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Inverter Durable SiC Schottky Barrier Diode , Heat Resistance Mosfet SBD

  • Inverter Durable SiC Schottky Barrier Diode , Heat Resistance Mosfet SBD
Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Heat Resistance High Temperature Resistance Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Application PFC Circuit , DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc Efficiency High Efficiency
Frequency High Frequency Material Silicon Carbide
Device Type Power Discrete Devices Characteristics Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability
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Inverter SiC Schottky Barrier Diode

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Durable SiC Schottky Barrier Diode

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Heat Resistance Mosfet SBD
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No. Part No. VF（V）Typ (TA=25℃) IF（A）TC=145℃(TA=25℃) Typ IR（µA）(TA=25℃) VR（V）(TA=25℃) Package MOQ(pcs)
1 RSS04065D 1.4 4 1 650 TO-252 2500
2 RSS04065G 1.4 4 1 650 DFN5*6 5000
3 RSS04065A 1.4 4 1 650 TO-220-2L 1000
4 RSS04065B 1.4 4 1 650 TO-220Internal insulation 1000
5 RSS06065D 1.36 6 1.2 650 TO-252 2500
6 RSS06065G 1.36 6 1.2 650 DFN5*6 5000
7 RSS06065R 1.36 6 1.2 650 DFN8*8 260
8 RSS06065S 1.36 6 1.2 650 TO-263 800
9 RSS06065A 1.36 6 1.2 650 TO-220-2L 1000
10 RSS06065B 1.36 6 1.2 650 TO-220Internal insulation 1000
11 RSS08065D 1.39 8 6 650 TO-252 2500
12 RSS08065G 1.39 8 6 650 DFN5*6 5000
13 RSS08065R 1.39 8 6 650 DFN8*8 260
14 RSS08065S 1.39 8 6 650 TO-263 800
15 RSS08065A 1.39 8 6 650 TO-220-2L 1000
16 RSS08065B 1.39 8 6 650 TO-220Internal insulation 1000
17 RSS10065D 1.37 10 5 650 TO-252 2500
18 RSS10065R 1.37 10 5 650 DFN8*8 260
19 RSS10065S 1.37 10 5 650 TO-263 800
20 RSS10065A 1.37 10 5 650 TO-220-2L 1000
21 RSS10065B 1.37 10 5 650 TO-220Internal insulation 1000
22 RSS15065A 1.4 15 2 650 TO-220-2L 1000
23 RSS20065A 1.35 20 6 650 TO-220-2L 1000
24 RSS20065W 1.45 20 5 650 TO-247-2L 600
25 RSS20065K 1.37 20 5 650 TO-247-3L 600
26 RSS30065W 1.5 30 2 650 TO-247-2L 600
27 RSS30065K 1.4 30 1 650 TO-247-3L 600
28 RSS40065K 1.35 40 6 650 TO-247-3L 600
29 RSS50065W 1.5 50 2 650 TO-247-2L 600
30 RSS60065K 1.5 60 2 650 TO-247-3L 600
31 RSS02120D 1.38 2 1 1200 TO-252 2500
32 RSS10120A 1.43 10 2 1200 TO-220-2L 1000
33 RSS10120W 1.43 10 2 1200 TO-247-2L 600
34 RSS15120W 1.55 15 5 1200 TO-247-2L 600
35 RSS20120W 1.45 20 2 1200 TO-247-2L 600
36 RSS20120K 1.45 20 2 1200 TO-247-3L 600
37 RSS30120W 1.5 30 5 1200 TO-247-2L 600
38 RSS30120K 1.55 30 5 1200 TO-247-3L 600
39 RSS40120K 1.45 40 2 1200 TO-247-3L 600
40 RSS40120W 1.45 40 2 1200 TO-247-2L 600
41 RSS50120W 1.4 50 30 1200 TO-247-2L 600
42 RSS25170W 1.55 25 5 1700 TO-247-2L 600
43 RSS10200W 1.45 10 8 2000 TO-247-2L 600
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No. Part No. VF（V）Typ (TA=25℃) IF（A）TC=145℃(TA=25℃) Typ IR（µA）(TA=25℃) VR（V）(TA=25℃) Package MOQ(pcs)
Product Description

