Ultra-HV MOSFET for Electrical Power System LED Driver Application

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. Technology MOSFET
Leakage Low Leakage Can Reach Less Than 1 µ A Heat Dissipation Great Heat Dissipation
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. Resistance Low On-resistance
Product Name High Voltage MOSFET HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Product Description:

High Voltage MOSFET is a new type of power semiconductor device. It offers advantages of ultra-high voltage, high efficiency and low on-resistance. This MOSFET is embedded with FRD (Field-Relaxing Diode), which offers ultra-high voltage protection capability and eliminates the need of external diode to improve system reliability. This device offers a new lateral variable doping technology, a special power MOS structure and excellent characteristics in high-temperature. It is widely used in smart meter, cabinet power supply, industrial switching power supply, LED driver, adaptors, inverters and other electrical power system.

 

Technical Parameters:

Product name High Voltage MOSFET
Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Voltage Rating High Voltage/Ultra-high Voltage
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Resistance Low On-resistance
Technology MOSFET
Heat Dissipation Great Heat Dissipation
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Type N
 

Applications:

REASUNOS high voltage MOSFET is a great choice for applications in embedded FRD HV MOSFET, Ultra-hv MOSFET and Ultra-high Voltage MOSFET. This product is originated from Guangdong, China and comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. It has a great heat dissipation with low on-resistance and low leakage that can reach less than 1µA. It also comes with new lateral variable doping technology and an excellent characteristics in high-temperature. The price of this product will be confirmed based on the product. The delivery time takes 2-30 days depending on the total quantity. The payment term is 100% T/T in advance and the supply ability is 5KK/month.

 

Support and Services:

High Voltage MOSFET Technical Support and Service

At our company, we provide expert technical support and service for High Voltage MOSFETs. Our team of experienced engineers can help you troubleshoot any issues you may be experiencing with your MOSFETs, and provide solutions to ensure that your products are running as efficiently and smoothly as possible.

We offer a variety of services, including:

  • Design consultation and optimization
  • Failure analysis and debugging
  • Performance optimization and testing
  • Software support and upgrades
  • Hardware and software troubleshooting

We take pride in our commitment to providing our customers with the highest quality technical support and service. If you have any questions or concerns, please don't hesitate to contact us.

 

Packing and Shipping:

Packaging and Shipping for High Voltage MOSFET

High Voltage MOSFET should always be packaged in a static-safe bag, placed in a box with a foam insert. The box should be labeled with the manufacturer’s name, part number, and date of shipment. Shipping should always take place in a timely manner, using a trusted carrier such as UPS or FedEx. The package should be marked with the appropriate hazardous material symbols, if applicable.

 

FAQ:

Q & A for High Voltage MOSFET
  • Q: What is the brand name for the High Voltage MOSFET?
    A: The brand name for the High Voltage MOSFET is REASUNOS.
  • Q: What is the place of origin for the High Voltage MOSFET?
    A: The place of origin for the High Voltage MOSFET is Guangdong, China.
  • Q: How much does the High Voltage MOSFET cost?
    A: The price of the High Voltage MOSFET is to be confirmed based on product.
  • Q: What is the packaging for the High Voltage MOSFET?
    A: The High Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
  • Q: How long does it take to deliver the High Voltage MOSFET?
    A: The delivery time for the High Voltage MOSFET is 2-30 days, depending on the total quantity.