High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification

Place of Origin Guangdong, CN
Brand Name REASUNOS
Price Confirm price based on product
Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month

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Product Details
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application. SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification.
Resistance Low Rds(ON) Power Consumption Low Power Loss
Product Name Low Voltage MOSFET EAS Capability High EAS Capability
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Product Description

Product Description:

The low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage power MOSFET is specifically created to address the needs of applications where low power consumption is critical. With its low power loss feature, this MOSFET ensures that the energy is used most effectively, leading to energy savings and prolonging the life of battery-operated devices.

One of the key attributes of the low voltage MOSFET is its low on-state resistance, known as Low Rds(ON). The Rds(ON) parameter is a critical factor in determining the efficiency of the MOSFET. A lower Rds(ON) means less power is dissipated as heat when the MOSFET is conducting, which in turn translates to higher efficiency and reliability. The low gate voltage MOSFET offers an exceptionally low Rds(ON), which makes it suitable for high-efficiency power management applications.

Another significant aspect of the low voltage MOSFET is its High Energy Avalanche and Commutation Ruggedness (EAS) capability. This feature ensures that the MOSFET can handle high energy pulses without failure, providing robust performance in harsh operating conditions. High EAS Capability is particularly important in applications where the MOSFET is subject to high transient voltages, ensuring the stability and longevity of the device.

The innovative Super Junction Technology (SGT) process used in the manufacturing of low gate voltage MOSFETs is one of the major advantages that sets these devices apart. The SGT process leads to a breakthrough in the figure of merit (FOM) optimization, which is a measure of the MOSFET's performance in relation to its size and power dissipation. By optimizing the FOM, the SGT process allows for the creation of MOSFETs that offer superior performance while covering a broader range of applications.

The diverse applications of the low voltage MOSFET highlight its versatility and effectiveness. In motor driver circuits, the low voltage power MOSFET provides precise control over motor speed and direction while minimizing power loss. This makes it ideal for use in battery-powered devices, where efficiency is paramount. The 5G base station is another application where the low voltage MOSFET shines, offering the necessary speed and reliability required by next-generation wireless communication networks. Energy storage systems benefit from the MOSFET's low power consumption, contributing to more sustainable and efficient energy management.

Additionally, the low gate voltage MOSFET is perfect for high-frequency switch applications, where rapid switching is necessary without compromising performance or efficiency. Synchronous rectification is another area where the low voltage MOSFET excels, providing the ability to convert alternating current (AC) to direct current (DC) with minimal power loss, which is crucial in power supply units.

In conclusion, the low voltage MOSFET is an advanced semiconductor device that brings together low power consumption, low Rds(ON), and high EAS capability. Leveraging the SGT process advantages, it offers breakthrough FOM optimization and is capable of serving a wide array of applications, including motor drivers, 5G base stations, energy storage, high-frequency switches, and synchronous rectification. Its robust design and superior performance make the low voltage MOSFET an essential component in the quest for energy-efficient electronic solutions.


Features:

  • Product Name: Low Voltage MOSFET
  • Efficiency: High Efficiency And Reliable
  • SGT process Application: Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification
  • Resistance: Low Rds(ON) for enhanced performance
  • Trench process Advantages: Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized
  • Structure process: Trench/SGT for optimal design flexibility
  • Low Vgs MOSFET: Ideal for applications requiring low gate drive voltages
  • Low Voltage Field Effect Transistor: Ensures efficient control of power with minimal voltage requirements
  • Low RDS(on) Low Voltage Field Effect Transistor: Provides higher efficiency with reduced conduction losses

Technical Parameters:

Parameter Details
Product Name Low Voltage MOSFET
Trench Process Advantages Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized
Trench Process Application Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification
SGT Process Advantages Breakthrough FOM Optimization, Covering More Application
SGT Process Application Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification
Efficiency High Efficiency And Reliable
Resistance Low Rds(ON)
EAS Capability High EAS Capability
Structure Process Trench/SGT
Power Consumption Low Power Loss

Applications:

The REASUNOS brand is renowned for its innovative and reliable electronic components. Among its impressive lineup is the Trench Low Voltage MOSFET, which is designed to cater to a wide range of applications and scenarios. Manufactured in Guangdong, CN, these MOSFETs are engineered using the trench process, making them suitable for high-performance and power-efficient applications.

