All Products
Keywords [ converter high power mosfet ] match 116 Products.
High EAS Capability Low Voltage MOSFET for Wireless Charging
| EAS Capability: | High EAS Capability |
|---|---|
| Product Name: | Low Voltage MOSFET |
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS Capability: | High EAS Capability |
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Industrial SiC Carbide Mosfet Switching Frequency Durable Heatproof
| Efficiency: | High Efficiency |
|---|---|
| Material: | Silicon Carbide |
| Device Type: | MOSFET |
Practical Silicon Carbide MOSFET Stable High Frequency Military Standard
| Material: | Silicon Carbide |
|---|---|
| Frequency: | High Frequency |
| Device Type: | MOSFET |
Stable Ultra Low Voltage MOSFET Multiscene For Fast Charging
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
| Power Consumption: | Low Power Loss |
Motor Driver Low Voltage Fet Stable For High Frequency Switch
| Efficiency: | High Efficiency And Reliable |
|---|---|
| EAS Capability: | High EAS Capability |
| Resistance: | Low Rds(ON) |
Durable SGT Low Voltage MOSFET Multi Function With Smaller RSP
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Resistance: | Low Rds(ON) |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Industrial Low Voltage MOSFET Multifunctional For 5G Base Station
| Power Consumption: | Low Power Loss |
|---|---|
| EAS Capability: | High EAS Capability |
| Resistance: | Low Rds(ON) |
Energy Storage Low Voltage MOSFET Practical N Channel High EAS Capability
| EAS Capability: | High EAS Capability |
|---|---|
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| Structure Process: | Trench/SGT |
Revolutionary High Frequency Semiconductor Component For Renewable Energy Systems
| Temperature Resistance: | High-temperature Resistance |
|---|---|
| Reverse Recovery Current: | Extremely Low Reverse Recovery Current |
| Efficiency: | High Efficiency |