Metal Oxide Super Junction Transistor Multifunctional For Industry
Place of Origin | Guangdong, CN |
---|---|
Brand Name | REASUNOS |
Price | Confirm price based on product |
Packaging Details | Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons |
Delivery Time | 2-30 days (Depends on Total Quantity) |
Payment Terms | 100% T/T in Advance(EXW) |
Supply Ability | 5KK/month |
Contact me for free samples and coupons.
Whatsapp:0086 18588475571
Wechat: 0086 18588475571
Skype: sales10@aixton.com
If you have any concern, we provide 24-hour online help.
xInternal Resistance | Ultra Small Internal Resistance | Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
---|---|---|---|
Product Name | Super Junction MOSFET/SJ MOSTET | Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Package | Ultra Small Package | Capacitance | Ultra-low Junction Capacitance |
Device Type | Power Discrete Devices | Type | N |
High Light | Metal Oxide Super Junction Transistor,Super Junction Transistor Multifunctional,Industry Metal Oxide Transistor |
No. | Part No. | Type | ID(A) | VDSS(V) | RDS(ON) Typ(mΩ) | RDS(ON) Max(mΩ) | Package | MOQ(pcs) | |
---|---|---|---|---|---|---|---|---|---|
1 | RSE60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
2 | RSE60R190S | N | 17.6 | 600 | 165 | 190 | TO-263 | 800 | |
3 | RSE60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
4 | RSF60R150F | N | 22 | 600 | 130 | 150 | TO-220F | 1000 | |
5 | RSF60R190F | N | 17.6 | 600 | 165 | 190 | TO-220F | 1000 | |
6 | RS60R130F | N | 30 | 600 | 110 | 130 | TO-220F | 1000 | |
7 | RS60R130W | N | 30 | 600 | 110 | 130 | TO247-3 | 600 | |
8 | RSF60R099F | N | 31 | 600 | 86 | 99 | TO-220F | 1000 | |
9 | RSF60R099W | N | 31 | 600 | 86 | 99 | TO247-3 | 600 | |
10 | RSF60R070W | N | 45 | 600 | 61 | 70 | TO247-3 | 600 | |
11 | RSF60R041W | N | 70 | 600 | 35 | 41 | TO247-3 | 600 | |
12 | RSF60R070F | N | 48 | 600 | 58 | 68 | TO-220F | 1000 | |
13 | RSF60R026W | N | 100 | 600 | 20 | 26 | TO247-3 | 600 | |
14 | RSU4N65D | N | 4 | 650 | 880 | 1000 | TO-252 | 2500 | |
15 | RSU7N65D | N | 7 | 650 | 560 | 650 | TO-252 | 2500 | |
16 | RSU7N65F | N | 7 | 650 | 560 | 650 | TO-220F | 1000 | |
17 | RS65R600D | N | 7.3 | 650 | 520 | 600 | TO-252 | 2500 | |
18 | RS65R600F | N | 7.3 | 650 | 520 | 600 | TO-220F | 1000 | |
19 | RSE65R550D | N | 7.6 | 650 | 480 | 550 | TO-252 | 2500 | |
20 | RSU12N65F | N | 12 | 650 | 380 | 420 | TO-220F | 1000 | |
21 | RS65R380D | N | 11 | 650 | 340 | 380 | TO-252 | 2500 | |
22 | RS65R380F | N | 11 | 650 | 340 | 380 | TO-220F | 1000 | |
23 | RS65R280D | N | 15 | 650 | 240 | 280 | TO-252 | 2500 | |
24 | RS65R280F | N | 15 | 650 | 240 | 280 | TO-220F | 1000 | |
25 | RSE65R210F | N | 16.8 | 650 | 185 | 210 | TO-220F | 1000 | |
26 | RS65R190F | N | 20 | 650 | 160 | 190 | TO-220F | 1000 | |
27 | RS65R190S | N | 20 | 650 | 160 | 190 | TO-263 | 800 | |
28 | RS65R190T | N | 20 | 650 | 160 | 190 | TO-220 | 1000 | |
29 | RSF65R190T | N | 20 | 650 | 170 | 190 | TO-220 | 1000 | |
30 | RSE65R180F | N | 22 | 650 | 150 | 180 | TO-220F | 1000 | |
31 | RSE65R165F | N | 20.4 | 650 | 145 | 165 | TO-220F | 1000 | |
32 | RSF65R130F | N | 26 | 650 | 115 | 130 | TO-220F | 1000 | |
33 | RSE70R600F | N | 7.3 | 700 | 520 | 600 | TO-220F | 1000 | |
34 | RSE70R420F | N | 11 | 700 | 365 | 420 | TO-220F | 1000 | |
35 | RSE70R360F | N | 12 | 700 | 315 | 360 | TO-220F | 1000 | |
36 | RSE80R850D | N | 7 | 800 | 740 | 850 | TO-252 | 2500 | |