Due to their Low Rds(ON) resistance, REASUNOS Low Voltage Field Effect Transistors are ideal for scenarios that demand minimal power loss while delivering efficient performance. The high EAS capability of these MOSFETs ensures robustness, especially in applications subject to high energy pulses. This makes them exceptionally reliable in various electronic circuits, contributing to their widespread use in the industry.

When it comes to applications, the Trench Low Voltage MOSFET by REASUNOS is versatile. It is commonly used in wireless charging setups, offering efficient power management and transfer. Additionally, its application in fast-charging technology helps in achieving rapid charge times for electronic devices without sacrificing safety or efficiency. Motor drivers also benefit from these MOSFETs, as they require low voltage power MOSFETs that can handle high switching frequencies with low heat generation. Moreover, DC/DC converters leverage the low power loss feature of these transistors to maintain energy efficiency in power conversion processes.

Furthermore, the Trench Low Voltage MOSFET is an excellent choice for high-frequency switches due to its ability to operate at high speeds with low power consumption. Its application in synchronous rectification demonstrates its capability to reduce power dissipation and improve the overall efficiency of power supply systems.

The packaging details of REASUNOS MOSFETs include dustproof, waterproof, and anti-static tubular packaging, which is then placed inside a cardboard box in cartons to ensure the utmost protection during shipping. The delivery time ranges from 2 to 30 days, depending on the total quantity ordered. As for pricing, customers are advised to confirm the price based on the product they wish to purchase. Payment terms are straightforward, with 100% T/T in Advance (EXW), and the supply ability is robust, at 5KK units per month.

In summary, the REASUNOS Trench Low Voltage MOSFET is a high-quality, versatile component suitable for a broad range of power-sensitive applications. Its low resistance, high efficiency, and robust EAS capability make it a go-to choice for manufacturers and engineers looking to optimize their electronic designs for performance and reliability.


Support and Services:

Our Low Voltage MOSFET products come with comprehensive technical support and services to ensure you get the most from our semiconductors. With our expert assistance, you can expect high performance, efficiency, and reliability from your applications. Our support includes in-depth product documentation, extensive application notes, and design models to help you integrate our MOSFETs into your designs smoothly and effectively.

We also offer a suite of online tools and software that can aid in device selection, thermal simulation, and electrical performance prediction. This enables you to make informed decisions about which MOSFETs best fit your requirements and how to optimize your designs for maximum efficiency.

In addition to these resources, we provide troubleshooting assistance to help you resolve any issues that may arise during the design, testing, or deployment phases. Our team of experienced engineers is available to offer guidance and recommendations to ensure your product operates at its best.

To further support your development efforts, we organize webinars and training sessions that cover various topics related to Low Voltage MOSFET technology, including the latest trends, design techniques, and industry best practices.

We are committed to delivering the highest level of customer satisfaction through our technical support and services for Low Voltage MOSFET products. Our goal is to empower you with the knowledge and tools necessary to achieve excellence in your electronic designs.


Packing and Shipping:

The Low Voltage MOSFET product is carefully enclosed in anti-static protective packaging to ensure safe transportation and handling. Each MOSFET is individually packed to prevent electrical damage.

The product is then placed in a cushioned box specifically designed to fit the MOSFET's dimensions, providing additional protection against mechanical shock during shipping.

For larger orders, these boxes are further secured in a sturdy outer carton to prevent movement and potential impact. The outer carton is clearly labeled with handling instructions and the necessary warning signs for electronic components.

All packages are shipped with a detailed packing list and a copy of the purchase order. Tracking information is provided as soon as the shipment is dispatched, allowing for real-time monitoring of the delivery status.