 1000
36 RSE80R850D N 7 800 740 850 TO-252 2500
37 RS80R500F N 9 800 420 500 TO-220F 1000
38 RSE80R380F N 13 800 330 380 TO-220F 1000
39 RSE80R250F N 18 800 220 250 TO-220F 1000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Ultra Small Internal Resistance Super Junction MOSFET/SJ MOSTET Power Discrete Devices

Product Description:

Super Junction Metal Oxide Semiconductor Transistor (sj mosfet) is a type of advanced Superjunction diode that is designed to offer better performance and features than conventional devices. This device has an Ultra Small Internal Resistance and is ideal for applications such as LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. The device also features an Ultra-low Junction Capacitance, which means that it can handle switching frequencies much higher than other types of transistors. Additionally, it has a Large EMI Margin, which means that it can effectively shield against EMI and surge currents. The Super Junction MOSFET is made using the Multi-layer Epitaxy Process, which is more efficient than the Trench Process and offers excellent anti-EMI and anti-surge capabilities.

 

Technical Parameters:

Product Name Super Junction MOSFET/SJ MOSTET
Capacitance Ultra-low Junction Capacitance
Internal Resistance Ultra Small Internal Resistance
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities
Package Ultra Small Package
EMI margin Large EMI Margin
Type N
Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc
Device Type Power Discrete Devices
 

Applications:

The Super Junction Metal Oxide Semiconductor Transistor (Si super junction MOSFET) produced by the renowned Chinese electronic company REASUNOS is a high-performance power discrete device that has been developed to meet the demand of modern day power applications. It is made of high quality materials and has been designed with the highest standards of safety and reliability. It is manufactured in Guangdong, China and is available at a competitive price.

The Si super junction MOSFET features a dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons, and is delivered within 2-30 days, depending on the total quantity. The payment terms are 100% T/T in Advance (EXW) and it has a 5KK/month supply ability. The product comes in an ultra small package and has a type N design with a low internal resistance.

The Super Junction MOSFET can be used in a variety of applications, such as LED drivers, PFC circuits, switching power supplies, UPS of continuous power supply systems, and new energy power equipment. This product is ideal for those who are looking for a reliable and efficient power solution for their device.

 

Support and Services:

Super Junction MOSFET Technical Support and Service

We provide comprehensive technical support and service for our Super Junction MOSFET products. Our team of experienced engineers specializes in helping customers find the right solution for their needs. Our services include:

  • Design assistance and consulting
  • Product selection and evaluation
  • Application troubleshooting and customization
  • Data sheet review
  • Product support and training

We are committed to providing our customers with the best possible experience, and our customer service team is available to answer questions and provide support.

 

Packing and Shipping:

Super Junction MOSFET packaging and shipping is handled with the utmost care to ensure your product arrives safely and on time. All products are inspected for quality control prior to packaging and shipping. Packaging materials such as bubble wrap, foam inserts, and other protective materials are used to ensure the product is secure during transit. All packages are shipped using reliable carriers and tracking numbers are provided to the customer for easy tracking.

 

FAQ:

Q1: What is Super Junction MOSFET?
A1: Super Junction MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) with an improved structure, which improves its performance and makes it suitable for high-power applications.
Q2: What brand is the Super Junction MOSFET?
A2: The Super Junction MOSFET is REASUNOS brand.
Q3: Where is the Super Junction MOSFET manufactured?
A3: The Super Junction MOSFET is manufactured in Guangdong, China.
Q4: What is the packaging of the Super Junction MOSFET?
A4: The Super Junction MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: What is the delivery time of the Super Junction MOSFET?
A5: The delivery time of the Super Junction MOSFET is 2-30 days, depending on the total quantity.
Tags:

Metal Oxide Super Junction Transistor

PFC Circuit Super Junction MOSFET

Power Supply Super Junction MOSFET