Alle Produkte
Hohe Effizienz Niedrigstromverlust Niedrigspannung MOSFET-Grench / SGT-Prozess
| Power consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Hohe Effizienz Niedriger Stromverlust Niedrigspannung MOSFET-Grench/SGT-Prozess
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Product name: | Low Voltage MOSFET |
| EAS capability: | High EAS Capability |
Hohe Effizienz Niedriger Stromverlust Niedrigspannung MOSFET-Grench/SGT-Prozess
| resistance: | Low Rds(ON) |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Hohe EAS-Kapazität Niedrige Rds ((ON) Trench-Prozess MOSFET Synchrone Berichtigung
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
MOSFET mit hoher EAS-Kapazität für drahtlose Ladung
| EAS capability: | High EAS Capability |
|---|---|
| Product name: | Low Voltage MOSFET |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Niedrigspannungs-MOSFET-Grench-Prozess, hocheffizienter Motorantrieb für 5G-Basisstation
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| resistance: | Low Rds(ON) |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Niedrigspannungs-MOSFET-Grench-Prozess, hocheffizienter Motorantrieb für 5G-Basisstation
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS capability: | High EAS Capability |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Niedrigspannungs-MOSFET-Grench-Prozess, hocheffizienter Motorantrieb für 5G-Basisstation
| Structure process: | Trench/SGT |
|---|---|
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Product name: | Low Voltage MOSFET |
Niedrigspannungs-MOSFET-Grench-Prozess, hocheffizienter Motorantrieb für 5G-Basisstation
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Power consumption: | Low Power Loss |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
Hochspannungs-MOSFET-Transistor Ultrahochspannungstechnologie
| Widerstand: | Niedriger Auf-Widerstand |
|---|---|
| Leckage: | Niedriges Durchsickern kann weniger als 1 µ A erreichen |
| Hochspg Mosfet-Anwendung: | LED-Fahrer, Adapter, industrielles Schaltnetzteil, Inverter usw. |