Industrial Super Junction MOSFET N Channel Multi Layer Process

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Internal Resistance Ultra Small Internal Resistance Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities EMI Margin Large EMI Margin
Capacitance Ultra-low Junction Capacitance Package Ultra Small Package
Type N Device Type Power Discrete Devices
Highlight

Industrial Super Junction MOSFET

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Super Junction MOSFET N Channel

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Multi Layer Mosfet N Channel

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSE60R190F N 17.6 600 165 190 TO-220F 1000
2 RSE60R190S N 17.6 600 165 190 TO-263 800
3 RSE60R150F N 22 600 130 150 TO-220F 1000
4 RSF60R150F N 22 600 130 150 TO-220F 1000
5 RSF60R190F N 17.6 600 165 190 TO-220F 1000
6 RS60R130F N 30 600 110 130 TO-220F 1000
7 RS60R130W N 30 600 110 130 TO247-3 600
8 RSF60R099F N 31 600 86 99 TO-220F 1000
9 RSF60R099W N 31 600 86 99 TO247-3 600
10 RSF60R070W N 45 600 61 70 TO247-3 600
11 RSF60R041W N 70 600 35 41 TO247-3 600
12 RSF60R070F N 48 600 58 68 TO-220F 1000
13 RSF60R026W N 100 600 20 26 TO247-3 600
14 RSU4N65D N 4 650 880 1000 TO-252 2500
15 RSU7N65D N 7 650 560 650 TO-252 2500
16 RSU7N65F N 7 650 560 650 TO-220F 1000
17 RS65R600D N 7.3 650 520 600 TO-252 2500
18 RS65R600F N 7.3 650 520 600 TO-220F 1000
19 RSE65R550D N 7.6 650 480 550 TO-252 2500
20 RSU12N65F N 12 650 380 420 TO-220F 1000
21 RS65R380D N 11 650 340 380 TO-252 2500
22 RS65R380F N 11 650 340 380 TO-220F 1000
23 RS65R280D N 15 650 240 280 TO-252 2500
24 RS65R280F N 15 650 240 280 TO-220F 1000
25 RSE65R210F N 16.8 650 185 210 TO-220F 1000
26 RS65R190F N 20 650 160 190 TO-220F 1000
27 RS65R190S N 20 650 160 190 TO-263 800
28 RS65R190T N 20 650 160 190 TO-220 1000
29 RSF65R190T N 20 650 170 190 TO-220 1000
30 RSE65R180F N 22 650 150 180 TO-220F 1000
31 RSE65R165F N 20.4 650 145 165 TO-220F 1000
32 RSF65R130F N 26 650 115 130 TO-220F 1000
33 RSE70R600F N 7.3 700 520 600 TO-220F 1000
34 RSE70R420F N 11 700 365 420 TO-220F 1000
35 RSE70R360F N 12 700 315 360 TO-220F 1000
36 RSE80R850D N 7 800 740 850 TO-252 2500
37 RS80R500F N 9 800 420 500 TO-220F 1000
38 RSE80R380F N 13 800 330 380 TO-220F 1000
39 RSE80R250F N 18 800 220 250 TO-220F 1000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

N Type Super Junction Metal Oxide Field Effect Transistor with Ultra Small Internal Resistance

Product Description:

Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a new generation of power device. It is made by advanced multi-layer epitaxy process. Compared with trench process, it has excellent anti EMI and anti surge capabilities, thus making it the ideal choice for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment. Its remarkable features include ultra-low junction capacitance, large EMI margin and ultra small internal resistance.

Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a great choice for applications where large EMI margin and ultra-low junction capacitance are desired. Its multi-layer epitaxy process and anti EMI and anti surge capabilities make it suitable for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment. Moreover, its ultra small internal resistance further enhances its performance.

In conclusion, Super Junction Metal Oxide Field Effect Transistor (super mosfet) is a highly advanced power device with extraordinary features. Its ultra-low junction capacitance, large EMI margin, anti EMI and anti surge capabilities, and ultra small internal resistance make it the ideal choice for LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, and new energy power equipment.

 

Technical Parameters:

Parameter Value
Product Name Super Junction MOSFET (SJ MOSFET)
EMI margin Large EMI Margin
Capacitance Ultra-low Junction Capacitance
Package Ultra Small Package
Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc.
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities.
Internal Resistance Ultra Small Internal Resistance
Device Type Power Discrete Devices
Type N
 

Applications:

REASUNOS Super Junction MOSFETs: An Ideal Solution for Power Discrete Devices

REASUNOS, an internationally recognized brand, is proud to offer its Super Junction Metal Oxide Field Effect Transistors (MOSFETs) as the ideal solution for power discrete devices. This Si super junction MOSFET is made using a multi-layer epitaxy process, which allows for excellent anti-EMI and anti-surge capabilities. Additionally, REASUNOS Si super junction MOSFETs also feature ultra-low junction capacitance and ultra-small internal resistance.

These devices are available in an ultra-small package, and are priced competitively at a price that is tailored to each individual product. Shipping and delivery is swift, with orders usually delivered within two to thirty days depending on the quantity. REASUNOS Super Junction MOSFETs come with dustproof, waterproof and anti-static tubular packaging, which is placed inside a cardboard box in cartons. Payment is required in advance and is accepted through T/T. REASUNOS guarantees a supply of up to 5,000,000 units of the Super Junction MOSFETs per month.

 

Support and Services:

We are dedicated to providing comprehensive technical support and service for Super Junction MOSFET. Our team of experienced engineers is available to provide help with product selection, design evaluation, and troubleshooting. We also offer in-depth technical resources and design tools to facilitate customer design reviews. Our experienced sales team is available to assist in product selection and provide technical support. We also provide a variety of educational resources to help customers stay up to date with the latest technology and design trends.

 

Packing and Shipping:

Packaging and Shipping of Super Junction MOSFET

Super Junction MOSFETs are usually shipped in standard plastic packaging, which can provide good protection against dust, moisture, and other environmental elements. The packaging should be designed to protect the device from any mechanical shock or damage during transport. The packages should also be clearly labeled with the manufacturer's name and product name.

The shipping method should be chosen based on the size and weight of the Super Junction MOSFET. Smaller packages can be sent via air or courier services, while larger packages should be sent via ground transportation. The shipping method should be chosen based on the delivery time and cost.

 

FAQ:

Q: What is a Super Junction MOSFET?
A: A Super Junction MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that has been designed for high-voltage power switch applications. It is manufactured by REASUNOS and is available in various sizes and packages.

Q: What is the origin of REASUNOS Super Junction MOSFET?
A: REASUNOS Super Junction MOSFET is a product of Guangdong, China.

Q: What is the price of the Super Junction MOSFET?
A: The price of Super Junction MOSFET depends on the product. Please contact us for more information.

Q: How is Super Junction MOSFET packaged?
A: Super Junction MOSFET is packaged in dustproof, waterproof and anti-static tubular packaging and placed inside a cardboard box in cartons.

Q: How long does delivery take for Super Junction MOSFET?
A: Delivery time for Super Junction MOSFET ranges from 2 to 30 days, depending on the total quantity.