All Products
Keywords [ high power mosfet ] match 182 Products.
Trench SGT Low Voltage MOSFET Practical Low On Resistance 30V 40V
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
|---|---|
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
N Channel Low Voltage MOSFET Stable High EAS For DC DC Converter
| Power Consumption: | Low Power Loss |
|---|---|
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| Product Name: | Low Voltage MOSFET |
Practical Low Voltage MOSFET Multifunctional N Channel Low Rds
| Structure Process: | Trench/SGT |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Converter Low Voltage MOSFET Multipurpose For Wireless Charging
| Structure Process: | Trench/SGT |
|---|---|
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Small RSP Low Voltage MOSFET Multi Scene N Channel Low Threshold
| EAS Capability: | High EAS Capability |
|---|---|
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
MBR2060CT MBR20100CT SBD Mosfet , Industrial Schottky Barrier Rectifier Diode
| Forward Voltage: | Low VF |
|---|---|
| Leakage: | Low Leakage |
| Application: | Display Screen Power Supply, Laptop Power Supply, Switching Power Supply, Etc |
Stable Super Junction Fet Multi Layer For New Energy Power Equipment
| Type: | N |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Internal Resistance: | Ultra Small Internal Resistance |
Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
|---|---|
| Resistance: | Low Rds(ON) |
| SGT Process Application: | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Stable Process Integrated Circuit Module With National Military Standard
| Anti Surge Current: | Srtong Ability Of Anti Surge Current |
|---|---|
| Temperature Resistance: | High-temperature Resistance |
| Advantages: | The National Military Standard Of China With Stable Process And Reliable Quality |
Metal Oxide Super Junction Transistor Multifunctional For Industry
| Internal Resistance: | Ultra Small Internal Resistance |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Product Name: | Super Junction MOSFET/SJ MOSTET |