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Multipurpose Silicon Carbide MOSFET 650V Heat Dissipation High Efficiency

  • Multipurpose Silicon Carbide MOSFET 650V Heat Dissipation High Efficiency
Place of Origin Guangdong, CN
Brand Name REASUNOS
Minimum Order Quantity 600
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. Frequency High Frequency
Power High Power Device Type MOSFET
Product Name Silicon Carbide MOSFET Efficiency High Efficiency
Resistance Low On Resistance Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
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Multipurpose Silicon Carbide MOSFET

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Silicon Carbide MOSFET 650V

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Heat Dissipation 650V Sic Mosfet
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSE60R190F N 17.6 600 165 190 TO-220F 1000
2 RSE60R190S N 17.6 600 165 190 TO-263 800
3 RSE60R150F N 22 600 130 150 TO-220F 1000
4 RSF60R150F N 22 600 130 150 TO-220F 1000
5 RSF60R190F N 17.6 600 165 190 TO-220F 1000
6 RS60R130F N 30 600 110 130 TO-220F 1000
7 RS60R130W N 30 600 110 130 TO247-3 600
8 RSF60R099F N 31 600 86 99 TO-220F 1000
9 RSF60R099W N 31 600 86 99 TO247-3 600
10 RSF60R070W N 45 600 61 70 TO247-3 600
11 RSF60R041W N 70 600 35 41 TO247-3 600
12 RSF60R070F N 48 600 58 68 TO-220F 1000
13 RSF60R026W N 100 600 20 26 TO247-3 600
14 RSU4N65D N 4 650 880 1000 TO-252 2500
15 RSU7N65D N 7 650 560 650 TO-252 2500
16 RSU7N65F N 7 650 560 650 TO-220F 1000
17 RS65R600D N 7.3 650 520 600 TO-252 2500
18 RS65R600F N 7.3 650 520 600 TO-220F 1000
19 RSE65R550D N 7.6 650 480 550 TO-252 2500
20 RSU12N65F N 12 650 380 420 TO-220F 1000
21 RS65R380D N 11 650 340 380 TO-252 2500
22 RS65R380F N 11 650 340 380 TO-220F 1000
23 RS65R280D N 15 650 240 280 TO-252 2500
24 RS65R280F N 15 650 240 280 TO-220F 1000
25 RSE65R210F N 16.8 650 185 210 TO-220F 1000
26 RS65R190F N 20 650 160 190 TO-220F 1000
27 RS65R190S N 20 650 160 190 TO-263 800
28 RS65R190T N 20 650 160 190 TO-220 1000
29 RSF65R190T N 20 650 170 190 TO-220 1000
30 RSE65R180F N 22 650 150 180 TO-220F 1000
31 RSE65R165F N 20.4 650 145 165 TO-220F 1000
32 RSF65R130F N 26 650 115 130 TO-220F 1000
33 RSE70R600F N 7.3 700 520 600 TO-220F 1000
34 RSE70R420F N 11 700 365 420 TO-220F 1000
35 RSE70R360F N 12 700 315 360 TO-220F 1000
36 RSE80R850D N 7 800 740 850 TO-252 2500
37 RS80R500F N 9 800 420 500 TO-220F 1000
38 RSE80R380F N 13 800 330 380 TO-220F 1000
39 RSE80R250F N 18 800 220 250 TO-220F 1000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

High Frequency MOSFET Based On The National Military Standard Production Line

 

Product Description:

Silicon Carbide MOSFET is a type of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) that is made of silicon carbide material and is used for high power and high frequency applications. It is an advanced version of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) that provides much higher power handling capabilities and improved efficiency compared to traditional silicon-based MOSFETs. This type of transistor has a wide range of applications, such as power converters, motor drives, inverters, and other high-power electronics. Silicon Carbide MOSFETs are also used in various industrial and consumer electronics, including power supplies, cell phones, computers, and other electronic equipment. They provide superior performance in terms of power handling, heat dissipation, and reliability. Silicon Carbide MOSFETs are an excellent solution for high power and high frequency applications.

 

Technical Parameters:

Advantages Type Product name Resistance Device Type Material Efficiency Power Frequency Application
Based on the national military standard production line, the process is stable and the quality is reliable N Silicon Carbide MOSFET Low On Resistance MOSFET Silicon Carbide High Efficiency High Power High Frequency Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc.
 

Applications:

REASUNOS silicon carbide MOSFETs, based on SiC metal-oxide-semiconductor, have many advantages over traditional silicon MOSFETs, such as high power, low on resistance, and high frequency. The brand originates from Guangdong, China and the minimum order quantity is 600. The price is based on the product and it is offered with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The delivery time is 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance(EXW) and the supply ability is 5KK/month. SiC MOSFETs offer high power, low on resistance, and high frequency, making them ideal for applications such as electric vehicles, industrial applications, and renewable energy.

 

Support and Services:

Silicon Carbide MOSFET Technical Support and Services

Silicon Carbide MOSFET products require specialized technical support and services, tailored to meet the needs of each individual customer. Our team of highly experienced technical support professionals provide a wide range of services, from initial product selection and design assistance, to troubleshooting and repair. Our services include:

  • Product selection and design assistanceto identify the best solution for your application
  • Troubleshooting and repairservices to quickly resolve any problems
  • Post-sales technical support toanswer any questions and provide guidance
  • Training and workshops to helpyou get the most out of your products

We are committed to providing you with the highest level of technical support and services to ensure your success. If you have any questions or need assistance, please don’t hesitate to contact us.

 

Packing and Shipping:

Packaging and Shipping of Silicon Carbide MOSFET

Silicon Carbide MOSFET is packaged and shipped in a special container to protect the device from any damage during shipment. The container is filled with foam to provide cushioning for the device during transportation. The container is then sealed and labeled with the product name, weight, and dimensions.

The product is shipped via air freight, sea freight, or ground transportation depending on the customer's preference and location. The shipping cost will vary depending on the shipping method chosen. All orders must be placed through a licensed carrier and insured for the full value of the shipment.

The package should arrive in perfect condition and should be checked for any damage or defects before use. If any problems occur, please contact us immediately.

 

FAQ:

Q: What is the brand name of the Silicon Carbide MOSFET?
A: The brand name of the Silicon Carbide MOSFET is REASUNOS.
Q: What is the place of origin of the Silicon Carbide MOSFET?
A: The place of origin of the Silicon Carbide MOSFET is Guangdong, CN.
Q: What is the minimum order quantity for the Silicon Carbide MOSFET?
A: The minimum order quantity for the Silicon Carbide MOSFET is 600.
Q: What is the price of the Silicon Carbide MOSFET?
A: The price of the Silicon Carbide MOSFET is Confirm price based on product.
Q: How is the Silicon Carbide MOSFET packaged?
A: The Silicon Carbide MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Tags:

Practical Automotive Sic Mosfet

N Type Sic Power Mosfet

Automotive Silicon Carbide MOSFET