Stable Converter Silicon Carbide Transistor , UPS Power Supply SiC FETs
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Minimum Order Quantity | 600 |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xPower | High Power | Resistance | Low On Resistance |
---|---|---|---|
Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. | Device Type | MOSFET |
Product Name | Silicon Carbide MOSFET | Efficiency | High Efficiency |
Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable | Frequency | High Frequency |
High Light | Stable Silicon Carbide Transistor,Converter Silicon Carbide Transistor,UPS Power Supply SiC FETs |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Metal Oxide Semiconductor Field Effect Transistor For UPS Power Supply
Product Description:
The Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a type of N-channel device with a Silicon Carbide material. This device is designed for high frequency applications and offers excellent switching performance. The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is an advanced power device that combines the high performance of Silicon Carbide technology with the low resistance of a Metal-Oxide-Semiconductor structure. It is ideal for applications where high frequency switching and low on-resistance are needed.
The Silicon Carbide MOSFET provides superior switching performance with low conduction losses and low gate charge. It is ideal for high frequency applications such as DC-DC converters, DC-AC inverters, and motor drivers. It has an excellent temperature stability and offers superior current handling capabilities. The Silicon Carbide MOSFET is a reliable and robust device suitable for a wide range of applications.
Technical Parameters:
Product Name | Silicon Carbide MOSFET |
---|---|
Device Type | MOSFET |
Power | High Power |
Type | N |
Resistance | Low On Resistance |
Material | Silicon Carbide |
Advantages | Based on the national military standard production line, the process is stable and the quality is reliable. |
Frequency | High Frequency |
Efficiency | High Efficiency |
Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. |
Keywords | SiC Metal-Oxide-Semiconductor, SiC Field Effect Transistor, MOSFET Based on Silicon Carbide |
Applications:
Reasunos Silicon Carbide MOSFET is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) that offers high power, low on resistance and high efficiency. It is based on the national military standard production line, guaranteeing a stable process and reliable quality. This product comes from Guangdong, China, with a minimum order quantity of 600 units. The price of the product is subject to confirmation based on the total quantity. The packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month.
Support and Services:
Silicon Carbide MOSFET provides support and services to ensure customers experience the highest quality of product performance.
Technical support and services for Silicon Carbide MOSFET include:
- Design support and guidance
- Application and technical support
- Product testing and validation
- 24/7 online customer service
- On-site maintenance and repair
- Software and firmware updates
- Expert consultation and trouble shooting
Packing and Shipping:
Silicon Carbide MOSFET Packaging and Shipping:
- The product should be packaged in a static shielding bag to protect against electrostatic discharge.
- It should be stored in a dry and clean environment.
- It should be shipped in a box or container with the appropriate cushioning material to protect it from damage.
FAQ:
A1: Silicon Carbide MOSFET is a power semiconductor device made of Silicon Carbide. It is used in many applications, such as motor control, inverter, converter and power supply systems.
A2: The Brand Name of Silicon Carbide MOSFET is REASUNOS.
A3: The Place of Origin of Silicon Carbide MOSFET is Guangdong, China.
A4: The Minimum Order Quantity for Silicon Carbide MOSFET is 600 pieces.
A5: The Packaging Details for Silicon Carbide MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.