Multipurpose SiC Schottky Barrier Diode Durable High Temperature Resistance
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
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xPower | High Power | Frequency | High Frequency |
---|---|---|---|
Heat Resistance | High Temperature Resistance | Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
Device Type | Power Discrete Devices | Material | Silicon Carbide |
Application | PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc | Product Name | Silicon Carbide SBD/SiC SBD |
High Light | Multipurpose SiC Schottky Barrier Diode,SiC Schottky Barrier Diode Durable,Temperature Resistance Diode Schottky Barrier |
No. | Part No. | VF(V)Typ (TA=25℃) | IF(A)TC=145℃(TA=25℃) | Typ IR(µA)(TA=25℃) | VR(V)(TA=25℃) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|
1 | RSS04065D | 1.4 | 4 | 1 | 650 | TO-252 | 2500 | |
2 | RSS04065G | 1.4 | 4 | 1 | 650 | DFN5*6 | 5000 | |
3 | RSS04065A | 1.4 | 4 | 1 | 650 | TO-220-2L | 1000 | |
4 | RSS04065B | 1.4 | 4 | 1 | 650 | TO-220Internal insulation | 1000 | |
5 | RSS06065D | 1.36 | 6 | 1.2 | 650 | TO-252 | 2500 | |
6 | RSS06065G | 1.36 | 6 | 1.2 | 650 | DFN5*6 | 5000 | |
7 | RSS06065R | 1.36 | 6 | 1.2 | 650 | DFN8*8 | 260 | |
8 | RSS06065S | 1.36 | 6 | 1.2 | 650 | TO-263 | 800 | |
9 | RSS06065A | 1.36 | 6 | 1.2 | 650 | TO-220-2L | 1000 | |
10 | RSS06065B | 1.36 | 6 | 1.2 | 650 | TO-220Internal insulation | 1000 | |
11 | RSS08065D | 1.39 | 8 | 6 | 650 | TO-252 | 2500 | |
12 | RSS08065G | 1.39 | 8 | 6 | 650 | DFN5*6 | 5000 | |
13 | RSS08065R | 1.39 | 8 | 6 | 650 | DFN8*8 | 260 | |
14 | RSS08065S | 1.39 | 8 | 6 | 650 | TO-263 | 800 | |
15 | RSS08065A | 1.39 | 8 | 6 | 650 | TO-220-2L | 1000 | |
16 | RSS08065B | 1.39 | 8 | 6 | 650 | TO-220Internal insulation | 1000 | |
17 | RSS10065D | 1.37 | 10 | 5 | 650 | TO-252 | 2500 | |
18 | RSS10065R | 1.37 | 10 | 5 | 650 | DFN8*8 | 260 | |
19 | RSS10065S | 1.37 | 10 | 5 | 650 | TO-263 | 800 | |
20 | RSS10065A | 1.37 | 10 | 5 | 650 | TO-220-2L | 1000 | |
21 | RSS10065B | 1.37 | 10 | 5 | 650 | TO-220Internal insulation | 1000 | |
22 | RSS15065A | 1.4 | 15 | 2 | 650 | TO-220-2L | 1000 | |
23 | RSS20065A | 1.35 | 20 | 6 | 650 | TO-220-2L | 1000 | |
24 | RSS20065W | 1.45 | 20 | 5 | 650 | TO-247-2L | 600 | |
25 | RSS20065K | 1.37 | 20 | 5 | 650 | TO-247-3L | 600 | |
26 | RSS30065W | 1.5 | 30 | 2 | 650 | TO-247-2L | 600 | |
27 | RSS30065K | 1.4 | 30 | 1 | 650 | TO-247-3L | 600 | |
28 | RSS40065K | 1.35 | 40 | 6 | 650 | TO-247-3L | 600 | |
29 | RSS50065W | 1.5 | 50 | 2 | 650 | TO-247-2L | 600 | |
30 | RSS60065K | 1.5 | 60 | 2 | 650 | TO-247-3L | 600 | |
31 | RSS02120D | 1.38 | 2 | 1 | 1200 | TO-252 | 2500 | |
32 | RSS10120A | 1.43 | 10 | 2 | 1200 | TO-220-2L | 1000 | |
33 | RSS10120W | 1.43 | 10 | 2 | 1200 | TO-247-2L | 600 | |
34 | RSS15120W | 1.55 | 15 | 5 | 1200 | TO-247-2L | 600 | |
35 | RSS20120W | 1.45 | 20 | 2 | 1200 | TO-247-2L | 600 | |
36 | RSS20120K | 1.45 | 20 | 2 | 1200 | TO-247-3L | 600 | |
37 | RSS30120W | 1.5 | 30 | 5 | 1200 | TO-247-2L | 600 | |
38 | RSS30120K | 1.55 | 30 | 5 | 1200 | TO-247-3L | 600 | |
39 | RSS40120K | 1.45 | 40 | 2 | 1200 | TO-247-3L | 600 | |
40 | RSS40120W | 1.45 | 40 | 2 | 1200 | TO-247-2L | 600 | |
41 | RSS50120W | 1.4 | 50 | 30 | 1200 | TO-247-2L | 600 | |
42 | RSS25170W | 1.55 | 25 | 5 | 1700 | TO-247-2L | 600 | |
43 | RSS10200W | 1.45 | 10 | 8 | 2000 | TO-247-2L | 600 |
Sic Schottky Barrier Diode with Strong Anti Surge Current Ability
Product Description:
