MOSFET Embedded FRD HV High Voltage FET for Etc. Applications

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Product Name High Voltage MOSFET Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Heat Dissipation Great Heat Dissipation HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Leakage Low Leakage Can Reach Less Than 1 µ A Resistance Low On-resistance
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. Technology MOSFET
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Product Description:

High Voltage MOSFET is a new generation of ultra-high voltage MOSFET technology, which has the advantages of new lateral variable doping technology, special power MOS structure and excellent characteristics in high-temperature. It is widely applied in motor series, inverter, half bridge/full bridge circuit applications, LED driver, adaptors, industrial switching power supply and inverters, etc. It has extremely low leakage, which can reach less than 1 µ A.

 

Technical Parameters:

Parameter Value
Resistance Low On-resistance
Leakage Low Leakage Can Reach Less Than 1 µ A
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Type N
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Heat Dissipation Great Heat Dissipation
Technology MOSFET
Voltage Rating High Voltage/Ultra-high Voltage
 

Applications:

Reasunos, a brand from Guangdong, China, provides high voltage MOSFETs, ultra-high voltage MOSFETs, and embedded FRD HV MOSFETs for various applications. Reasunos' HV MOSFETs are well-known for their low leakage, low on-resistance, and high voltage/ultra-high voltage ratings. The price of the product depends on the total quantity, and the packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is 2-30 days, depending on the total quantity, and payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month. The HV MOSFETs are widely used in LED drivers, adaptors, industrial switching power supply, and inverters.

 

Support and Services:

High Voltage MOSFET Technical Support and Services

We offer expert technical support and services for our High Voltage MOSFET product. Our experienced team of engineers are available to assist you with any questions or problems you may have.

We provide a wide range of services, including:

  • Troubleshooting and diagnostics
  • Design consultation
  • On-site technical support
  • Software updates
  • Custom solutions

If you have any questions or would like to learn more about our technical support and services for High Voltage MOSFET, please do not hesitate to contact us.

 

Packing and Shipping:

High Voltage MOSFETs are packaged and shipped in a static-dissipative shipping bag. This bag is used to protect the product against electrostatic discharge (ESD). The product should be inspected for damage immediately upon receipt and any damage should be reported to the shipping company.

The bag should be opened carefully and the product should not be removed until all safety steps have been taken. The product should not be exposed to any voltage higher than its rating during shipping or handling. The product should be stored in a static-safe environment such as an anti-static bag.

The product should be handled with care and inspected for any signs of damage before installation. The product should not be installed if any signs of damage are present. The product should be installed in accordance with the manufacturer's instructions.

 

FAQ:

Q: What is the brand name of this High Voltage MOSFET?
A: The brand name of this High Voltage MOSFET is REASUNOS.
Q: Where is the place of origin of this High Voltage MOSFET?
A: This High Voltage MOSFET is from Guangdong, CN.
Q: What is the price of this High Voltage MOSFET?
A: The price of this High Voltage MOSFET is based on the product. Please contact us for more info.
Q: How is this High Voltage MOSFET packaged?
A: This High Voltage MOSFET is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the delivery time for this High Voltage MOSFET?
A: The delivery time for this High Voltage MOSFET is 2-30 days, depending on the total quantity.