Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors

Place of Origin Guangdong, CN
Brand Name REASUNOS
Minimum Order Quantity 600
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Device Type MOSFET Material Silicon Carbide
Type N Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable Resistance Low On Resistance
Efficiency High Efficiency Product Name Silicon Carbide MOSFET
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Stable Sic Power Mosfet

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Converter Sic Power Mosfet

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ISO Silicon Carbide Sic Power Semiconductors

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSM065030W N 55 650 30 50 TO247-3 600
2 RSM065030Z N 55 650 30 50 TO247-4 600
3 RSM065060W N 29 650 60 79 TO247-3 600
4 RSM065060Z N 29 650 60 79 TO247-4 600
5 RSM120018Z N 105 1200 18 26 TO247-4 600
6 RSM120025W N 90 1200 25 34 TO247-3 600
7 RSM120025Z N 90 1200 25 34 TO247-4 600
8 RSM120040W N 68 1200 40 55 TO247-3 600
9 RSM120040Z N 68 1200 40 55 TO247-4 600
10 RSM120075W N 33 1200 75 95 TO247-3 600
11 RSM120075Z N 33 1200 75 95 TO247-4 600
12 RSM120080W N 36 1200 80 98 TO247-3 600
13 RSM120080Z N 36 1200 80 98 TO247-4 600
14 RSM120160W N 18 1200 160 196 TO247-3 600
15 RSM120160Z N 18 1200 160 196 TO247-4 600
16 RSM1701K0W N 5 1700 1000 1300 TO247-3 600
17 RSM1701K0Z N 5 1700 1000 1300 TO247-4 600
18 RSM170045W N 72 1700 45 70 TO247-3 600
19 RSM170045Z N 72 1700 45 70 TO247-4 600
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Product Description:

Silicon Carbide MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide and Metal Oxide Semiconductor Field Effect Transistor. They are designed to handle high power applications, with high efficiency, low resistance and high frequency. Silicon Carbide MOSFETs provide a wide range of advantages over conventional semiconductor devices, such as low power consumption, high temperature operation, high breakdown voltage, and low gate driving voltage. Moreover, these devices are highly reliable and offer excellent thermal and electrical properties, making them ideal for a variety of applications.

 

Technical Parameters:

Parameters Values
Power High Power
Device Type MOSFET
Efficiency High Efficiency
Resistance Low On Resistance
Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Material Silicon Carbide
Frequency High Frequency
Type N
Product name Silicon Carbide MOSFET
 

Applications:

Silicon Carbide MOSFETs – High Power and High Frequency Devices by REASUNOS

REASUNOS offers Silicon Carbide Field Effect Transistor (MOSFET) devices that are designed to meet the highest requirement of power and frequency. Made with silicon carbide material, these MOSFETs are highly durable and reliable in applications like solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply and charging pile.

These MOSFETs come with a minimum order quantity of 600 and the pricing is based on the product. Each device is carefully packed in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time for the order is 2-30 days depending on the total quantity. Payment terms are 100% T/T in Advance (EXW). The maximum supply capacity is 5KK/month.

 

Support and Services:

Silicon Carbide MOSFET has excellent technical support and service. Our technical support team is available 24/7 to answer any questions customers may have about our products. We also offer a comprehensive range of training courses for customers to help them get the most out of their products. In addition, our customer service team is available to provide assistance with any orders or issues customers may have.

 

Packing and Shipping:

Silicon Carbide MOSFET packaging and shipping:

Packaging: The Silicon Carbide MOSFETs are packaged in ESD (electrostatic discharge) compliant materials.

Shipping: The Silicon Carbide MOSFETs are shipped in accordance with global shipping standards to ensure safe and secure delivery.

 

FAQ:

Q1: What is the brand name of Silicon Carbide MOSFET?
A1: REASUNOS.
Q2: Where is Silicon Carbide MOSFET manufactured?
A2: Guangdong, China.
Q3: What is the minimum order quantity for Silicon Carbide MOSFET?
A3: 600.
Q4: How is Silicon Carbide MOSFET packaged?
A4: Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q5: How long will it take to receive an order of Silicon Carbide MOSFET?
A5: 2-30 days (Depends on Total Quantity).