1μA Inverters High Voltage MOS , Industrial High Voltage Bipolar Transistor

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. HV Mosfet Application LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc
Voltage Rating High Voltage/Ultra-high Voltage Technology MOSFET
Leakage Low Leakage Can Reach Less Than 1 µ A Embedded FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Ultra-HV MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. Type N
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1μA High Voltage MOS

,

Inverters High Voltage MOS

,

Industrial High Voltage Bipolar Transistor

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
1 RSF38N30F N 38 300 0.09 0.11 TO-220F 1000 80
2 RSF45N50W N 45 500 0.1 0.125 TO-247 600 95
3 RSF5N50D N 5 500 1.5 1.85 TO-252 2500 61
4 RSF7N50D N 7 500 1.1 1.5 TO-252 2500 100
5 RSF3N60D N 3 600 2.8 3.4 TO-252 2500 55
6 RSF4N60D N 4 600 2 2.4 TO-252 2500 60
7 RSF4N60F N 4 600 2 2.4 TO-220F 1000 60
8 RS2N65D N 2 650 3.8 4.5 TO-252 2500 --
9 RS2N65F N 2 650 3.8 4.5 TO-220F 1000 --
10 RS4N65D N 4 650 2 2.4 TO-252 2500 --
11 RS4N65MD N 4 650 2 2.4 TO-251 4000 --
12 RS4N65F N 4 650 2 2.4 TO-220F 1000 --
13 RS5N65D N 5 650 1.8 2.1 TO-252 2500 --
14 RS5N65F N 5 650 1.8 2.1 TO-220F 1000 --
15 RS6N65D N 6 650 1.65 1.9 TO-252 2500 --
16 RS6N60F N 6 600 1 1.15 TO-220F 1000 --
17 RS6N65F N 6 650 1.65 1.9 TO-220F 1000 --
18 RS7N65D N 7 650 1.1 1.4 TO-252 2500 --
19 RS7N65MD N 7 650 1.1 1.4 TO-251 4000 --
20 RS7N65F N 7 650 1.1 1.4 TO-220F 1000 --
21 RS8N60F N 8 600 0.75 0.9 TO-220F 1000 --
22 RS8N65F N 8 650 0.95 1.15 TO-220F 1000 --
23 RS10N65D N 10 650 0.93 1.05 TO-252 2500 --
24 RS10N65F N 10 650 0.65 0.8 TO-220F 1000 --
25 RS10N60F N 10 600 0.6 0.72 TO-220F 1000 --
26 RS12N65F N 12 650 0.6 0.72 TO-220F 1000 --
27 RS12N60F N 12 600 0.5 0.62 TO-220F 1000 --
28 RS13N65F N 13 650 0.52 0.65 TO-220F 1000 --
29 RS16N65F N 16 650 0.45 0.55 TO-220F 1000 --
30 RS20N65F N 20 650 0.35 0.45 TO-220F 1000 --
31 RS5N50D N 5 500 1.25 1.45 TO-252 2500 --
32 RS6N50D N 6 500 1.2 1.5 TO-252 2500 --
33 RS9N50D N 9 500 0.65 0.8 TO-252 2500 --
34 RS9N50F N 9 500 0.65 0.8 TO-220F 1000 --
35 RS10N50F N 10 500 0.66 0.8 TO-220F 1000 --
36 RS11N50F N 11 500 0.48 0.6 TO-220F 1000 --
37 RS13N50F N 13 500 0.39 0.46 TO-220F 1000 --
38 RS15N50F N 15 500 0.35 0.42 TO-220F 1000 --
39 RS18N50F N 18 500 0.28 0.34 TO-220F 1000 --
40 RS20N50F N 20 500 0.21 0.27 TO-220F 1000 --
41 RS20N50W N 20 500 0.21 0.27 TO-247-3 600 --
42 RS25N50F N 25 500 0.18 0.24 TO-220F 1000 --
43 RS25N50W N 25 500 0.18 0.24 TO-247-3 600 --
44 RS28N50W N 28 500 0.14 0.18 TO-247-3 600 --
45 RS30N50W N 30 500 0.085 0.12 TO-247-3 600 --
46 RS4N80F N 4 800 3.2 3.8 TO-220F 1000 --
47 RS8N80F N 8 800 1.35 1.6 TO-220F 1000 --
48 RS10N80F N 10 800 1 1.2 TO-220F 1000 --
49 RS3N90MD N 3 900 4 4.8 TO-251 4000 --
50 RS4N90D N 4 900 3 3.5 TO-252 2500 --
51 RS4N90F N 4 900 3 3.5 TO-220F 1000 --
52 RS6N90F N 6 900 1.7 2.05 TO-220F 1000 --
53 RS9N90F N 9 900 1.2 1.55 TO-220F 1000 --
54 RS9N90PF N 9 900 1.2 1.55 TO-3PF 300 --
55 RS2N100D N 2 1000 6 7.2 TO-252 2500 --
56 RSE3N100F N 3 1000 4.6 5.5 TO-220F 1000 --
57 RS6N100F N 6 1000 1.2 1.5 TO-220F 1000 --
58 RS2N120D N 2 1200 10.5 12.5 TO-252 2500 --
59 RS3N120D N 3 1200 7.3 8.5 TO-252 2500 --
60 RS6N120T N 6 1200 2.1 2.5 TO-220 1000 --
61 RS3N150F N 3 1500 5.5 6.5 TO-220F 1000 --
62 RS3N150PF N 3 1500 5.5 6.5 TO-3PF 300 --
63 RS3N150W N 3 1500 5.5 6.5 TO247-3 600 --
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs) Diode Trr(nS)
Product Description

