Anti Surge High Voltage MOSFET Great Heat Dissipation Durable
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xVoltage Rating | High Voltage/Ultra-high Voltage | Heat Dissipation | Great Heat Dissipation |
---|---|---|---|
Resistance | Low On-resistance | Embedded FRD HV MOSFET Application | Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. |
Leakage | Low Leakage Can Reach Less Than 1 µ A | Advantages | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Product Name | High Voltage MOSFET | Type | N |
Highlight | Anti Surge High Voltage MOSFET,High Voltage MOSFET Great Heat Dissipation,Durable Mosfet High Voltage |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | Diode Trr(nS) | |
---|---|---|---|---|---|---|---|---|---|---|
1 | RSF38N30F | N | 38 | 300 | 0.09 | 0.11 | TO-220F | 1000 | 80 | |
2 | RSF45N50W | N | 45 | 500 | 0.1 | 0.125 | TO-247 | 600 | 95 | |
3 | RSF5N50D | N | 5 | 500 | 1.5 | 1.85 | TO-252 | 2500 | 61 | |
4 | RSF7N50D | N | 7 | 500 | 1.1 | 1.5 | TO-252 | 2500 | 100 | |
5 | RSF3N60D | N | 3 | 600 | 2.8 | 3.4 | TO-252 | 2500 | 55 | |
6 | RSF4N60D | N | 4 | 600 | 2 | 2.4 | TO-252 | 2500 | 60 | |
7 | RSF4N60F | N | 4 | 600 | 2 | 2.4 | TO-220F | 1000 | 60 | |
8 | RS2N65D | N | 2 | 650 | 3.8 | 4.5 | TO-252 | 2500 | -- | |
9 | RS2N65F | N | 2 | 650 | 3.8 | 4.5 | TO-220F | 1000 | -- | |
10 | RS4N65D | N | 4 | 650 | 2 | 2.4 | TO-252 | 2500 | -- | |
11 | RS4N65MD | N | 4 | 650 | 2 | 2.4 | TO-251 | 4000 | -- | |
12 | RS4N65F | N | 4 | 650 | 2 | 2.4 | TO-220F | 1000 | -- | |
13 | RS5N65D | N | 5 | 650 | 1.8 | 2.1 | TO-252 | 2500 | -- | |
14 | RS5N65F | N | 5 | 650 | 1.8 | 2.1 | TO-220F | 1000 | -- | |
15 | RS6N65D | N | 6 | 650 | 1.65 | 1.9 | TO-252 | 2500 | -- | |
16 | RS6N60F | N | 6 | 600 | 1 | 1.15 | TO-220F | 1000 | -- | |
17 | RS6N65F | N | 6 | 650 | 1.65 | 1.9 | TO-220F | 1000 | -- | |
18 | RS7N65D | N | 7 | 650 | 1.1 | 1.4 | TO-252 | 2500 | -- | |
19 | RS7N65MD | N | 7 | 650 | 1.1 | 1.4 | TO-251 | 4000 | -- | |
20 | RS7N65F | N | 7 | 650 | 1.1 | 1.4 | TO-220F | 1000 | -- | |
21 | RS8N60F | N | 8 | 600 | 0.75 | 0.9 | TO-220F | 1000 | -- | |
22 | RS8N65F | N | 8 | 650 | 0.95 | 1.15 | TO-220F | 1000 | -- | |
23 | RS10N65D | N | 10 | 650 | 0.93 | 1.05 | TO-252 | 2500 | -- | |
24 | RS10N65F | N | 10 | 650 | 0.65 | 0.8 | TO-220F | 1000 | -- | |
25 | RS10N60F | N | 10 | 600 | 0.6 | 0.72 | TO-220F | 1000 | -- | |
26 | RS12N65F | N | 12 | 650 | 0.6 | 0.72 | TO-220F | 1000 | -- | |
27 | RS12N60F | N | 12 | 600 | 0.5 | 0.62 | TO-220F | 1000 | -- | |
28 | RS13N65F | N | 13 | 650 | 0.52 | 0.65 | TO-220F | 1000 | -- | |
29 | RS16N65F | N | 16 | 650 | 0.45 | 0.55 | TO-220F | 1000 | -- | |
30 | RS20N65F | N | 20 | 650 | 0.35 | 0.45 | TO-220F | 1000 | -- | |
31 | RS5N50D | N | 5 | 500 | 1.25 | 1.45 | TO-252 | 2500 | -- | |
