Industrial Super Junction MOSFET N Channel Multi Layer Process
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |

Contact me for free samples and coupons.
Whatsapp:0086 18588475571
Wechat: 0086 18588475571
Skype: sales10@aixton.com
If you have any concern, we provide 24-hour online help.
xInternal Resistance | Ultra Small Internal Resistance | Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
---|---|---|---|
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities | EMI Margin | Large EMI Margin |
Capacitance | Ultra-low Junction Capacitance | Package | Ultra Small Package |
Type | N | Device Type | Power Discrete Devices |
Highlight | Industrial Super Junction MOSFET,Super Junction MOSFET N Channel,Multi Layer Mosfet N Channel |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSE60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
2 | RSE60R190S | N | 17.6 | 600 | 165 | 190 | TO-263 | 800 | |
3 | RSE60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
4 | RSF60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
5 | RSF60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
6 | RS60R130F | N | 30 | 600 | 110 | 130 | TO-220F | 1000 | |
7 | RS60R130W | N | 30 | 600 | 110 | 130 | TO247-3 | 600 | |
8 | RSF60R099F | N | 31 | 600 | 86 | 99 | TO-220F | 1000 | |
9 | RSF60R099W | N | 31 | 600 | 86 | 99 | TO247-3 | 600 | |
10 | RSF60R070W | N | 45 | 600 | 61 | 70 | TO247-3 | 600 | |
11 | RSF60R041W | N | 70 | 600 | 35 | 41 | TO247-3 | 600 | |
12 | RSF60R070F | N | 48 | 600 | 58 | 68 | TO-220F | 1000 | |
13 | RSF60R026W | N | 100 | 600 | 20 | 26 | TO247-3 | 600 | |
14 | RSU4N65D | N | 4 | 650 | 880 | 1000 | TO-252 | 2500 | |
15 | RSU7N65D | N | 7 | 650 | 560 | 650 | TO-252 | 2500 | |
16 | RSU7N65F | N | 7 | 650 | 560 | 650 | TO-220F | 1000 | |
17 | RS65R600D | N | 7.3 | 650 | 520 | 600 | TO-252 | 2500 | |
18 | RS65R600F | N | 7.3 | 650 | 520 | 600 | TO-220F | 1000 | |
19 | RSE65R550D | N | 7.6 | 650 | 480 | 550 | TO-252 | 2500 | |
20 | RSU12N65F | N | 12 | 650 | 380 | 420 | TO-220F | 1000 | |
21 | RS65R380D | N | 11 | 650 | 340 | 380 | TO-252 | 2500 | |
22 | RS65R380F | N | 11 | 650 | 340 | 380 | TO-220F | 1000 | |
23 | RS65R280D | N | 15 | 650 | 240 | 280 | TO-252 | 2500 | |
24 | RS65R280F | N | 15 | 650 | 240 | 280 | TO-220F | 1000 | |
25 | RSE65R210F | N | 16.8 | 650 | 185 | 210 | TO-220F | 1000 | |
26 | RS65R190F | N | 20 | 650 | 160 | 190 | TO-220F | 1000 | |
27 | RS65R190S | N | 20 | 650 | 160 | 190 | TO-263 | 800 | |
28 | RS65R190T | N | 20 | 650 | 160 | 190 | TO-220 | 1000 | |
29 | RSF65R190T | N | 20 | 650 | 170 | 190 | TO-220 | 1000 | |
30 | RSE65R180F | N | 22 | 650 | 150 | 180 | TO-220F | 1000 | |
31 | RSE65R165F | N | 20.4 | 650 | 145 | 165 | TO-220F | 1000 | |
32 | RSF65R130F | N | 26 | 650 | 115 | 130 | TO-220F | 1000 | |
33 | RSE70R600F | N | 7.3 | 700 | 520 | 600 | TO-220F | 1000 | |
34 | RSE70R420F | N | 11 | 700 | 365 | 420 | TO-220F | 1000 | |
35 | RSE70R360F | N | 12 | 700 | 315 | 360 | TO-220F | 1000 | |
36 | RSE80R850D | N | 7 | 800 | 740 | 850 | TO-252 | 2500 | |
37 | RS80R500F | N | 9 | 800 | 420 | 500 | TO-220F | 1000 | |
38 | RSE80R380F | N | 13 | 800 | 330 | 380 | TO-220F | 1000 | |
39 | RSE80R250F | N | 18 | 800 | 220 | 250 | TO-220F | 1000 |
N Type Super Junction Metal Oxide Field Effect Transistor with Ultra Small Internal Resistance
Product Description:
Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a new generation of power device. It is made by advanced multi-layer epitaxy process. Compared with trench process, it has excellent anti EMI and anti surge capabilities, thus making it the ideal choice for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment. Its remarkable features include ultra-low junction capacitance, large EMI margin and ultra small internal resistance.
Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a great choice for applications where large EMI margin and ultra-low junction capacitance are desired. Its multi-layer epitaxy process and anti EMI and anti surge capabilities make it suitable for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment. Moreover, its ultra small internal resistance further enhances its performance.
In conclusion, Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a highly advanced power device with extraordinary features. Its ultra-low junction capacitance, large EMI margin, anti EMI and anti surge capabilities, and ultra small internal resistance make it the ideal choice for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment.
Technical Parameters:
Parameter | Value |
---|---|
Product Name | Super Junction MOSFET (SJ MOSFET) |
EMI margin | Large EMI Margin |
Capacitance | Ultra-low Junction Capacitance |
Package | Ultra Small Package |
Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc. |
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities. |
Internal Resistance | Ultra Small Internal Resistance |
Device Type | Power Discrete Devices |
Type | N |
Applications:
REASUNOS, an internationally recognized brand, is proud to offer its Super Junction Metal Oxide Field Effect Transistors (MOSFETs) as the ideal solution for power discrete devices. This Si super junction MOSFET is made using a multi-layer epitaxy process, which allows for excellent anti-EMI and anti-surge capabilities. Additionally, REASUNOS Si super junction MOSFETs also feature ultra-low junction capacitance and ultra-small internal resistance.
These devices are available in an ultra-small package, and are priced competitively at a price that is tailored to each individual product. Shipping and delivery is swift, with orders usually delivered within two to thirty days depending on the quantity. REASUNOS Super Junction MOSFETs come with dustproof, waterproof and anti-static tubular packaging, which is placed inside a cardboard box in cartons. Payment is required in advance and is accepted through T/T. REASUNOS guarantees a supply of up to 5,000,000 units of the Super Junction MOSFETs per month.
Support and Services:
We are dedicated to providing comprehensive technical support and service for Super Junction MOSFET. Our team of experienced engineers is available to provide help with product selection, design evaluation, and troubleshooting. We also offer in-depth technical resources and design tools to facilitate customer design reviews. Our experienced sales team is available to assist in product selection and provide technical support. We also provide a variety of educational resources to help customers stay up to date with the latest technology and design trends.
Packing and Shipping:
Super Junction MOSFETs are usually shipped in standard plastic packaging, which can provide good protection against dust, moisture, and other environmental elements. The packaging should be designed to protect the device from any mechanical shock or damage during transport. The packages should also be clearly labeled with the manufacturer's name and product name.
The shipping method should be chosen based on the size and weight of the Super Junction MOSFET. Smaller packages can be sent via air or courier services, while larger packages should be sent via ground transportation. The shipping method should be chosen based on the delivery time and cost.
FAQ:
Q: What is a Super Junction MOSFET?
A: A Super Junction MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that has been designed for high-voltage power switch applications. It is manufactured by REASUNOS and is available in various sizes and packages.
Q: What is the origin of REASUNOS Super Junction MOSFET?
A: REASUNOS Super Junction MOSFET is a product of Guangdong, China.
Q: What is the price of the Super Junction MOSFET?
A: The price of Super Junction MOSFET depends on the product. Please contact us for more information.
Q: How is Super Junction MOSFET packaged?
A: Super Junction MOSFET is packaged in dustproof, waterproof and anti-static tubular packaging and placed inside a cardboard box in cartons.
Q: How long does delivery take for Super Junction MOSFET?
A: Delivery time for Super Junction MOSFET ranges from 2 to 30 days, depending on the total quantity.