Power Discrete Devices Silicon Carbide SBD Based On National Military Standard Production Line

Product Description:

Silicon Carbide Barrier Diodes (SiC SBD) are power discrete devices with extremely low reverse recovery current and strong anti surge current ability. These devices can work stably in high temperature conditions and are mainly used in PFC circuits, DC/AC inverters for solar and wind power generation, UPS power supplies, motor drivers, etc. With the excellent features of Silicon Carbide Schottky Barrier Rectifier Diode (SiC SBD), it can provide better power conversion efficiency, fast switching speed and higher temperature stability. In addition, the high temperature resistance of Silicon Carbide Barrier Diode (SiC SBD) can ensure the safety and reliability of the device in extreme temperature conditions, making it an ideal choice for applications in harsh environment.

 

Technical Parameters:

Property Description
Material Silicon Carbide
Application PFC Circuit, DC/AC Inverter For Solar And Wind Power Generation, UPS Power Supply, Motor Driver, Etc
Product Name Silicon Carbide Schottky Diode, Silicon Carbide SBD, Silicon Carbide Barrier Diode
Frequency High Frequency
Heat Resistance High Temperature Resistance
Device Type Power Discrete Devices
Efficiency High Efficiency
Characteristics Extremely Low Reverse Recovery Current, Strong Anti Surge Current Ability
Power High Power
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
 

Applications:

Silicon Carbide Schottky Diode, commonly known as Sic SBD, is manufactured by REASUNOS and is widely used in power electronics applications due to its high power performance. It is made from a material called silicon carbide, which is a compound of silicon and carbon, and has superior properties to silicon such as higher power and better thermal conductivity. This makes it a great choice for applications which require high power, such as power converters and motor drives. It is also used in power discrete devices and can be found in many industrial equipment and electronic products. Thanks to its reliable quality and stable process from the national military standard production line, REASUNOS Silicon Carbide SBD is widely acknowledged and accepted in the industry.

REASUNOS Silicon Carbide SBD is packaged in dustproof, waterproof, and anti-static tubular packaging and placed inside a cardboard box in cartons. It is available at a competitive price, and the delivery time typically takes 2 to 30 days depending on the total quantity. Payment terms are 100% T/T in advance (EXW). The supply capacity is 5KK/month.

 

Support and Services:

Silicon Carbide SBD provides a wide range of technical support and services to ensure that your product is running smoothly and efficiently. Our technical support team is available 24/7 to answer any questions you may have. We also offer a variety of services to assist you in optimizing your product, including troubleshooting, installation, and maintenance. Additionally, our experienced specialists can help you with any customization needs you may have. If you need any further assistance, our team is more than happy to provide it.

 

Packing and Shipping:

Silicon Carbide SBD Packaging and Shipping:

Each Silicon Carbide SBD is packaged and shipped in a separate box. The box contains the product and a set of instructions. The box is then sealed and labeled with the product's specifications. The box is then placed in a larger box with a packing material to protect it from any damage during transit. The larger box is then sealed and labeled with the product's specifications and the address of the recipient.

 

FAQ:

Q1: What is Silicon Carbide SBD? A1: Silicon Carbide SBD is a semiconductor material produced by REASUNOS, with a brand name of REASUNOS, which is located in Guangdong, China.
Q2: What is the price for Silicon Carbide SBD? A2: The price of Silicon Carbide SBD is based on the product, please contact us for more details.
Q3: How is Silicon Carbide SBD packaged? A3: Silicon Carbide SBD is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q4: How long is the delivery time for Silicon Carbide SBD? A4: The delivery time for Silicon Carbide SBD is 2-30 days, depending on the total quantity.
Q5: What is the payment terms for Silicon Carbide SBD? A5: The payment terms for Silicon Carbide SBD is 100% T/T in advance(EXW).
Tags:

Silicon Schottky Barrier Rectifier Diode

Multifunctional Super Barrier Diode

Silicon Carbide SBD Practical