すべての製品
高効率 低電源損失 低電圧 MOSFET トレンチ / SGT プロセス
| Power consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
高効率 低電源損失 低電圧 MOSFET トレンチ/SGT プロセス
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Product name: | Low Voltage MOSFET |
| EAS capability: | High EAS Capability |
高効率 低電源損失 低電圧 MOSFET トレンチ/SGT プロセス
| resistance: | Low Rds(ON) |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
高EAS能力 低Rds ((ON) トレンチプロセス MOSFET 同期直直直
| Trench process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
ワイヤレス充電のための低電圧MOSFET
| EAS capability: | High EAS Capability |
|---|---|
| Product name: | Low Voltage MOSFET |
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
5Gベースステーションのための低電圧MOSFET トレンチプロセス高効率モータードライバー
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| resistance: | Low Rds(ON) |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
5Gベースステーションのための低電圧MOSFET トレンチプロセス高効率モータードライバー
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS capability: | High EAS Capability |
| SGT process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
5Gベースステーションのための低電圧MOSFET トレンチプロセス高効率モータードライバー
| Structure process: | Trench/SGT |
|---|---|
| SGT process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Product name: | Low Voltage MOSFET |
5Gベースステーションのための低電圧MOSFET トレンチプロセス高効率モータードライバー
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Power consumption: | Low Power Loss |
| Trench process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
高電圧MOSFETトランジスタ 超高電圧技術
| 抵抗: | 低いオン抵抗 |
|---|---|
| 漏れ: | 低い漏出は1つ以下のµ Aに達することができる |
| HV Mosfetの塗布: | LEDの運転者、アダプター、産業転換の電源、インバーター等 |