32 | RS6N50D | N | 6 | 500 | 1.2 | 1.5 | TO-252 | 2500 | -- | |
33 | RS9N50D | N | 9 | 500 | 0.65 | 0.8 | TO-252 | 2500 | -- | |
34 | RS9N50F | N | 9 | 500 | 0.65 | 0.8 | TO-220F | 1000 | -- | |
35 | RS10N50F | N | 10 | 500 | 0.66 | 0.8 | TO-220F | 1000 | -- | |
36 | RS11N50F | N | 11 | 500 | 0.48 | 0.6 | TO-220F | 1000 | -- | |
37 | RS13N50F | N | 13 | 500 | 0.39 | 0.46 | TO-220F | 1000 | -- | |
38 | RS15N50F | N | 15 | 500 | 0.35 | 0.42 | TO-220F | 1000 | -- | |
39 | RS18N50F | N | 18 | 500 | 0.28 | 0.34 | TO-220F | 1000 | -- | |
40 | RS20N50F | N | 20 | 500 | 0.21 | 0.27 | TO-220F | 1000 | -- | |
41 | RS20N50W | N | 20 | 500 | 0.21 | 0.27 | TO-247-3 | 600 | -- | |
42 | RS25N50F | N | 25 | 500 | 0.18 | 0.24 | TO-220F | 1000 | -- | |
43 | RS25N50W | N | 25 | 500 | 0.18 | 0.24 | TO-247-3 | 600 | -- | |
44 | RS28N50W | N | 28 | 500 | 0.14 | 0.18 | TO-247-3 | 600 | -- | |
45 | RS30N50W | N | 30 | 500 | 0.085 | 0.12 | TO-247-3 | 600 | -- | |
46 | RS4N80F | N | 4 | 800 | 3.2 | 3.8 | TO-220F | 1000 | -- | |
47 | RS8N80F | N | 8 | 800 | 1.35 | 1.6 | TO-220F | 1000 | -- | |
48 | RS10N80F | N | 10 | 800 | 1 | 1.2 | TO-220F | 1000 | -- | |
49 | RS3N90MD | N | 3 | 900 | 4 | 4.8 | TO-251 | 4000 | -- | |
50 | RS4N90D | N | 4 | 900 | 3 | 3.5 | TO-252 | 2500 | -- | |
51 | RS4N90F | N | 4 | 900 | 3 | 3.5 | TO-220F | 1000 | -- | |
52 | RS6N90F | N | 6 | 900 | 1.7 | 2.05 | TO-220F | 1000 | -- | |
53 | RS9N90F | N | 9 | 900 | 1.2 | 1.55 | TO-220F | 1000 | -- | |
54 | RS9N90PF | N | 9 | 900 | 1.2 | 1.55 | TO-3PF | 300 | -- | |
55 | RS2N100D | N | 2 | 1000 | 6 | 7.2 | TO-252 | 2500 | -- | |
56 | RSE3N100F | N | 3 | 1000 | 4.6 | 5.5 | TO-220F | 1000 | -- | |
57 | RS6N100F | N | 6 | 1000 | 1.2 | 1.5 | TO-220F | 1000 | -- | |
58 | RS2N120D | N | 2 | 1200 | 10.5 | 12.5 | TO-252 | 2500 | -- | |
59 | RS3N120D | N | 3 | 1200 | 7.3 | 8.5 | TO-252 | 2500 | -- | |
60 | RS6N120T | N | 6 | 1200 | 2.1 | 2.5 | TO-220 | 1000 | -- | |
61 | RS3N150F | N | 3 | 1500 | 5.5 | 6.5 | TO-220F | 1000 | -- | |
62 | RS3N150PF | N | 3 | 1500 | 5.5 | 6.5 | TO-3PF | 300 | -- | |
63 | RS3N150W | N | 3 | 1500 | 5.5 | 6.5 | TO247-3 | 600 | -- |
High Voltage MOSFET Technology for Ultra-high Voltage Applications
Product Description:
High Voltage MOSFET is a type of power MOSFET transistor which is capable of operating at high voltage and providing superior performance in terms of leakage current, low on-resistance, and excellent characteristics in high-temperature. Embedded FRD High Voltage MOSFET is a special power MOS structure based on a new lateral variable doping technology which makes it suitable for applications such as LED drivers, adaptors, industrial switching power supplies, inverters, etc. N-Channel High Voltage MOSFET, with its low leakage current reaching less than 1µA, stands out among its peers with its remarkable features.