37 | RS80R500F | N | 9 | 800 | 420 | 500 | TO-220F | 1000 | |
38 | RSE80R380F | N | 13 | 800 | 330 | 380 | TO-220F | 1000 | |
39 | RSE80R250F | N | 18 | 800 | 220 | 250 | TO-220F | 1000 |
Power Discrete Devices Super Junction MOSFET with Ultra-low Junction Capacitance
Product Description:
Super Junction MOSFETs, or SJ MOSTETs, are power discrete devices with an ultra small package and ultra small internal resistance. They have ultra-low junction capacitance and are ideal for high-efficiency, high-frequency applications. The Superjunction diode can also be used to reduce power consumption and improve system performance. With its high performance and reliable design, SJ MOSTETs are the perfect choice for power system designers looking for superior performance with minimal power losses.
Technical Parameters:
Attribute | Description |
---|---|
Application | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Product Name | Super Junction MOSFET/SJ MOSTET |
Type | N |
EMI Margin | Large EMI Margin |
Device Type | Power Discrete Devices |
Package | Ultra Small Package |
Internal Resistance | Ultra Small Internal Resistance |
Advantages | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
Capacitance | Ultra-low Junction Capacitance |
Applications:
REASUNOS' Super Junction Metal Oxide Field Effect Transistor (Super Junction MOSFET) has become the leading choice for applications requiring high efficiency and low losses due to its unique design. Originating from Guangdong, China, this superior diode is made with a multi-layer epitaxy process, allowing it to have excellent anti-EMI and anti-surge capabilities. This product features an ultra-low junction capacitance and an extremely low internal resistance, making it perfect for applications such as LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, new energy power equipment, etc. Moreover, the REASUNOS Super Junction MOSFET offers a large EMI margin for better performance and reliability. As such, it is suitable for many high-power applications.
When it comes to packaging, REASUNOS provides dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons to ensure the protection of the product. This Super Junction MOSFET is also highly affordable, with the price depending on the quantity. REASUNOS also offers a supply capacity of 5KK/month, with delivery time ranging from 2 to 30 days depending on the total quantity. Lastly, payment terms are 100% T/T in advance (EXW).
Support and Services:
Super Junction MOSFET products are supported by a wide range of technical services and support options, including:
- Technical support assistance for product selection, application design, and troubleshooting
- Comprehensive product documentation and literature
- Online product simulation and design tools
- Design-in support services, including sample kits and evaluation boards
- Product quality and reliability information
Packing and Shipping:
Super Junction MOSFET is packaged for shipment in a sealed and protective container. The container is designed to protect the MOSFET from any physical damage during transit. The container should always be opened carefully to prevent any potential damage to the MOSFET.
The container should also be kept away from any heat sources, and the MOSFET should not be exposed to temperatures above 150°C. Additionally, the MOSFET should be kept away from any corrosive or flammable materials.