Metal Oxide Super Junction Transistor Multifunctional For Industry

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Internal Resistance Ultra Small Internal Resistance Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities
Product Name Super Junction MOSFET/SJ MOSTET Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc
Package Ultra Small Package Capacitance Ultra-low Junction Capacitance
Device Type Power Discrete Devices Type N
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Metal Oxide Super Junction Transistor

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Super Junction Transistor Multifunctional

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Industry Metal Oxide Transistor

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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
1 RSE60R190F N 17.6 600 165 190 TO-220F 1000
2 RSE60R190S N 17.6 600 165 190 TO-263 800
3 RSE60R150F N 22 600 130 150 TO-220F 1000
4 RSF60R150F N 22 600 130 150 TO-220F 1000
5 RSF60R190F N 17.6 600 165 190 TO-220F 1000
6 RS60R130F N 30 600 110 130 TO-220F 1000
7 RS60R130W N 30 600 110 130 TO247-3 600
8 RSF60R099F N 31 600 86 99 TO-220F 1000
9 RSF60R099W N 31 600 86 99 TO247-3 600
10 RSF60R070W N 45 600 61 70 TO247-3 600
11 RSF60R041W N 70 600 35 41 TO247-3 600
12 RSF60R070F N 48 600 58 68 TO-220F 1000
13 RSF60R026W N 100 600 20 26 TO247-3 600
14 RSU4N65D N 4 650 880 1000 TO-252 2500
15 RSU7N65D N 7 650 560 650 TO-252 2500
16 RSU7N65F N 7 650 560 650 TO-220F 1000
17 RS65R600D N 7.3 650 520 600 TO-252 2500
18 RS65R600F N 7.3 650 520 600 TO-220F 1000
19 RSE65R550D N 7.6 650 480 550 TO-252 2500
20 RSU12N65F N 12 650 380 420 TO-220F 1000
21 RS65R380D N 11 650 340 380 TO-252 2500
22 RS65R380F N 11 650 340 380 TO-220F 1000
23 RS65R280D N 15 650 240 280 TO-252 2500
24 RS65R280F N 15 650 240 280 TO-220F 1000
25 RSE65R210F N 16.8 650 185 210 TO-220F 1000
26 RS65R190F N 20 650 160 190 TO-220F 1000
27 RS65R190S N 20 650 160 190 TO-263 800
28 RS65R190T N 20 650 160 190 TO-220 1000
29 RSF65R190T N 20 650 170 190 TO-220 1000
30 RSE65R180F N 22 650 150 180 TO-220F 1000
31 RSE65R165F N 20.4 650 145 165 TO-220F 1000
32 RSF65R130F N 26 650 115 130 TO-220F 1000
33 RSE70R600F N 7.3 700 520 600 TO-220F 1000
34 RSE70R420F N 11 700 365 420 TO-220F 1000
35 RSE70R360F N 12 700 315 360 TO-220F 1000
36 RSE80R850D N 7 800 740 850 TO-252 2500
37 RS80R500F N 9 800 420 500 TO-220F 1000
38 RSE80R380F N 13 800 330 380 TO-220F 1000
39 RSE80R250F N 18 800 220 250 TO-220F 1000
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No. Part No. Type ID(A) VDSS(V) RDS(ON) Typ(mΩ) RDS(ON) Max(mΩ) Package MOQ(pcs)
Product Description

Power Discrete Devices Super Junction MOSFET with Ultra-low Junction Capacitance

Product Description:

Super Junction MOSFETs, or SJ MOSTETs, are power discrete devices with an ultra small package and ultra small internal resistance. They have ultra-low junction capacitance and are ideal for high-efficiency, high-frequency applications. The Superjunction diode can also be used to reduce power consumption and improve system performance. With its high performance and reliable design, SJ MOSTETs are the perfect choice for power system designers looking for superior performance with minimal power losses.

 

Technical Parameters:

Attribute Description
Application LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc
Product Name Super Junction MOSFET/SJ MOSTET
Type N
EMI Margin Large EMI Margin
Device Type Power Discrete Devices
Package Ultra Small Package
Internal Resistance Ultra Small Internal Resistance
Advantages It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities
Capacitance Ultra-low Junction Capacitance
 

Applications:

REASUNOS' Super Junction Metal Oxide Field Effect Transistor (Super Junction MOSFET) has become the leading choice for applications requiring high efficiency and low losses due to its unique design. Originating from Guangdong, China, this superior diode is made with a multi-layer epitaxy process, allowing it to have excellent anti-EMI and anti-surge capabilities. This product features an ultra-low junction capacitance and an extremely low internal resistance, making it perfect for applications such as LED driver, PFC circuit, switching power supply, UPS of continuous power supply system, new energy power equipment, etc. Moreover, the REASUNOS Super Junction MOSFET offers a large EMI margin for better performance and reliability. As such, it is suitable for many high-power applications.

When it comes to packaging, REASUNOS provides dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons to ensure the protection of the product. This Super Junction MOSFET is also highly affordable, with the price depending on the quantity. REASUNOS also offers a supply capacity of 5KK/month, with delivery time ranging from 2 to 30 days depending on the total quantity. Lastly, payment terms are 100% T/T in advance (EXW).

 

Support and Services:

Super Junction MOSFET products are supported by a wide range of technical services and support options, including:

  • Technical support assistance for product selection, application design, and troubleshooting
  • Comprehensive product documentation and literature
  • Online product simulation and design tools
  • Design-in support services, including sample kits and evaluation boards
  • Product quality and reliability information
 

Packing and Shipping:

Super Junction MOSFET is packaged for shipment in a sealed and protective container. The container is designed to protect the MOSFET from any physical damage during transit. The container should always be opened carefully to prevent any potential damage to the MOSFET.

The container should also be kept away from any heat sources, and the MOSFET should not be exposed to temperatures above 150°C. Additionally, the MOSFET should be kept away from any corrosive or flammable materials.

 

FAQ:

Q: What is Super Junction MOSFET? A: Super Junction MOSFET is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring an advanced structure that improves its performance in power management applications.
Q: What is the brand name of Super Junction MOSFET? A: The brand name of Super Junction MOSFET is REASUNOS.
Q: Where does Super Junction MOSFET come from? A: Super Junction MOSFET is manufactured in Guangdong, China.
Q: How much does Super Junction MOSFET cost? A: The price of Super Junction MOSFET depends on the product, please confirm the price with the seller.
Q: How is Super Junction MOSFET packaged and delivered? A: Super Junction MOSFET is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days (Depends on Total Quantity) and payment terms are 100% T/T in Advance (EXW). We have a supply ability of 5KK/month.