Technical Parameters:
Parameter | Specification |
---|---|
Product Name | High Voltage MOSFET |
Type | N |
Leakage | Low Leakage Can Reach Less Than 1 µ A |
Resistance | Low On-resistance |
Technology | MOSFET |
Advantages | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Voltage Rating | High Voltage/Ultra-high Voltage |
HV Mosfet Application | LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc |
Ultra-HV MOSFET Application | Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc |
Embedded FRD HV MOSFET Application | Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. |
Applications:
High Voltage MOSFET transistors from REASUNOS are power transistors designed for high voltage and ultra-high voltage applications. With their new lateral variable doping technology, special power MOS structure and excellent characteristics in high temperature, they are a reliable choice for your high voltage needs. With great heat dissipation, they are able to operate for a long time while keeping the device cool. The low on-resistance ensures that they are able to handle a large amount of current, while the high voltage rating makes them ideal for applications requiring high voltage and ultra-high voltage. The REASUNOS High Voltage MOSFET transistors are packaged in dustproof, waterproof and anti-static tubular packaging, placed inside a cardboard box in cartons. The price is confirmable based on the product. The delivery time is 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance (EXW). With a supply ability of 5KK/month, they are a reliable and cost-effective solution for your high voltage needs.
Support and Services:
We provide comprehensive technical support and service for our High Voltage MOSFET products. Our technical support team is available to answer any questions you may have about our products, and can provide guidance on how to optimize performance. We also provide detailed product documentation, including installation instructions, datasheets, and application notes, to help you get the most out of your High Voltage MOSFET product.
For any technical issues, we have an experienced team of engineers available to provide troubleshooting assistance. We can also provide custom design services to meet your specific needs. Our team of experts is ready to help you identify the best solutions for your application.
If you require additional technical support, please contact us at [insert contact information]. We look forward to helping you achieve success with our High Voltage MOSFET products.
Packing and Shipping:
High Voltage MOSFET Packaging and Shipping
High Voltage MOSFETs are sensitive and require special care when packaging and shipping. To ensure safe delivery, it is important to select the right packaging materials, use the right packing techniques, and choose the right carrier.
Packaging:
High Voltage MOSFETs should be individually wrapped in electrostatic-dissipative (ESD) material to protect them from static electricity. The ESD material should be placed in a sealed container that is designed to protect against shock, vibration, and humidity. The container should also be labeled with the part number and other relevant information.
Shipping:
High Voltage MOSFETs should be shipped using a reliable carrier that offers tracking and insurance. It is also important to package the MOSFETs properly and clearly label the address. It is also best to select a carrier that specializes in shipping sensitive electronic components.
FAQ:
Q: What is the Brand Name of the High Voltage MOSFET?
A: The Brand Name of the High Voltage MOSFET is REASUNOS.
Q: Where is the Place of Origin of the High Voltage MOSFET?
A: The Place of Origin of the High Voltage MOSFET is Guangdong, China.
Q: What is the Price of the High Voltage MOSFET?
A: The Price of the High Voltage MOSFET is Confirm price based on product.
Q: What is the Packaging Details for the High Voltage MOSFET?
A: The Packaging Details for the High Voltage MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: What is the Delivery Time for the High Voltage MOSFET?
A: The Delivery Time for the High Voltage MOSFET is 2-30 days, which depends on the Total Quantity.
Q: What are the Payment Terms for the High Voltage MOSFET?
A: The Payment Terms for the High Voltage MOSFET is 100% T/T in Advance(EXW).
Q: What is the Supply Ability for the High Voltage MOSFET?
A: The Supply Ability for the High Voltage MOSFET is 5KK/month.