Product Description:

Introducing the High Voltage MOSFET, a MOS-Gate Transistor specifically designed for ultra-high voltage applications. This particular device is ideal for Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, and Electrical Power System applications. Its low leakage can reach less than 1 µA, and is N type with low on-resistance. This device is perfect for any type of high voltage applications.

 

Technical Parameters:

Product name High Voltage MOSFET
Heat Dissipation Great Heat Dissipation
Leakage Low Leakage Can Reach Less Than 1 µ A
Advantages New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature.
Voltage Rating High Voltage/Ultra-high Voltage
High Voltage MOSFET Application Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc.
Technology MOSFET
FRD HV MOSFET Application Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc.
Type N
Resistance Low On-resistance
 

Applications:

High Voltage MOSFET, produced by REASUNOS in Guangdong, China, has many advantages. Its price is confirmed based on product. It is packed in dustproof, waterproof, and anti-static tubular packaging, and placed inside a cardboard box in cartons. The delivery time is 2-30 days, depending on the total quantity; and the payment terms is 100% T/T in advance (EXW). REASUNOS also has a great capacity of 5KK/month. The leakage of the product is very low, which can reach less than 1 µA. It is also featured with the new lateral variable doping technology and special power MOS structure, which make it excellent in high temperature. Besides, it has great heat dissipation. This High Voltage MOSFET can be used for motor series, inverter, half bridge/full bridge circuit applications, etc. It is rated with high voltage and ultra-high voltage.

 

Support and Services:

High Voltage MOSFET Technical Support and Services

We provide comprehensive technical support and services for High Voltage MOSFET products. Our team of experienced engineers and technicians are available to answer your questions and offer guidance on product selection, application optimization, and troubleshooting. We can also provide customized solutions and design assistance to meet your specific requirements.

Our technical support services include:

  • Product selection and evaluation
  • Application optimization
  • Design assistance
  • Troubleshooting
  • Customized solutions

We are committed to providing the best technical support and services for High Voltage MOSFET products. If you have any questions or need assistance, please don't hesitate to contact us.

 

Packing and Shipping:

Packaging and Shipping
  • High Voltage MOSFET products must be packaged in an anti-static material to protect them from static electricity.
  • All shipping must include adequate padding and protection.
  • Mark all packages clearly with the product name, part number, and destination.
  • All packages must be shipped with tracking information.
 

FAQ:

Q: What is the brand name of the High Voltage MOSFET?
A: The brand name is REASUNOS.
Q: Where is the High Voltage MOSFET from?
A: The High Voltage MOSFET is produced in Guangdong, China.
Q: What is the price of the High Voltage MOSFET?
A: The price of the High Voltage MOSFET varies based on the product. Please contact us for a quote.
Q: How is the High Voltage MOSFET packaged?
A: The High Voltage MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: How long does it take to get the High Voltage MOSFET?
A: Delivery takes 2-30 days, depending on the total quantity of the order.