Silicon Carbide Barrier Diode (Silicon Carbide SBD) is a power discrete device made from silicon carbide material. It is characterized by extremely low reverse recovery current, strong anti surge current ability and high efficiency. Silicon Carbide SBD is designed to operate in high temperature environments and is a great choice for various power applications. It has excellent thermal conductivity, low thermal resistance, and high breakdown voltage, making it ideal for high temperature operations. Additionally, its high efficiency and low reverse recovery current mean that it consumes less energy and reduces energy losses. It also offers higher thermal conductivity, improved thermal stability, and greater reliability in comparison to other materials. With all these features, Silicon Carbide SBD is an ideal solution for high temperature, power applications.
Technical Parameters:
Product Name | Characteristics |
---|---|
Silicon Carbide SBD/Sic SBD | High Temperature Resistance, High Power, Power Discrete Devices, High Efficiency, Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable, High Frequency, Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability. |
Application | Material |
PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc | Silicon Carbide |
Applications:
REASUNOS' Silicon Carbide SBD (SiC SBD) is a power discrete device with a Schottky Rectifier Diode structure. It has a wide range of applications, such as PFC Circuit, DC/AC Inverter for Solar and Wind Power Generation, UPS Power Supply and Motor Driver. With a high frequency and high power capability, this device is ideal for high efficiency and energy-saving power systems. It has a Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The price is based on the product and the delivery time is between 2-30 days, depending on the total quantity. The supply ability is 5KK/month. The payment term is 100% T/T in Advance(EXW).
Support and Services:
We provide comprehensive technical support and service for our Silicon Carbide SBD products. Our team of highly-trained engineers are available to help you with any technical questions or queries that you may have. We can provide detailed documentation, technical support, and assistance in troubleshooting any issues that may arise.
Our customer service staff are available 24/7 to answer any questions or concerns you may have. We can help you with selecting the right product for your needs, provide advice on installation and maintenance, and answer any questions you might have about our Silicon Carbide SBD products.
We are committed to providing the highest quality of service and support for our customers. We strive to make sure that your experience with our Silicon Carbide SBD products is as smooth and trouble-free as possible.
Packing and Shipping:
Silicon Carbide SBD products are packaged and shipped in a safe and secure manner. All packages are clearly labeled with the product name and a description of the contents. The package is then sealed and wrapped in protective material to ensure its safe arrival.
The packages are shipped using a reliable courier service or by air cargo, depending on the quantity and destination. All packages are tracked and insured for maximum security and peace of mind. Shipping fees may vary depending on the weight and destination.
FAQ:
A1: Silicon Carbide SBD is a high-quality semiconductor substrate from REASUNOS, with a place of origin in Guangdong, China.
A2: The price of Silicon Carbide SBD is based on the product, please contact us for more details.
A3: Silicon Carbide SBD is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
A4: The delivery time of Silicon Carbide SBD depends on the total quantity. It usually takes 2-30 days.
A5: The payment terms of Silicon Carbide SBD is 100% T/T in Advance(EXW).