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Keywords [ n channel high power mosfet ] match 70 Products.
Metal Practical High Voltage SiC Mosfet , N Type Silicon Carbide Semiconductor
| Advantages: | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
|---|---|
| Power: | High Power |
| Type: | N |
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Stable Converter Silicon Carbide Transistor , UPS Power Supply SiC FETs
| Power: | High Power |
|---|---|
| Resistance: | Low On Resistance |
| Application: | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
Multiscene Low Voltage MOSFET P Channel For Energy Storage SGT Process
| Product Name: | Low Voltage MOSFET |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Anti Surge Super Junction Mos , Practical N Channel Metal Oxide Semiconductor
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
|---|---|
| Type: | N |
| Capacitance: | Ultra-low Junction Capacitance |
Multipurpose Low Voltage FET , Durable Low Power N Channel Mosfet
| Resistance: | Low Rds(ON) |
|---|---|
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
| Structure Process: | Trench/SGT |
Fast Charging Low Voltage MOSFET N Channel Multipurpose For Motor Driver
| Power Consumption: | Low Power Loss |
|---|---|
| EAS Capability: | High EAS Capability |
| Structure Process: | Trench/SGT |
Durable Industrial Super Junction Mos , Multi Function Mosfet Discrete
| Product Name: | Super Junction MOSFET/SJ MOSTET |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
Stable 20V Low Power P Channel Mosfet , Practical Low Voltage High Current Transistor
| Efficiency: | High Efficiency And Reliable |
|---|---|
| Power Consumption: | Low Power Loss |
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
|---|---|
| Resistance: | Low Rds(ON) |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Small RSP Low Voltage MOSFET Multi Scene N Channel Low Threshold
| EAS Capability: | High EAS Capability |
|---|---|
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |