Multipurpose SiC Schottky Barrier Diode Durable High Temperature Resistance

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Power High Power Frequency High Frequency
Heat Resistance High Temperature Resistance Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Device Type Power Discrete Devices Material Silicon Carbide
Application PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc Product Name Silicon Carbide SBD/SiC SBD
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Multipurpose SiC Schottky Barrier Diode

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SiC Schottky Barrier Diode Durable

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Temperature Resistance Diode Schottky Barrier

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No. Part No. VF(V)Typ (TA=25℃) IF(A)TC=145℃(TA=25℃) Typ IR(µA)(TA=25℃) VR(V)(TA=25℃) Package MOQ(pcs)
1 RSS04065D 1.4 4 1 650 TO-252 2500
2 RSS04065G 1.4 4 1 650 DFN5*6 5000
3 RSS04065A 1.4 4 1 650 TO-220-2L 1000
4 RSS04065B 1.4 4 1 650 TO-220Internal insulation 1000
5 RSS06065D 1.36 6 1.2 650 TO-252 2500
6 RSS06065G 1.36 6 1.2 650 DFN5*6 5000
7 RSS06065R 1.36 6 1.2 650 DFN8*8 260
8 RSS06065S 1.36 6 1.2 650 TO-263 800
9 RSS06065A 1.36 6 1.2 650 TO-220-2L 1000
10 RSS06065B 1.36 6 1.2 650 TO-220Internal insulation 1000
11 RSS08065D 1.39 8 6 650 TO-252 2500
12 RSS08065G 1.39 8 6 650 DFN5*6 5000
13 RSS08065R 1.39 8 6 650 DFN8*8 260
14 RSS08065S 1.39 8 6 650 TO-263 800
15 RSS08065A 1.39 8 6 650 TO-220-2L 1000
16 RSS08065B 1.39 8 6 650 TO-220Internal insulation 1000
17 RSS10065D 1.37 10 5 650 TO-252 2500
18 RSS10065R 1.37 10 5 650 DFN8*8 260
19 RSS10065S 1.37 10 5 650 TO-263 800
20 RSS10065A 1.37 10 5 650 TO-220-2L 1000
21 RSS10065B 1.37 10 5 650 TO-220Internal insulation 1000
22 RSS15065A 1.4 15 2 650 TO-220-2L 1000
23 RSS20065A 1.35 20 6 650 TO-220-2L 1000
24 RSS20065W 1.45 20 5 650 TO-247-2L 600
25 RSS20065K 1.37 20 5 650 TO-247-3L 600
26 RSS30065W 1.5 30 2 650 TO-247-2L 600
27 RSS30065K 1.4 30 1 650 TO-247-3L 600
28 RSS40065K 1.35 40 6 650 TO-247-3L 600
29 RSS50065W 1.5 50 2 650 TO-247-2L 600
30 RSS60065K 1.5 60 2 650 TO-247-3L 600
31 RSS02120D 1.38 2 1 1200 TO-252 2500
32 RSS10120A 1.43 10 2 1200 TO-220-2L 1000
33 RSS10120W 1.43 10 2 1200 TO-247-2L 600
34 RSS15120W 1.55 15 5 1200 TO-247-2L 600
35 RSS20120W 1.45 20 2 1200 TO-247-2L 600
36 RSS20120K 1.45 20 2 1200 TO-247-3L 600
37 RSS30120W 1.5 30 5 1200 TO-247-2L 600
38 RSS30120K 1.55 30 5 1200 TO-247-3L 600
39 RSS40120K 1.45 40 2 1200 TO-247-3L 600
40 RSS40120W 1.45 40 2 1200 TO-247-2L 600
41 RSS50120W 1.4 50 30 1200 TO-247-2L 600
42 RSS25170W 1.55 25 5 1700 TO-247-2L 600
43 RSS10200W 1.45 10 8 2000 TO-247-2L 600
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No. Part No. VF(V)Typ (TA=25℃) IF(A)TC=145℃(TA=25℃) Typ IR(µA)(TA=25℃) VR(V)(TA=25℃) Package MOQ(pcs)
Product Description

Sic Schottky Barrier Diode with Strong Anti Surge Current Ability

Product Description:

Silicon Carbide Barrier Diode (Silicon Carbide SBD) is a power discrete device made from silicon carbide material. It is characterized by extremely low reverse recovery current, strong anti surge current ability and high efficiency. Silicon Carbide SBD is designed to operate in high temperature environments and is a great choice for various power applications. It has excellent thermal conductivity, low thermal resistance, and high breakdown voltage, making it ideal for high temperature operations. Additionally, its high efficiency and low reverse recovery current mean that it consumes less energy and reduces energy losses. It also offers higher thermal conductivity, improved thermal stability, and greater reliability in comparison to other materials. With all these features, Silicon Carbide SBD is an ideal solution for high temperature, power applications.

 

Technical Parameters:

Product Name Characteristics
Silicon Carbide SBD/Sic SBD High Temperature Resistance, High Power, Power Discrete Devices, High Efficiency, Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable, High Frequency, Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability.
Application Material
PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc Silicon Carbide
 

Applications:

REASUNOS' Silicon Carbide SBD (SiC SBD) is a power discrete device with a Schottky Rectifier Diode structure. It has a wide range of applications, such as PFC Circuit, DC/AC Inverter for Solar and Wind Power Generation, UPS Power Supply and Motor Driver. With a high frequency and high power capability, this device is ideal for high efficiency and energy-saving power systems. It has a Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The price is based on the product and the delivery time is between 2-30 days, depending on the total quantity. The supply ability is 5KK/month. The payment term is 100% T/T in Advance(EXW).

 

Support and Services:

Silicon Carbide SBD Technical Support and Service

We provide comprehensive technical support and service for our Silicon Carbide SBD products. Our team of highly-trained engineers are available to help you with any technical questions or queries that you may have. We can provide detailed documentation, technical support, and assistance in troubleshooting any issues that may arise.

Our customer service staff are available 24/7 to answer any questions or concerns you may have. We can help you with selecting the right product for your needs, provide advice on installation and maintenance, and answer any questions you might have about our Silicon Carbide SBD products.

We are committed to providing the highest quality of service and support for our customers. We strive to make sure that your experience with our Silicon Carbide SBD products is as smooth and trouble-free as possible.

 

Packing and Shipping:

Silicon Carbide SBD products are packaged and shipped in a safe and secure manner. All packages are clearly labeled with the product name and a description of the contents. The package is then sealed and wrapped in protective material to ensure its safe arrival.

The packages are shipped using a reliable courier service or by air cargo, depending on the quantity and destination. All packages are tracked and insured for maximum security and peace of mind. Shipping fees may vary depending on the weight and destination.

 

FAQ:

Q1: What is Silicon Carbide SBD?
A1: Silicon Carbide SBD is a high-quality semiconductor substrate from REASUNOS, with a place of origin in Guangdong, China.
Q2: What is the price of Silicon Carbide SBD?
A2: The price of Silicon Carbide SBD is based on the product, please contact us for more details.
Q3: How is Silicon Carbide SBD packaged?
A3: Silicon Carbide SBD is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q4: How long is the delivery time of Silicon Carbide SBD?
A4: The delivery time of Silicon Carbide SBD depends on the total quantity. It usually takes 2-30 days.
Q5: What is the payment terms of Silicon Carbide SBD?
A5: The payment terms of Silicon Carbide SBD is 100% T/T in Advance(EXW).