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Durable Silicon Carbide MOSFET Heat Dissipation For Automotive
| Place of Origin | Guangdong, CN |
|---|---|
| Brand Name | REASUNOS |
| Minimum Order Quantity | 600 |
| Price | Confirm price based on product |
| Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
| Delivery Time | 2-30 days (Depends on Total Quantity) |
| Payment Terms | 100% T/T in Advance(EXW) |
| Supply Ability | 5KK/month |
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xProduct Details
| Material | Silicon Carbide | Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
|---|---|---|---|
| Efficiency | High Efficiency | Product Name | Silicon Carbide MOSFET |
| Power | High Power | Resistance | Low On Resistance |
| Device Type | MOSFET | Type | N |
| Highlight | Durable Silicon Carbide MOSFET,Silicon Carbide MOSFET Automotive,Heat Dissipation Sic Mosfet Automotive |
||
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| No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RSM065030W | N | 55 | 650 | 30 | 50 | TO247-3 | 600 | |
| 2 | RSM065030Z | N | 55 | 650 | 30 | 50 | TO247-4 | 600 | |
| 3 | RSM065060W | N | 29 | 650 | 60 | 79 | TO247-3 | 600 | |
| 4 | RSM065060Z | N | 29 | 650 | 60 | 79 | TO247-4 | 600 | |
| 5 | RSM120018Z | N | 105 | 1200 | 18 | 26 | TO247-4 | 600 | |
| 6 | RSM120025W | N | 90 | 1200 | 25 | 34 | TO247-3 | 600 | |
| 7 | RSM120025Z | N | 90 | 1200 | 25 | 34 | TO247-4 | 600 | |
| 8 | RSM120040W | N | 68 | 1200 | 40 | 55 | TO247-3 | 600 | |
| 9 | RSM120040Z | N | 68 | 1200 | 40 | 55 | TO247-4 | 600 | |
| 10 | RSM120075W | N | 33 | 1200 | 75 | 95 | TO247-3 | 600 | |
| 11 | RSM120075Z | N | 33 | 1200 | 75 | 95 | TO247-4 | 600 | |
| 12 | RSM120080W | N | 36 | 1200 | 80 | 98 | TO247-3 | 600 | |
| 13 | RSM120080Z | N | 36 | 1200 | 80 | 98 | TO247-4 | 600 | |
| 14 | RSM120160W | N | 18 | 1200 | 160 | 196 | TO247-3 | 600 | |
| 15 | RSM120160Z | N | 18 | 1200 | 160 | 196 | TO247-4 | 600 | |
| 16 | RSM1701K0W | N | 5 | 1700 | 1000 | 1300 | TO247-3 | 600 | |
| 17 | RSM1701K0Z | N | 5 | 1700 | 1000 | 1300 | TO247-4 | 600 | |
| 18 | RSM170045W | N | 72 | 1700 | 45 | 70 | TO247-3 | 600 | |
| 19 | RSM170045Z | N | 72 | 1700 | 45 | 70 | TO247-4 | 600 |
Product Description
Product Description:
Silicon Carbide MOSFETs are a type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based on the Silicon Carbide (SiC) Field Effect Transistor (FET) technology. These transistors are specially designed for providing high power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military standard production line. Silicon Carbide MOSFETs are able to operate at high frequencies and have a wide range of applications in various fields such as power electronics, industrial automation, renewable energy, and automotive industry.
The Silicon Carbide MOSFETs feature high power and high frequency performance, making them ideal for a variety of applications. They are also highly reliable and stable due to their production process based on the national military standard production line. These transistors are used in a variety of applications that require high frequency, such as power electronics, industrial automation, renewable energy, and automotive industry.
Silicon Carbide MOSFETs offer many advantages over traditional silicon-based transistors. They have higher power densities, higher operating temperatures, higher frequencies, and are more reliable and stable in operation. They are also more efficient and cost-effective for many applications.
In conclusion, Silicon Carbide MOSFETs are an excellent choice for applications that require high power and high frequency performance. They are highly reliable and stable due to the national military standard production line. They also offer higher power densities, higher operating temperatures, higher frequencies, and are more efficient and cost-effective than traditional silicon-based transistors.
Technical Parameters:
| Product name | Silicon Carbide MOSFET |
| Material | Silicon Carbide |
| Efficiency | High Efficiency |
| Type | N |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Resistance | Low On Resistance |
| Device Type | MOSFET |
| Frequency | High Frequency |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Power | High Power |
| Keywords | MOSFET Based on Silicon Carbide, SiC MOSFETs, SiC Metal-Oxide-Semiconductor Field-Effect Transistors. |
Applications:
The REASUNOS Silicon Carbide MOSFET is a metal-oxide-semiconductor field-effect transistor based on silicon carbide, which has numerous advantages. It is well known for its high efficiency, high frequency, and its low power consumption, making it an ideal choice for applications such as solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, charging pile, etc. It is produced in accordance with the national military standard production line, making it a very reliable product.
The REASUNOS Silicon Carbide MOSFET is available in minimum order quantities of 600 pieces and a price that is dependent upon the product. All orders come with dustproof, waterproof, and anti-static tubular packaging and are placed inside a cardboard box in cartons. Delivery times range from 2-30 days, depending on the total quantity of the order. Payment terms are 100% T/T in Advance(EXW). The REASUNOS Silicon Carbide MOSFET is able to supply up to 5KK pieces per month.
Support and Services:
Silicon Carbide MOSFET Technical Support and Service
We offer a wide range of technical support and service options for our Silicon Carbide MOSFET customers. Our technical support team is on-hand to provide assistance and advice for the effective use and application of our products.
Product Selection
Our team can help you select the most suitable product for your application. We also provide assistance in designing and implementing the most appropriate solution for your needs.
Technical Support
We provide technical and engineering support for our Silicon Carbide MOSFET products. Our team is available to answer any questions you may have about the products and provide advice on their application.
Training
We offer training courses for our Silicon Carbide MOSFET customers. Our courses are designed to provide customers with the knowledge needed to successfully use and apply our products.
Warranty
We offer a comprehensive warranty for all of our Silicon Carbide MOSFET products. Our warranty covers all manufacturing defects and provides for repairs and replacements in the event of a fault or failure.
Packing and Shipping:
Silicon Carbide MOSFET Packaging and Shipping:
Silicon Carbide MOSFETs are packaged in hermetically sealed packages that are designed to protect the device from moisture and other environmental contaminants. The package is then placed in an antistatic bag for further protection. The package is then placed in a box and shipped to the customer.
FAQ:
- Q: What is the brand name of Silicon Carbide MOSFET?
A: The brand name is REASUNOS. - Q: Where is Silicon Carbide MOSFET from?
A: The Silicon Carbide MOSFET is from Guangdong, China. - Q: What is the MOQ of Silicon Carbide MOSFET?
A: The MOQ of Silicon Carbide MOSFET is 600. - Q: How much is the price of Silicon Carbide MOSFET?
A: The price of Silicon Carbide MOSFET is confirm price based on product. - Q: What is the packaging of Silicon Carbide MOSFET?
A: The packaging of Silicon Carbide MOSFET is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
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