Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Structure Process Trench/SGT SGT Process Advantages Breakthrough FOM Optimization, Covering More Application.
Product Name Low Voltage MOSFET Efficiency High Efficiency And Reliable
Power Consumption Low Power Loss SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. EAS Capability High EAS Capability
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Product Description

Product Description:

The Low Voltage MOSFET is a cutting-edge semiconductor device designed for a variety of applications requiring high efficiency, reliability, and low-power consumption. MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of transistor used for amplifying or switching electronic signals. This product is specifically engineered to operate at low voltages, making it an ideal component for modern electronic devices where power efficiency is paramount.

At the heart of the Low Voltage MOSFET's high efficiency lies its low Rds(ON), which stands for Drain-Source On-Resistance. This crucial parameter dictates how much power is lost as heat when the MOSFET is conducting electricity. The lower the Rds(ON), the less power is wasted, which ensures that the device operates coolly and conserves energy. This is particularly beneficial in applications where maintaining a low thermal footprint is essential.

These Low Voltage Transistors are designed using the state-of-the-art SGT (Strained Gate Technology) process, which offers breakthrough FOM (Figure of Merit) optimization. FOM is a critical measure of a MOSFET's performance that takes into account Rds(ON) and gate charge (Qg). The SGT process enhances the FOM by optimizing these parameters, allowing for more efficient and responsive performance, which in turn makes these transistors suitable for covering more applications. Whether for power management in portable devices, motor control in industrial automation, or in power supplies, these MOSFETs deliver exceptional performance.

Power consumption is a critical aspect of any electronic component, and the Low Voltage MOSFET excels in this area with its low power loss characteristics. By minimizing the voltage drops across the component and ensuring that the power is used effectively, these MOSFETs contribute to the overall energy efficiency of the systems they are integrated into. This makes them an indispensable part of power-sensitive designs where battery life and energy conservation are of utmost importance.

The Low Voltage MOSFET also features a low gate voltage, which is a significant advantage in low-power applications. A low gate voltage MOSFET requires less energy to switch on and off, which translates to reduced power consumption for the driving circuitry. This characteristic is especially important in portable electronics where extending battery life is crucial. The ability to operate efficiently with low gate voltages also simplifies circuit design, as it reduces the need for complex level-shifting circuitry often required for interfacing with higher voltage components.

Moreover, the low vgs MOSFET, referring to the gate-source voltage, highlights the device's ability to operate effectively with minimal voltage levels between the gate and source terminals. This ensures that the MOSFET can be driven at lower voltages, further enhancing its compatibility with low-voltage logic circuits and microcontrollers. The reduced gate drive requirements not only save power but also contribute to faster switching speeds, enabling high-frequency operation without the penalty of increased power consumption.

In summary, the Low Voltage MOSFET is a highly efficient, reliable, and power-conserving semiconductor device that stands out due to its low Rds(ON), advanced SGT process advantages, and suitability for a wide range of applications. With its low gate voltage and low vgs characteristics, it represents a significant advancement in the field of power electronics, offering designers a versatile and energy-efficient component for their next-generation electronic systems. The Low Voltage MOSFET is poised to be a game-changer for industries looking to enhance performance while reducing power consumption and managing heat dissipation in their electronic devices.


Features:

  • Product Name: Low Voltage MOSFET
  • SGT Process Advantages:
    • Breakthrough FOM (Figure of Merit) Optimization
    • Covering More Applications
  • EAS Capability: High EAS (Energy Avalanche and Switching) Capability
  • Structure Process: Trench/SGT
  • Power Consumption: Low Power Loss
  • Trench Process Advantages:
    • Smaller RSP (Resistance x Area Product)
    • Both Series And Parallel Configurations Can Be Freely Combined And Utilized
  • Keywords:
    • Low Voltage Transistor
    • Low Gate Voltage MOSFET
    • Trench Low Voltage MOSFET

Technical Parameters:

Parameter Details
Product Name Low Voltage MOSFET
Structure Process Trench/SGT
Efficiency High Efficiency And Reliable
Power Consumption Low Power Loss
Resistance Low Rds(ON)
EAS Capability High EAS Capability
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification

Applications:

The REASUNOS Low Voltage MOSFET is a high-efficiency semiconductor device, meticulously engineered to operate at low gate voltages, making it an ideal component for a wide array of applications. Originating from the technological hub of Guangdong, CN, this low VGS MOSFET is designed to meet the demanding requirements of modern electronic circuits where low resistance and high reliability are paramount.

With its low Rds(ON) characteristic, the REASUNOS Low Voltage MOSFET ensures minimal energy loss and improves overall system efficiency, which is critical for battery-powered devices and energy-sensitive systems. The breakthrough SGT process advantages of this low gate voltage MOSFET include optimized Figure of Merit (FOM), which extends its application to more demanding scenarios, such as power management in portable electronics, DC-DC converters, and motor control units.

Moreover, the Trench process advantages provide this MOSFET with a smaller RSP, enabling both series and parallel configurations. This flexibility allows designers to freely combine and utilize the REASUNOS MOSFETs in various circuit topologies to achieve the best performance possible. The adaptability of this low VGS MOSFET makes it suitable for a broad spectrum of products, ranging from consumer electronics to industrial automation systems.

When it comes to packaging, REASUNOS ensures the Low Voltage MOSFET is delivered in pristine condition, thanks to dustproof, waterproof, and anti-static tubular packaging. Each MOSFET is carefully placed inside a cardboard box, which is then securely packed in cartons to safeguard it during transit. The delivery time is efficient and ranges from 2-30 days, depending on the total quantity ordered, with a supply ability of 5KK/month, reflecting the brand's commitment to meeting large-scale demands swiftly.

REASUNOS has set forth clear terms for purchase, including a 100% T/T payment in advance (EXW), ensuring a transparent transaction. Customers interested in acquiring the Low Voltage MOSFET are invited to confirm the price based on the product specifications and quantity requirements. With REASUNOS, clients are assured of a product that brings together high efficiency, reliability, and the versatility needed for cutting-edge electronic applications that require a low VGS MOSFET.


Support and Services:

Our Low Voltage MOSFET products are designed to deliver high performance and reliability. To ensure you get the most out of your product, we offer a comprehensive suite of technical support and services. Our technical support includes detailed product documentation, application notes, and design tools to assist in device selection and system integration. Additionally, we offer troubleshooting assistance and can provide guidance on best practices for device usage and handling to maximize performance and longevity. For complex issues or design challenges, our team of experts is available to provide in-depth technical consultations. Note that our services exclude direct contact support, but we ensure that our online resources are extensive and up-to-date to address your needs effectively.


Packing and Shipping:

The Low Voltage MOSFET product is carefully packaged in anti-static material to ensure safe transportation and handling. Each MOSFET is individually encased in a protective sleeve to prevent electrical damage and is then placed within a sturdy, custom-fit cardboard box that provides additional insulation and shock absorption. The outer package is clearly marked with the necessary handling and electrostatic sensitivity warnings to ensure compliance with shipping regulations and to inform handlers of the care required.

Prior to dispatch, the package undergoes a final inspection to verify that it is securely sealed and properly labeled with the destination address, tracking information, and any pertinent customs declarations. The package is then entrusted to our reliable shipping partner, who provides expedited service to ensure your Low Voltage MOSFET product arrives promptly and in pristine condition.