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650V Silicon Carbide Power Mosfet Multifunctional Durable N Channel
| Place of Origin | Guangdong, CN |
|---|---|
| Brand Name | REASUNOS |
| Minimum Order Quantity | 600 |
| Price | Confirm price based on product |
| Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
| Delivery Time | 2-30 days (Depends on Total Quantity) |
| Payment Terms | 100% T/T in Advance(EXW) |
| Supply Ability | 5KK/month |
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xProduct Details
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. | Resistance | Low On Resistance |
|---|---|---|---|
| Efficiency | High Efficiency | Type | N |
| Material | Silicon Carbide | Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Product Name | Silicon Carbide MOSFET | Device Type | MOSFET |
| Highlight | 650V Silicon Carbide Power Mosfet,Silicon Carbide Power Mosfet Multifunctional,Durable Silicon N Channel Mosfet |
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| No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
| 2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
| 3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
| 4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
| 5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
| 6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
| 7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
| 8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
| 9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
| 10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
| 11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
| 12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
| 13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
| 14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
| 15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
| 16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
| 17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
| 18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
| 19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Product Description
Product Description:
The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, making it a reliable and stable product. This product is suitable for many applications such as switch mode power supplies, motor drives, and power converters. It has various advantages such as low conduction and switching losses, high frequency operation, low gate-charge, and high blocking voltage. Its high-power capability and high operating frequency make it suitable for many applications. In addition, its low gate-charge and high blocking voltage make it an excellent choice for many applications.
The SiC MOSFETs produced by our company is of high quality and reliability, making it the perfect choice for many applications. We have a wide range of products to fit different applications and requirements. Our products are designed to meet the highest standards and are produced in a safe and reliable manner. We strive to provide the best customer service and to ensure that our products meet all of our customers' needs.
Technical Parameters:
| Property | Value |
|---|---|
| Frequency | High Frequency |
| Resistance | Low On Resistance |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Type | N |
| Material | Silicon Carbide |
| Efficiency | High Efficiency |
| Device Type | MOSFET |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Power | High Power |
| Product Name | Silicon Carbide MOSFET |
| Keywords | Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor, SiC Field Effect Transistor, Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor |
Applications:
REASUNOS Silicon Carbide MOSFET is suitable for multiple applications and scenarios. It is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide. It has high power, high frequency, and low on resistance, making it a great choice for industrial, automotive, and consumer applications.
The REASUNOS Silicon Carbide MOSFET is a high performance device with superior temperature, voltage, and current capabilities, allowing for high frequency operation. It is designed to provide excellent reliability, and low on resistance, making it ideal for high power applications. Its rugged construction and low on resistance make it suitable for high voltage operation, providing a reliable power solution.
REASUNOS Silicon Carbide MOSFET is an ideal solution for a wide range of applications including automotive, consumer, and industrial electronics. It is available in a variety of packages and configurations, making it suitable for a wide range of applications. It is made from high quality silicon carbide and its superior performance and durability make it perfect for applications such as automotive, consumer, and industrial electronics.
The REASUNOS Silicon Carbide MOSFET is available with a minimum order quantity of 600, and comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The price of this device is based on the product. Delivery time is estimated to be between 2-30 days, depending on the total quantity. Payment is to be made in full by T/T in advance (EXW). The supply ability of REASUNOS Silicon Carbide MOSFET is 5KK/month.
Support and Services:
Silicon Carbide MOSFET Technical Support and Service
We offer technical support and service for our Silicon Carbide MOSFET products. Our experienced engineers are available to help customers with product selection, design advice, technical support and troubleshooting.
Our technical team is experienced in all aspects of Silicon Carbide MOSFET operation and design. We provide circuit simulation, thermal analysis, and more. Our engineers are also available to assist with product testing and validation.
We offer comprehensive training and support for our Silicon Carbide MOSFET products. Our training sessions provide customers with the knowledge and skills they need to use and maintain their Silicon Carbide MOSFET products.
We are committed to providing customers with the highest level of technical support and service. Our team is available via phone, email, and live chat to answer all of your questions and provide prompt service.
Packing and Shipping:
Silicon Carbide MOSFET Packaging and Shipping:
- Packaging: The Silicon Carbide MOSFET will be packed in an anti-static bag, which is then sealed in an electrostatic-dissipative bag.
- Shipping: The Silicon Carbide MOSFET will be shipped in a secure box with appropriate padding to protect against any damage during transit.
FAQ:
The Silicon Carbide MOSFET is brand REASUNOS.
The Silicon Carbide MOSFET is made in Guangdong, China.
The minimum order quantity of the Silicon Carbide MOSFET is 600.
The price of the Silicon Carbide MOSFET is determined by the product.
The Silicon Carbide MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
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