All Products
Keywords [ high power mosfet ] match 182 Products.
PFC Circuit Super Junction MOSFET Practical Multiscene N Type
| Product Name: | Super Junction MOSFET/SJ MOSTET |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Device Type: | Power Discrete Devices |
Power Supply Super Junction MOSFET Surface Mount Multi Function
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Product Name: | Super Junction MOSFET/SJ MOSTET |
Multipurpose Super Junction MOSFET N Type 600V For LED Driver
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
|---|---|
| Package: | Ultra Small Package |
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Multifunctional Super Junction MOSFET Durable For PFC Circuit
| Product Name: | Super Junction MOSFET/SJ MOSTET |
|---|---|
| Device Type: | Power Discrete Devices |
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
Stable Multiscene Superjunction Mosfet , Anti EMI Discrete Mosfet
| EMI Margin: | Large EMI Margin |
|---|---|
| Advantages: | It Is Made By Multi-layer Epitaxy Process. Compared With Trench Process, It Has Excellent Anti EMI And Anti Surge Capabilities |
| Type: | N |
High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification
| Trench Process Application: | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
|---|---|
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
| SGT Process Advantages: | Breakthrough FOM Optimization, Covering More Application. |
Industrial Stable Super Junction Transistor , Heat Dissipation Discrete Mosfet
| EMI Margin: | Large EMI Margin |
|---|---|
| Application: | LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, New Energy Power Equipment, Etc |
| Type: | N |
Multifunctional Silicon Carbide MOSFET High Voltage For Converter
| Efficiency: | High Efficiency |
|---|---|
| Frequency: | High Frequency |
| Resistance: | Low On Resistance |
Stable Very High Voltage Transistor Multiscene Heat Dissipation
| HV Mosfet Application: | LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc |
|---|---|
| Heat Dissipation: | Great Heat Dissipation |
| Resistance: | Low On-resistance |
High Efficiency Low Power Loss Low Voltage MOSFET Trench / SGT Process
| Power Consumption: | Low Power Loss |
|---|---|
| Efficiency: | High Efficiency And Reliable |
| Trench Process Advantages: | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |